45 research outputs found
CERN
As a team, we decided to elaborate on the CERN center for scientific research. We are going to refer to topics such as; the history of the institute, the countries that have participated in the foundation of CERN, the main projects that take place there and lastly the contribution of our country, Greece, in the scientific research taking place there.
Strain evolution in GaN Nanowires: from free-surface objects to coalesced templates
Top-down fabricated GaN nanowires, 250 nm in diameter and with various
heights, have been used to experimentally determine the evolution of strain
along the vertical direction of 1-dimensional objects. X-ray diffraction and
photoluminescence techniques have been used to obtain the strain profile inside
the nanowires from their base to their top facet for both initial compressive
and tensile strains. The relaxation behaviors derived from optical and
structural characterizations perfectly match the numerical results of
calculations based on a continuous media approach. By monitoring the elastic
relaxation enabled by the lateral free-surfaces, the height from which the
nanowires can be considered strain-free has been estimated. Based on this
result, NWs sufficiently high to be strain-free have been coalesced to form a
continuous GaN layer. X-ray diffraction, photoluminescence and
cathodoluminescence clearly show that despite the initial strain-free nanowires
template, the final GaN layer is strained
Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime
In order to achieve polariton lasing at room temperature, a new fabrication
methodology for planar microcavities is proposed: a ZnO-based microcavity in
which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and
in which two dielectric mirrors are used. This approach allows as to
simultaneously obtain a high-quality active layer together with a high photonic
confinement as demonstrated through macro-, and micro-photoluminescence
({\mu}-PL) and reflectivity experiments. A quality factor of 675 and a maximum
PL emission at k=0 are evidenced thanks to {\mu}-PL, revealing an efficient
polaritonic relaxation even at low excitation power.Comment: 12 pages, 3 figure
LO-phonon assisted polariton lasing in a ZnO based microcavity
Polariton relaxation mechanisms are analysed experimentally and theoretically
in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the
energy difference between the exciton reservoir and the bottom of the lower
polariton branch is resonant with the LO phonon energy. Tuning off this
resonance increases the threshold, and exciton-exciton scattering processes
become involved in the polariton relaxation. These observations are
qualitatively reproduced by simulations based on the numerical solution of the
semi-classical Boltzmann equations
Polarization dependence study of electroluminescence and absorption from InAs / GaAs columnar quantum dots
Semiconductor optical amplifiers based on InGaAs columnar quantum dots (CQDs) with different numbers of superlattice periods were fabricated and tested. The polarization dependence of the electroluminescence(EL) and absorption of such CQDs structures were measured. Compared to standard QDs a large improvement in the ratio of transverse-magnetic (TM) and -electric (TE) integrated EL was obtained in CQDs, depending on the number of stacked GaAs / InAs superlattice periods, which can be attributed to the more symmetric shape of CQDs. TM and TE resolved photovoltage absorption spectroscopy confirmed this improvement. A small spectral separation between TE- and TM-EL peaks has been observed showing that heavy and light holelike states are energetically close in these QDs
Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities
Microcavities based on group-III nitride material offer a notable platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Disk or tube geometries in particular are attractive for low-threshold lasing applications due to their ability to support high finesse whispering gallery modes (WGMs) and small modal volumes. In this article we present the fabrication of homogenous and dense arrays of axial InGaN/GaN nanotubes via a combination of displacement Talbot lithography (DTL) for patterning and inductively coupled plasma top-down dry-etching. Optical characterization highlights the homogeneous emission from nanotube structures. Power-dependent continuous excitation reveals a non-uniform light distribution within a single nanotube, with vertical confinement between the bottom and top facets, and radial confinement within the active region. Finite-difference time-domain simulations, taking into account the particular shape of the outer diameter, indicate that the cavity mode of a single nanotube has a mixed WGM-vertical Fabry-Perot mode (FPM) nature. Additional simulations demonstrate that the improvement of the shape symmetry and dimensions primarily influence the Q-factor of the WGMs whereas the position of the active region impacts the coupling efficiency with one or a family of vertical FPMs. These results show that regular arrays of axial InGaN/GaN nanotubes can be achieved via a low-cost, fast and large-scale process based on DTL and top-down etching. These techniques open a new perspective for cost effective fabrication of nano-LED and nano-laser structures along with bio-chemical sensing applications