Calculation of the radiation hazard at supersonic aircraft altitudes produced by an energetic solar flare, 2

Radiation hazard calculations for supersonic aircraft altitudes produced by energetic solar flare of 23 Feb. 196

50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications

We report well-scaled 50 nm GaAs metamorphic HEMTs (mHEMTs) with DC power consumption in the range 1-150 ΜW/Μ demonstrating f<sub>T</sub> of 30-400 GHz. These metrics enable the realisation of ultra-low power (<500 ΜW) radio transceivers for autonomous distributed sensor network applications

180nm metal gate, high-k dielectric, implant-free III--V MOSFETs with transconductance of over 425 μS/μm

Abstract: Data is reported from 180 nm gate length GaAs n-MOSFETs with drive current (Ids,sat) of 386 μA/μm (Vg=Vd =1.5 V), extrinsic transconductance (gm) of 426 μS/μm, gate leakage ( jg,limit) of 44 nA/cm2, and on resistance (Ron) of 1640 Ω μm. The gm and Ron metrics are the best values reported to date for III-V MOSFETs, and indicate their potential for scaling to deca-nanometre dimensions

Very high performance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies

In this paper, we review a range of nanofabrication techniques which enable the realization of uniform, high yield, high performance 50 nm T-gate III-V high electron mobility transistors (HEMTs). These technologies have been applied in the fabrication of a range of lattice matched and pseudomorphic InP HEMTs and GaAs metamorphic HEMTs with functional yields in excess of 95%, threshold voltage uniformity of 5 mV, DC transconductance of up to 1600 mS/mm and f/sub T/ of up to 480 GHz. These technologies and device demonstrators are key to enabling a wide range of millimeter-wave imaging and sensing applications beyond 100 GHz, particularly where array-based multi-channel solutions are required

Blockade of mini-TrpRS for treatment of diabetic foot syndrome

Diabetic foot syndrome demonstrates wound chronicity due to impaired tissue perfusion in lower limbs. Previous studies showed interferon-gamma (IFN-γ), a central inflammatory mediator in diabetic foot syndrome, to induce the truncated form of tryptophanyl-tRNA synthetase (mini-TrpRS) that has strong angiostatic properties. Recently we reported that mini-TrpRS signalling could be blocked in the presence of IFN-γ with D-tryptophan in vitro. Here we discuss the IFN-γ/mini-TrpRS axis in the pathology of diabetic foot syndrome and emerging therapeutic options

Plankton community composition, organic carbon and thorium-234 particle size distributions, and particle export in the Sargasso Sea

Measurements of plankton community composition (eight planktonic groups), particle size-fractionated (10, 20, 53, 70, and 100-μm Nitex screens) distributions of organic carbon (OC) and 234Th, and particle export of OC and 234Th are reported over a seasonal cycle (2006–2007) from the Bermuda Atlantic Time-Series (BATS) site. Results indicate a convergence of the particle size distributions of OC and 234Th during the winter-spring bloom period (January–March, 2007). The observed convergence of these particle size distributions is directly correlated to the depth-integrated abundance of autotrophic pico-eukaryotes (r = 0.97, P \u3c 0.05) and, to a lesser extent, Synechococcus (r = 0.85, P \u3c 0.14). In addition, there are positive correlations between the sediment trap flux of OC and 234Th at 150 m and the depth-integrated abundance of pico-eukaryotes (r = 0.94, P \u3c 0.06 for OC, and r = 0.98, P \u3c 0.05 for 234Th) and Synechococcus (r = 0.95, P \u3c 0.05 for OC, and r = 0.94, P \u3c 0.06 for 234Th). An implication of these observations and recent modeling studies (Richardson and Jackson, 2007) is that, although small in size, pico-plankton may influence large particle export from the surface waters of the subtropical Atlantic

High voltage electron microscopy and electron diffraction of pyroxenes in type B lunar samples from Apollo 11

Lunar pyroxene 10044 specimens cleaved and sectioned by diamond knife ultramicrotomy were examined by standard (75 to 100 kV) and high voltage (200 kV) electron microscopy and diffraction. Salient findings based on evaluation of 2000 plates show uniform 300 to 600 A-wide bands, probably corresponding to single crystal domains, with lattice spacings of 2. A High resolution bright and dark field images of iron-rich and magnesium-rich crystals were compared with corresponding electron diffraction patterns. Possible relations of observed structures to magnetic domains were considered

Sub-micron, Metal Gate, High-к Dielectric, Implant-free, Enhancement-mode III-V MOSFETs

The performance of 300nm, 500nm and 1μm metal gate, implant free, enhancement mode III-V MOSFETs are reported. Devices are realised using a 10nm MBE grown Ga2O3/(GaxGd1-x)2O3 high-κ (κ=20) dielectric stack grown upon a δ-doped AlGaAs/InGaAs/AlGaAs/GaAs heterostructure. Enhancement mode operation is maintained across the three reported gate lengths with a reduction in threshold voltage from 0.26 V to 0.08 V as the gate dimension is reduced from 1 μm to 300 nm. An increase in transconductance is also observed with reduced gate dimension. Maximum drain current of 420 μA/μm and extrinsic transconductance of 400 µS/µm are obtained from these devices. Gate leakage current of less than 100pA and subthreshold slope of 90 mV/decade were obtained for all gate lengths. These are believed to be the highest performance submicron enhancement mode III-V MOSFETs reported to date