Practical Issues for Atom Probe Tomography Analysis of III-Nitride Semiconductor Materials.

Various practical issues affecting atom probe tomography (APT) analysis of III-nitride semiconductors have been studied as part of an investigation using a c-plane InAlN/GaN heterostructure. Specimen preparation was undertaken using a focused ion beam microscope with a mono-isotopic Ga source. This enabled the unambiguous observation of implantation damage induced by sample preparation. In the reconstructed InAlN layer Ga implantation was demonstrated for the standard "clean-up" voltage (5 kV), but this was significantly reduced by using a lower voltage (e.g., 1 kV). The characteristics of APT data from the desorption maps to the mass spectra and measured chemical compositions were examined within the GaN buffer layer underlying the InAlN layer in both pulsed laser and pulsed voltage modes. The measured Ga content increased monotonically with increasing laser pulse energy and voltage pulse fraction within the examined ranges. The best results were obtained at very low laser energy, with the Ga content close to the expected stoichiometric value for GaN and the associated desorption map showing a clear crystallographic pole structure.F.T. would like to thank David A. Nicol for his kind help. The European Research Council has provided financial support under the European Community’s Seventh Framework Programme (FP7/2007-2013)/ERC Grant Agreement No. 279361 (MACONS).This is the author accepted manuscript. The final version is available from Cambridge University Press via http://dx.doi.org/10.1017/S143192761500042

Ungrading General Education: Preliminary Results from a Pilot Study

A group of faculty members representing more than 20 courses listed in the Eastern Kentucky University General Education curriculum participated in a pilot program to test and measure the effectiveness of “ungraded” pedagogy. “Ungrading,” as defined by the group, can be any conscious effort to move student emphasis away from grades and onto learning. Given this definition, ungrading took many forms in the pilot: gradeless classrooms, grading contracts, and greater choice of assignments by students, to name a few. At the end of the semester, quantitative and qualitative data was gathered from student course evaluations; DFW and retention rates were considered; and focus groups comprised of students in ungraded classes were convened. This piece provides preliminary results from the pilot and in an effort to begin a larger conversation about the widespread adoption of ungraded pedagogies

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour

Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

We investigate the impact of a fluorine plasma treatment used to obtain enhancement-mode operation on the structure and chemistry at the nanometer and atomic scales of an InAlN/GaN field effect transistor. The fluorine plasma treatment is successful in that enhancement mode operation is achieved with a +2.8 V threshold voltage. However, the InAlN barrier layers are observed to have been damaged by the fluorine treatment with their thickness being reduced by up to 50%. The treatment also led to oxygen incorporation within the InAlN barrier layers. Furthermore, even in the as-grown structure, Ga was unintentionally incorporated during the growth of the InAlN barrier. The impact of both the reduced barrier thickness and the incorporated Ga within the barrier on the transistor properties has been evaluated theoretically and compared to the experimentally determined two-dimensional electron gas density and threshold voltage of the transistor. For devices without fluorine treatment, the two-dimensional electron gas density is better predicted if the quaternary nature of the barrier is taken into account. For the fluorine treated device, not only the changes to the barrier layer thickness and composition, but also the fluorine doping needs to be considered to predict device performance. These studies reveal the factors influencing the performance of these specific transistor structures and highlight the strengths of the applied nanoscale characterisation techniques in revealing information relevant to device performance.</jats:p

A SANS and APT study of precipitate evolution and strengthening in a maraging steel

In this work a combination of the characterisation techniques small angle neutron scattering (SANS) and atom probe tomography (APT) are used to study the precipitation in a maraging steel. Three similar maraging steel alloys were aged at different temperatures and ageing times, and then characterised using SANS, APT and microhardness. The alloys consist of two types of precipitates, namely Laves phase and β-NiAl, the precipitates have different composition and hence precipitate ageing, which makes it complicated to model. The SANS experimental set-up was relatively simple and allowed the precipitate size and fraction of a large number of samples to be measured in a single experiment. The APT results were used for constraining the SANS modelling, particularly the composition, shape and distribution of phases. The characterisation led to the following description of precipitation: NiAl phase reaches coarsening at early stages of ageing and shifts its strength mechanisms from shearing to Orowan looping, which cause the characteristic peak strength; the Laves phase is in growth throughout and its strength contribution increases with ageing time. These observations were shown to be consistent with precipitate evolution and strengthening models, and the work of others. Although, there are some issues with the combination of SANS and APT approach, which are discussed, the methodology provides a valuable tool to understand complex precipitation behaviours

Schwinger Terms and Cohomology of Pseudodifferential Operators

We study the cohomology of the Schwinger term arising in second quantization of the class of observables belonging to the restricted general linear algebra. We prove that, for all pseudodifferential operators in 3+1 dimensions of this type, the Schwinger term is equivalent to the ``twisted'' Radul cocycle, a modified version of the Radul cocycle arising in non-commutative differential geometry. In the process we also show how the ordinary Radul cocycle for any pair of pseudodifferential operators in any dimension can be written as the phase space integral of the star commutator of their symbols projected to the appropriate asymptotic component.Comment: 19 pages, plain te