Investigation of CNTFET Performance with Gate Control Coefficient Effect

For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other hand, total capacitance decreases with high αG value resulting improved charging energy. Likewise, drain induced barrier lowering (DIBL) decreases with αG that provides less deviation from ideal device performance. Finally, subthreshold swing comes very close to the theoretical limit at high αG which is desired for low threshold voltage and low-power operation for FETs scaled down to small sizes. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/3598

Double Walled Carbon Nanotube Simulator to Achieve Higher Accuracy in Finding Optical and Electrical Properties of the Tubes

Many Software have been made to predict the optical transition energy of Single Walled Carbon Nanotube. Predicting the Radial Breathing Mode frequency for Double Walled Carbon Nanotube has been really tough due to inter tube interaction. Experimental values show clear indication that these frequencies and Transition energies depends heavily on inter tube interaction and chirality of the Nanotube. All the previous software to predict any kinds of Band structure of CNT failed to take this effects into account. Moreover most of them gives fairly accurate value for Single Walled Carbon Nanotube. Here for the first time a software was built to predict different kinds of Parameter for Double Walled Carbon Nanotube. This software can be significant in simulating Resonant Raman Spectroscopy for DWNT. The equations used to predict the Band Structure of DWNT in this software is also the most accurate one till date

Performance Study of Strain Engineered CMOS Inverter Logic Using Silicon Nanowire and Carbon Nanotube Field Effect Transistors

Various non-ballistic effects have significant impacts on the characteristics of nanoscale devices whose performance can be boosted by strain engineering. The effects of uniaxial compressive and tensile strains on Complementary Metal-Oxide-Semiconductor (CMOS) inverter circuits consisting of Silicon Nanowire Field-Effect-Transistor (SiNW-FET) and Carbon Nanotube Field-Effect-Transistor (CNT-FET) have been investigated in this paper. At first, a CMOS inverter circuit has been developed using single-walled CNT-FET and SiNW-FET. A comparative analysis of the transconductances of both types of devices along with their dependence on applied strain has been presented. Afterwards, Simmons direct tunneling effect has been observed for both strained and unstrained CNT-FETs. Simulation result signifies that strained CNT-FET inverter has lower gate leakage current than its unstrained counterpart. Finally, a comparison between the effects of strains on the velocity vs electric field characteristics for both SiNW-FET and CNT-FET has been studied. As switching delay time for a CMOS inverter circuit is related to the velocity saturation effect, a conclusion can be drawn from these curves that for SiNW-FET CMOS inverter, tensile strain increases the switching delay time whereas compressive strain decreases it for high applied field. Accordingly, for CNT-FET CMOS inverter, strain increases the switching delay time for specific chirality

Polymerization of a confined π-system : Chemical synthesis of tetrahedral amorphous carbon nanoballs from graphitic carbon nanocapsules

[[abstract]]Aziridination of graphitic carbon nanocapsules (CNCs) followed by pyrolysis at 700 °C at ambient pressure yields tetrahedral amorphous carbon nanoballs (CNBs, see Figure). Because of the pyramidal character of some of the double bonds in the derivatized CNCs, a radical chain mechanism is proposed to rationalize the transformation of C sp2 hybridization in the CNCs to C sp3 hybridization in the CNBs.[[notice]]補正完畢[[journaltype]]國外[[incitationindex]]SCI[[incitationindex]]E

Stocking density effects on growth and production of the threatened silurid catfish, Mystus cavasius (Hamilton) fingerlings in nursery ponds

The fingerling-rearing experiment of the threatened catfish, Mystus cavasius was carried out at different stocking densities in earthen nursery ponds. Twelve-day-old fry were stocked at 200 000 ha−1 in treatment-1 (T1), 250 000 ha−1 in treatment-2 (T2) and 300 000 ha−1 in treatment-3 (T3) respectively. The mean length and weight of fry at stocking was 1.24 ± 0.25 cm and 0.11 ± 0.04 g respectively. Fry in all the experimental ponds were supplemented with SABINCO nursery feed for the first 14 days and starter-I feed for days 15–56. The physico-chemical parameters and plankton population of pond water were within the suitable level for fish culture. Growth in terms of final weight, final length, weight gain, length gain and specific growth rate and survival of fingerlings were significantly higher in T1 than those in T2 and T3. Feed conversion rate was significantly lower in T1 followed by T2 and T3 in that order. Significantly higher number of fingerlings was produced in T3 than that in T2 and T1. Even then, consistently higher net benefits were obtained from T1 than those from T3 and T2. Among the treatments evaluated, 200 000 fry ha−1 was the best stocking density considering the highest growth, production and net benefits of fingerlings of M. cavasius in nursery ponds

Graphene-MoS2 spacer on metal-insulator-metal structure for enhanced surface plasmon coupled emission

In fluorescence microscopy, surface plasmon coupled emission (SPCE) has become a state-of-art technique for efficient detection of analytes at a very low concentration, where lights emitted from excited fluorophores couple to the surface plasmon mode of nearby thin metal film and result in a highly directional emission. In this work, we present the use of graphene and molybdenum disulfide (MoS2) as the spacer materials on the metal-insulator-metal structure for enhanced SPCE signal. In conventional SPCE studies a thin layer of glass acts as the spacer layer on a single silver or gold film. But the glass contributes nothing to signal enhancement. In our proposed structure, in addition to enhancing the electric field configuration on the metal surface, the spacer facilitates the participation of non-vertically oriented fluorophores in the sample in the coupling of fluorescence-plasmon, by establishing π − π interactions with the fluorescent molecules. Moreover, instead of a single metal layer, the adoption of a dielectric layer of gallium arsenide flanked by two silver films amplifies the excitation field as well as the SPCE signal. Here we report a 75-fold enhancement of signal intensity compared to isotropic fluorescence radiation at our frequency of interest, and a ∼ 2-fold amplification with respect to the peak intensity obtainable in the conventional SPCE structure. This enhancement is attributed to the very high electric field confinement of the 2D plasmonic nanostructures– graphene and MoS2

Universal empirical formula for optical transition energies of semiconducting single-walled carbon nanotubes

A general empirical relation for calculating first seven optical transition energies of semiconducting single wall carbon nanotubes (SWCNTs) is proposed here for the first time. The proposed formula effectively relates first seven optical transition energies of semiconducting SWCNTs with their chiral indices (n, m) through exponential form containing two specific terms (n+2m) and (2n-m). Both mod 1 and mod 2 types of semiconducting tubes are considered here over a wide diameter range from 0.4 nm to 4.75 nm. It was observed that the proposed empirical relations can predict the recent experimental data of those optical transitions with high accuracy

NITROGEN DOPING IN CAMPHORIC CARBON FILMS AND ITS APPLICATION TO PHOTOVOLTAIC CELL

Carbon films have been deposited on quartz and single-crystal silicon substrates by pulsed laser deposition technique. The soot for the target was obtained from burning camphor, a natural source. The effect of nitrogen (N) incorporation in camphoric carbon film is investigated. Optical gap for the undoped film is about 0.95 eV. The optical gap remains unchanged for low N content and decreases to about 0.7 eV. With higher N content, the optical gap increases. The resistivity of the carbon film increases with N content, initially and decreases with higher N content up till the film that is deposited at 30 mTorr. The results indicate successful doping for the film deposited at low nitrogen content. The J–V characteristics of N-incorporated carbon/silicon photovoltaic cells under illumination are observed to improve upon N-incorporation in the carbon layer.Camphoric carbon, pulsed laser deposition, nitrogen doping, photovoltaic cell, fill factor