61 research outputs found

    Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

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    The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3 studied

    Time-Varying Sequence Model

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    Traditional machine learning sequence models, such as RNN and LSTM, can solve sequential data problems with the use of internal memory states. However, the neuron units and weights are shared at each time step to reduce computational costs, limiting their ability to learn time-varying relationships between model inputs and outputs. In this context, this paper proposes two methods to characterize the dynamic relationships in real-world sequential data, namely, the internal time-varying sequence model (ITV model) and the external time-varying sequence model (ETV model). Our methods were designed with an automated basis expansion module to adapt internal or external parameters at each time step without requiring high computational complexity. Extensive experiments performed on synthetic and real-world data demonstrated superior prediction and classification results to conventional sequence models. Our proposed ETV model is particularly effective at handling long sequence data

    In Situ Observation of β-Ga 2

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    Demonstration of a SiC Protective Coating for Titanium Implants

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    To mitigate the corrosion of titanium implants and improve implant longevity, we investigated the capability to coat titanium implants with SiC and determined if the coating could remain intact after simulated implant placement. Titanium disks and titanium implants were coated with SiC using plasma-enhanced chemical vapor deposition (PECVD) and were examined for interface quality, chemical composition, and coating robustness. SiC-coated titanium implants were torqued into a Poly(methyl methacrylate) (PMMA) block to simulate clinical implant placement followed by energy dispersive spectroscopy to determine if the coating remained intact. After torquing, the atomic concentration of the detectable elements (silicon, carbon, oxygen, titanium, and aluminum) remained relatively unchanged, with the variation staying within the detection limits of the Energy Dispersive Spectroscopy (EDS) tool. In conclusion, plasma-enhanced chemical vapor deposited SiC was shown to conformably coat titanium implant surfaces and remain intact after torquing the coated implants into a material with a similar hardness to human bone mass

    Dual-functional thermosensitive hydrogel for reducing infection and enhancing bone regeneration in infected bone defects

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    The contamination of bone defects is a serious therapeutic problem. The treatment of infected bone defects involves rigorous infection control followed by bone reconstruction. Considering these two processes, the development of biomaterials possessing antibacterial and osteogenic properties offers a promising approach for the treatment of infected bone defects. In this study, a dual-functional, thermosensitive, and injectable hydrogel composed of chitosan (CS), quaternized CS (QCS), and nano-hydroxyapatite (nHA) was designed, and the ratio of CS to QCS in the hydrogel was optimized to enhance the antibacterial efficacy of CS while reducing the cytotoxicity of QCS. In vitro studies demonstrated that the hydrogel with an 85 %:15 % ratio of CS to QCS exhibited excellent biocompatibility and antibacterial properties while also possessing suitable mechanical characteristics and degradability. The incorporation of nHA into the hydrogel enhanced MC3T3-E1 proliferation and osteogenic differentiation. Moreover, this hydrogel demonstrated superior in vivo therapeutic effectiveness in a rabbit model of infected bone defect. In summary, this study provides a promising material design and a comprehensive one-step treatment strategy for infected bone defects

    Applicability of RANS models and pressure drop in edge subchannels for 19-pin wire-wrapped fuel bundle channel in CiADS

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    The accelerator-driven subcritical system has a strong transmutation ability and high inherent safety, and it is internationally recognized as the most promising long-life nuclear waste disposal device. This study involves the construction of a Visual Hydraulic ExperimentaL Platform (VHELP) for the purpose of evaluating the applicability of Reynolds-averaged Navier–Stokes (RANS) models and analyzing the pressure distribution within the fuel bundle channel of China initiative accelerator-driven system (CiADS). Measurements of thirty differential pressures in edge subchannels within a 19-pin wire-wrapped fuel bundle channel were obtained under different conditions using deionized water. The pressure distribution in the fuel bundle channel at Reynolds numbers of 5000, 7500, 10,000, 12,500, and 15,000 was simulated using Fluent. The results show that RANS models obtained accurate results, and the shear stress transport k-ω model provided the most accurate prediction of the pressure distribution. The difference between the results of the Shear stress transport (SST) k-ω model and experimental data was the smallest, and the maximum difference was ±5.57%. Moreover, the error between the experimental data and numerical results of the axial differential pressure was smaller than that of the transverse differential pressure. The pressure periodicity in axial and transverse directions (one pitch) and a relatively three-dimensional pressure measurements were studied. The static pressure fluctuated and decreased periodically as the z-axis coordinate increased. These results can facilitate research on the cross-flow characteristics of liquid metal-cooled fast reactors

    Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

    No full text
    The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3 studied

    Annealing Effects on the Band Alignment of ALD SiO2 on (Inx Ga1−x )2 O3 for x = 0.25–0.74

    No full text
    The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determine the thermal stability of MOS structures in high-temperature applications. At all indium concentrations studied, the valence band offsets (VBO) showed a nearly constant decrease as a result of 450 °C annealing. The decrease in VBO was −0.35 eV for (In0.25Ga 0.75) 2 O 3 , −0.45 eV for (In0.42Ga 0.58) 2 O 3 , −0.40 eV for (In0.60Ga 0.40) 2 O 3 , and −0.35 eV (In0.74 Ga0.26) 2 O 3 for 450 °C annealing. After annealing at 600 °C, the band alignment remained stable, with <0.1 eV changes for all structures examined, compared to the offsets after the 450 °C anneal. The band offset shifts after annealing are likely due to changes in bonding at the heterointerface. Even after annealing up to 600 °C, the band alignment remains type I (nested gap) for all indium compositions of (In x Ga1−x ) 2 O 3 studied
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