Quality of life as the basis for achieving social welfare of the population

The paper discusses the concept and features of life quality as a socio-economic category. The main signs of quality of life of the population are shown. The analysis of different methodologies to measure indicators of life quality is given. It is shown that the most authoritative measure of the quality of life in the world is the “Human Development Index” (HDI). The main task of authorities at different levels to improve the quality of life of the population is described

Discrimination problems of retirement age employees

It is shown that there is an increasing number of people of retirement age; however, they fac

Creating Digital Coastal Watersheds: The Remote Data Acquisition Network at Bannockburn Plantation, Georgetown County, SC

2008 S.C. Water Resources Conference - Addressing Water Challenges Facing the State and Regio

Excitons in type-II quantum dots: Finite offsets

Quantum size effects for an exciton attached to a spherical quantum dot are calculated by a variational approach. The band line-ups are assumed to be type-II with finite offsets. The dependence of the exciton binding energy upon the dot radius and the offsets is studied for different sets of electron and hole effective masses

Relation Between the Thickness of Stellar Disks and the Relative Mass of Dark Halo in Galaxies

We consider a thickness of stellar disks of late-type galaxies by analyzing the R and K_s band photometric profiles for two independent samples of edge-on galaxies. The main goal is to verify a hypotesis that a thickness of old stellar disks is related to the relative masses of the spherical and disk components of galaxies. We confirm that the radial-to-vertical scale length ratio for galactic disks increases (the disks become thinner) with the increasing of total mass-to-light ratio of the galaxies, which characterize the contribution of dark halo to the total mass, and with the decreasing of central deprojected disk brightness (surface density). Our results are in good agreement with numerical models of collisionless disks evolved from subcritical velocity dispersion state to a marginally stable equilibrium state. This suggests that in most galaxies the vertical stellar velocity dispersion, which determine the equilibrium disk thickness, is close to the minimum value, that ensures disk stability. The thinnest edge-on disks appear to be low brightness galaxies (after deprojection) in which a dark halo mass far exceeds a mass of the stellar disk.Comment: 13 pages. To be Published in Astronomy Letters, v.28(2002

Application of scanning probe microscopy methods to control the synthesis technology of multilayer structures with Bi-substituted iron garnets

Authors present the synthesis technology in which a lower surface roughness of the layers in multilayer structure with Bi-substituted iron garnets can be achieved through simultaneous crystallization annealing of the bottom Bi-substituted iron garnet layer and the top layer of SiO2.The authors acknowledge support by the RF Ministry of Education and Science (project no.3.7126.2017)

Ultrathin compound semiconductor on insulator layers for high performance nanoscale transistors

Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. In particular, compound semiconductors heterogeneously integrated on Si substrates have been actively studied, combining the high mobility of III-V semiconductors and the well-established, low cost processing of Si technology. This integration, however, presents significant challenges. Conventionally, heteroepitaxial growth of complex multilayers on Si has been explored. Besides complexity, high defect densities and junction leakage currents present limitations in the approach. Motivated by this challenge, here we utilize an epitaxial transfer method for the integration of ultrathin layers of single-crystalline InAs on Si/SiO2 substrates. As a parallel to silicon-on-insulator (SOI) technology14,we use the abbreviation "XOI" to represent our compound semiconductor-on-insulator platform. Through experiments and simulation, the electrical properties of InAs XOI transistors are explored, elucidating the critical role of quantum confinement in the transport properties of ultrathin XOI layers. Importantly, a high quality InAs/dielectric interface is obtained by the use of a novel thermally grown interfacial InAsOx layer (~1 nm thick). The fabricated FETs exhibit an impressive peak transconductance of ~1.6 mS/{\mu}m at VDS=0.5V with ON/OFF current ratio of greater than 10,000 and a subthreshold swing of 107-150 mV/decade for a channel length of ~0.5 {\mu}m

The crystal growth and properties of novel magnetic double molybdate RbFe5_{5}(MoO4_{4})7_{7} with mixed Fe3+^{3+}/Fe2+^{2+}states and 1D negative thermal expansion

Single crystals of new compound RbFe$_5$(MoO$_4$)$_7$ were successfully grown by the flux method, and their crystal structure was determined using the X-ray single-crystal diffraction technique. The XRD analysis showed that the compound crystallizes in the monoclinic space group P21/m, with unit cell parameters a = 6.8987(4), b = 21.2912(12) and c = 8.6833(5) Å, β = 102.1896(18)°, V = 1246.66(12) Å$^3$, Z (molecule number in the unit cell) = 2, R-factor (reliability factor) = 0.0166, and T = 293(2) K. Raman spectra were collected on the single crystal to show the local symmetry of MoO$_4$ tetrahedra, after the confirmation of crystal composition using energy dispersive X-ray spectroscopy (EDS). The polycrystalline samples were synthesized by a solid-state reaction in the Ar atmosphere; the particle size and thermal stability were investigated by scanning electron microscopy (SEM) and differential scanning calorimetry (DSC) analyses. The compound decomposes above 1073 K in an Ar atmosphere with the formation of Fe(III) molybdate. The thermal expansion coefficient along the c direction has the value α = −1.3 ppm K$^{−1}$ over the temperature range of 298–473 K. Magnetic measurements revealed two maxima in the magnetization below 20 K, and paramagnetic behavior above 50 K with the calculated paramagnetic moment of 12.7 μB per formula unit is in good agreement with the presence of $_3$Fe$^{3+}$ and $_2$Fe$^{3+}$ in the high-spin (HS) state. The electronic structure of RbFe5(MoO4)7 is comparatively evaluated using X-ray photoelectron spectroscopy (XPS) and density functional theory (DFT) calculations

Genome sequence of the Trifolium rueppellianum -nodulating Rhizobium leguminosarum bv. trifolii strain WSM2012

Rhizobium leguminosarum bv. trifolii WSM2012 (syn. MAR1468) is an aerobic, motile, Gram-negative, non-spore-forming rod that was isolated from an ineffective root nodule recovered from the roots of the annual clover Trifolium rueppellianum Fresen. growing in Ethiopia. WSM2012 has a narrow, specialized host range for N2-fixation. Here we describe the features of R. leguminosarum bv. trifolii strain WSM2012, together with genome sequence information and annotation. The 7,180,565 bp high-quality-draft genome is arranged into 6 scaffolds of 68 contigs, contains 7,080 protein-coding genes and 86 RNA-only encoding genes, and is one of 20 rhizobial genomes sequenced as part of the DOE Joint Genome Institute 2010 Community Sequencing Progra