Heterojunction solar cell calculations

Solar cell efficiencies computed for semiconductor heterojunction cell

Studies of heteroface solar cell performance

The development, fabrication, and failure modes of AlxGa(1-x)As-GaAs heteroface solar cells are described. Crystal growth, the diffusion of Zn into the GaAs layer to form the p-n junction, SEM studies of the diffusion length of GaAs, and procedures for making ohmic contacts are discussed

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Semiannual progress report, period ending 30 Sep. 1968

Gain, frequency and temperature dependence in heterojunction transistors of GaAs, ZnSe, and G

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge

Experimentals characteristics of semiconductor heterojunction pairs ZnS/GaP and ZnSe/Ga

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge, 1 May - 31 July 1970

Fabrication problems and device characteristics of ZnSe-GaAs and Ge-GaAs heterojunction

Study of semiconductor heterojunctions of zinc selenide, gallium arsenide, and germanium

Fabrication and properties of gallium arsenide and zinc selenide junctions with germanium, and of gallium arsenide-zinc selenide heterojunction

The Rwandan Genocide: A study for policymakers engaged in foreign policy, diplomacy, and international development

Over a period of 100 days between April and mid-July of 1994, the Rwandan genocide claimed the lives of approximately 800,000 Rwandans and caused the displacement of an estimated two million refugees into surrounding nations (UNHCR). The eruption of fear, brutality, and violence as Rwandans massacred Rwandans stemmed from decades of civil war fueled by intractable existential, political, and socioeconomic conflicts between Tutsis and Hutus. After the genocide ended and the United Nations’ investigative task force began sifting through brutally macheted bodies in churches, stadiums, rivers and roadsides, the international community and policymakers began to ask what they could or should have done differently in international diplomacy to accurately assess the situation and prudentially intervene to prevent the genocide. In addition, Rwanda and the international community began to ask what justice meant for the survivors. The questions are still relevant today. Despite steps taken toward reconstruction, the wounds and scars in Rwanda remain. For foreign policymakers and practitioners engaged in diplomatic mediation or international development, Rwanda serves as a sobering case study. This paper examines the response of the international community in 1994, and analyzes when, if ever, an intractable conflict is ripe for an apology (Crocker, Hampson, & Aall). For Tutsi and Hutu survivors, an apology will not restore the nearly 800,000 lives lost, undo the years in exile, or erase the trauma suffered; the task of rebuilding the nation is, therefore, a weighty one in navigating policy and the day-to-day reality of those seeking healing and restoration. This paper also examines what commitments or enforcement mechanisms must accompany an apology within the context of culture in order for reform to be sustainable in environments where violent conflict involved ethnic tensions, political interests, and socioeconomic challenges

A position- and time-sensitive photon-counting detector with delay-line read-out

We have developed image intensifier tubes with delay-anode read-out for time- and position-sensitive photon counting. The timing precision is better than 1 ns with 1000x1000 pixels position resolution and up to one megacounts/s processing rate. Large format detectors of 40 and 75 mm active diameter with internal helical-wire delay-line anodes have been produced and specified. A different type of 40 and 25 mm tubes with semi-conducting screen for image charge read-out allow for an economic and robust tube design and for placing the read-out anodes outside the sealed housing. Two types of external delay-line anodes, i.e. pick-up electrodes for the image charge, have been tested. We present tests of the detector and anode performance. Due to the low background this technique is well suited for applications with very low light intensity and especially if a precise time tagging for each photon is required. As an example we present the application of scintillator read-out in time-of-flight (TOF) neutron radiography. Further applications so far are Fluorescence Life-time Microscopy (FLIM) and AstronomyComment: Proceedings of SPIE Conference "Optics and Optoelectronics", 16 - 19. Apr.200

Study of semiconductor heterojunctions of ZnSe, GaAs and Ge Quarterly report, 1 Aug. - 31 Oct. 1969

Semiconductor heterojunctions of zinc selenides, gallium arsenides, and germaniu