2,726 research outputs found

    Experimental investigation of the Landau-Pomeranchuk-Migdal effect in low-Z targets

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    In the CERN NA63 collaboration we have addressed the question of the potential inadequacy of the commonly used Migdal formulation of the Landau-Pomeranchuk-Migdal (LPM) effect by measuring the photon emission by 20 and 178 GeV electrons in the range 100 MeV - 4 GeV, in targets of LowDensityPolyEthylene (LDPE), C, Al, Ti, Fe, Cu, Mo and, as a reference target, Ta. For each target and energy, a comparison between simulated values based on the LPM suppression of incoherent bremsstrahlung is shown, taking multi-photon effects into account. For these targets and energies, we find that Migdal's theoretical formulation is adequate to a precision of better than about 5%, irrespective of the target substance.Comment: 8 pages, 13 figure

    Source control options for reducing emission of priority pollutants from urban areas.

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    The overall aim of the ScorePP project is to develop comprehensive and appropriate source control strategies that authorities, cities, water utilities and the chemical industry can employ to reduce emissions of priority pollutants (PPs) from urban areas into the receiving water environment. Focus is on the 33 priority and priority hazardous substances and substance groups identified in the European Water Framework Directive. However, this list may be expanded to include emerging pollutants or reduced if appropriate model compounds can be identified. The initial work focuses on 67 substances, including substances identified in the proposed European environmental quality standard (EQS) directive as well as the defined example compounds and several organometallic derivatives. Information on inherent properties, environmental presence and fate, and legislative issues is made available in open database format, and a data management system combining chemical identification (CAS#), NACE economic activity classifications and NOSE-P emission source classifications has been developed as a basis for spatial characterisation of PP sources using GIS. Further work will focus on dynamic urban scale source-flux models, identifying emission patterns and optimising monitoring programmes in case studies and multi-criteria comparison of source control versus end-of-pipe mitigation options in relation to their economic, social and environmental impacts

    High real-space resolution measurement of the local structure of Ga_1-xIn_xAs using x-ray diffraction

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    High real-space resolution atomic pair distribution functions (PDF)s from the alloy series Ga_1-xIn_xAs have been obtained using high-energy x-ray diffraction. The first peak in the PDF is resolved as a doublet due to the presence of two nearest neighbor bond lengths, Ga-As and In-As, as previously observed using XAFS. The widths of nearest, and higher, neighbor pairs are analyzed by separating the strain broadening from the thermal motion. The strain broadening is five times larger for distant atomic neighbors as compared to nearest neighbors. The results are in agreement with model calculations.Comment: 4 pages, 5 figure

    BAs and boride III-V alloys

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    Boron arsenide, the typically-ignored member of the III-V arsenide series BAs-AlAs-GaAs-InAs is found to resemble silicon electronically: its Gamma conduction band minimum is p-like (Gamma_15), not s-like (Gamma_1c), it has an X_1c-like indirect band gap, and its bond charge is distributed almost equally on the two atoms in the unit cell, exhibiting nearly perfect covalency. The reasons for these are tracked down to the anomalously low atomic p orbital energy in the boron and to the unusually strong s-s repulsion in BAs relative to most other III-V compounds. We find unexpected valence band offsets of BAs with respect to GaAs and AlAs. The valence band maximum (VBM) of BAs is significantly higher than that of AlAs, despite the much smaller bond length of BAs, and the VBM of GaAs is only slightly higher than in BAs. These effects result from the unusually strong mixing of the cation and anion states at the VBM. For the BAs-GaAs alloys, we find (i) a relatively small (~3.5 eV) and composition-independent band gap bowing. This means that while addition of small amounts of nitrogen to GaAs lowers the gap, addition of small amounts of boron to GaAs raises the gap (ii) boron ``semi-localized'' states in the conduction band (similar to those in GaN-GaAs alloys), and (iii) bulk mixing enthalpies which are smaller than in GaN-GaAs alloys. The unique features of boride III-V alloys offer new opportunities in band gap engineering.Comment: 18 pages, 14 figures, 6 tables, 61 references. Accepted for publication in Phys. Rev. B. Scheduled to appear Oct. 15 200

    Theoretical investigation of carbon defects and diffusion in α-quartz

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    The geometries, formation energies, and diffusion barriers of carbon point defects in silica (α-quartz) have been calculated using a charge-self-consistent density-functional based nonorthogonal tight-binding method. It is found that bonded interstitial carbon configurations have significantly lower formation energies (on the order of 5 eV) than substitutionals. The activation energy of atomic C diffusion via trapping and detrapping in interstitial positions is about 2.7 eV. Extraction of a CO molecule requires an activation energy <3.1 eV but the CO molecule can diffuse with an activation energy <0.4 eV. Retrapping in oxygen vacancies is hindered—unlike for O2—by a barrier of about 2 eV
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