Inducing Panchromatic Absorption and Photoconductivity in Polycrystalline Molecular 1D Lead-Iodide Perovskites through π-Stacked Viologens

As a consequence of their quantum- and electronically-confined inorganic lattices, molecular 1D lead-iodide perovskites are ill suited to photovoltaic (PV) applications. In order to circumvent these problems, we utilized electron accepting viologen (N,N'-dialkyl-4,4'-bipyridinium) dications incorporating hydrogen bond donor functionalities, which served to induce π-π stacking interactions. The resulting 'viologen dimers' display enhanced charge-transfer (CT) interactions with the 1D lead-iodide nanowires. This manifests in extended light absorption (up to 800 nm), reduced band gaps (1.74 eV to 1.77 eV), and longer photoluminescence lifetimes. More importantly, we demonstrate significant photoconductivity behavior in polycrystalline molecular 1D lead-iodide perovskites for the first time. Thus, this work offers a strategy for inducing the properties required for PV applications in molecular 1D lead-iodide perovskites. © 2018 American Chemical Society

Intraperitoneal drain placement and outcomes after elective colorectal surgery: international matched, prospective, cohort study

Despite current guidelines, intraperitoneal drain placement after elective colorectal surgery remains widespread. Drains were not associated with earlier detection of intraperitoneal collections, but were associated with prolonged hospital stay and increased risk of surgical-site infections.Background Many surgeons routinely place intraperitoneal drains after elective colorectal surgery. However, enhanced recovery after surgery guidelines recommend against their routine use owing to a lack of clear clinical benefit. This study aimed to describe international variation in intraperitoneal drain placement and the safety of this practice. Methods COMPASS (COMPlicAted intra-abdominal collectionS after colorectal Surgery) was a prospective, international, cohort study which enrolled consecutive adults undergoing elective colorectal surgery (February to March 2020). The primary outcome was the rate of intraperitoneal drain placement. Secondary outcomes included: rate and time to diagnosis of postoperative intraperitoneal collections; rate of surgical site infections (SSIs); time to discharge; and 30-day major postoperative complications (Clavien-Dindo grade at least III). After propensity score matching, multivariable logistic regression and Cox proportional hazards regression were used to estimate the independent association of the secondary outcomes with drain placement. Results Overall, 1805 patients from 22 countries were included (798 women, 44.2 per cent; median age 67.0 years). The drain insertion rate was 51.9 per cent (937 patients). After matching, drains were not associated with reduced rates (odds ratio (OR) 1.33, 95 per cent c.i. 0.79 to 2.23; P = 0.287) or earlier detection (hazard ratio (HR) 0.87, 0.33 to 2.31; P = 0.780) of collections. Although not associated with worse major postoperative complications (OR 1.09, 0.68 to 1.75; P = 0.709), drains were associated with delayed hospital discharge (HR 0.58, 0.52 to 0.66; P < 0.001) and an increased risk of SSIs (OR 2.47, 1.50 to 4.05; P < 0.001). Conclusion Intraperitoneal drain placement after elective colorectal surgery is not associated with earlier detection of postoperative collections, but prolongs hospital stay and increases SSI risk

Investigation of turn-on voltage shift in organic ferroelectric transistor with high polarity gate dielectric

Large positive shifts of turn-on voltage Vto were observed in ferroelectric organic thin film transistor using P(VDF-TrFE) copolymer (57–43 mol%) as gate insulator during OFF to ON state sweeping. The shift of the transfer characteristic up to +25 V is attributed to the accumulation of mobile charge carriers (holes) in pentacene layer even during the device OFF state. The observed phenomena were first discussed on the basis of a negative surface potential created by the dipole field of a polar dielectric and trap states in an organic semiconductor layer. It was however found that these were unable to fully address the observed strong Vto shift due to the presence of large polarization in the P(VDF-TrFE) layer. A mechanism of negative polarization-compensating charges which are injected to the insulator region next to the semiconductor layer was proposed and examined to understand the phenomenon. The turn-on voltage is found to change with different magnitude of positive voltage pulses, and corresponds to different amount of charges injected for compensation. Time measurement of drain current shows a transient decaying behavior when gate bias is switched from positive to negative polarity which confirms the trapping of negative charges in the insulator

Development of exhaled breath assay devices using functionalized quartz sensors

10.1109/ICSENST.2008.4757081Proceedings of the 3rd International Conference on Sensing Technology, ICST 200894-9

Top down scale-up of semiconducting nanostructures for large area electronics

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme. © 2014 IEEE

Enhanced organic ferroelectric field effect transistor characteristics with strained poly(vinylidene fluoride-trifluoroethylene) dielectric

Poly(vinylidene fluoride-trifluoroethylene) (70–30 mol%) was used as the functional dielectric layer in organic ferroelectric field effect transistors (FeFET) for non-volatile memory applications. Thin P(VDF-TrFE) film samples spin-coated on metallized plastic substrates were stretch-annealed to attain a topographically flat-grain structure and greatly reduce the surface roughness and current leakage of semi-crystalline copolymer film, while enhancing the preferred β-phase of the ferroelectric films. Resultant ferroelectric properties (PR = |10| μC/cm2, EC = |50| MV/m) for samples simultaneously stretched (50–70% strain) and heated below the Curie transition (70 oC) were comparable to those resulting from high temperature annealing (>140 oC). The observed enhancements by heating and stretching were studied by vibration spectroscopy and showed mutual complementary effects of both processes. Organic FeFET fabricated by thermal evaporating pentacene on the smooth P(VDF-TrFE) films showed substantial improvement of semiconductor grain growth and enhanced electrical characteristics with promising non-volatile memory functionality

Metallization and dielectric reliability in Cu interconnects: Effect of cap layers and surface treatments

Advanced Metallization Conference (AMC)179-188MRSP

Adsorption of an emerging contaminant (primidone) onto activated carbon: kinetic, equilibrium, thermodynamic, and optimization studies

The current study addresses the removal of an emerging environmental contaminant (primidone) in batch adsorption experiments using commercial-grade powdered activated charcoal (PAC). The experiments for the removal of primidone were performed to identify the effect of various adsorption parameters. The secondorder rate expression best represented the adsorption kinetics data. The Freundlich isotherm equation was best fitted to the experimental adsorption data at equilibriumfor removal of primidone using PAC. The values for change in entropy (ΔSo) were positive, which indicates that the degree of freedomof the process increases. The negative values of change in enthalpy (ΔHo) and change in Gibb’s free energy (ΔGo) indicate that the physical adsorption is a dominant phenomenon, and the process is feasible and spontaneous. The negative value of ΔHo also represented the exothermicity of the adsorption process. The Taguchi optimization technique calculated the influence of variation of different process parameters, viz., initial pH (pH0), PAC dosage (m), initial adsorbate concentration (C0), solution temperature (T), and process contact time (t), on the removal of primidone by adsorption from aqueous solution. Each of the above parameters was examined at three levels to study their effects on the adsorptive uptake of primidone using PAC (qe, mg g−1), and the optimum value necessary to maximize qe was determined. The findings from the ANOVA indicate that the PAC dose (m) is the most notable parameter contributing 62.16% to qe and a 71.96% to the signal to noise (S/N) ratio data, respectively. The confirmation experiments performed at the optimum parameter condition validated the applicability of the Taguchi design of experiments. The percent removal and adsorptive uptake at the optimal condition were 86.11% and 0.258 mg g−1, respectively

A model for understanding electromigration-induced void evolution in dual-inlaid Cu interconnect structures

Electromigration-induced void evolution in various dual-inlaid copper (Cu) interconnect structures was simulated by applying a phenomenological model assisted by Monte Carlo-based simulations, considering the redistribution of heterogeneously nucleated voids and/or pre-existing vacancy clusters at the Cu/dielectric cap interface during electromigration. The results indicate that this model can qualitatively explain the electromigration-induced void evolution observed during experimental in situ secondary-electron microscopy (SEM) investigations as well as in various other reported studies. The electromigration mechanism in Cu interconnect structures and differences in the peculiar electromigration-induced void evolution in various dual-inlaid Cu interconnect structures can be clearly understood based on this model. These findings warrant reinvestigation of technologically important electromigration mechanisms by developing rigorous models based on similar concepts