Designing III-V Multijunction Solar Cells on Silicon

Single junction Si solar cells dominate photovoltaics but are close to their efficiency limits. This paper presents ideal limiting efficiencies for tandem and triple junction multijunction solar cells subject only to the constraint of the Si bandgap and therefore recommending optimum cell structures departing from the single junction ideal. The use of III-V materials is considered, using a novel growth method capable of yielding low defect density III-V layers on Si. In order to evaluate the real potential of these proposed multijunction designs, a quantitative model is presented, the strength of which is the joint modelling of external quantum efficiency and current-voltage characteristics using the same parameters. The method yields a single parameter fit in terms of the Shockley-Read-Hall lifetime. This model is validated by fitting experimental data of external quantum efficiency, dark current, and conversion efficiency of world record tandem and triple junction cells under terrestrial solar spectra without concentration. We apply this quantitative model to the design of tandem and triple junction solar cells, yielding cell designs capable of reaching efficiencies without concentration of 32% for the best tandem cell and 36% for the best triple junction cell. This demonstrates that efficiencies within a few percent of world records are realistically achievable without the use of concentrating optics, with growth methods being developed for multijunction cells combining III-V and Si materials.Comment: Preprint of the paper submitted to the journal Progress in Photovoltaics, selected by the Executive Committee of the 28th EU PVSEC 2013 for submission to Progress in Photovoltaics. 10 pages, 7 figure

Multiscale approaches to high efficiency photovoltaics

While renewable energies are achieving parity around the globe, efforts to reach higher solar cell efficiencies becomes ever more difficult as they approach the limiting efficiency. The so-called third generation concepts attempt to break this limit through a combination of novel physical processes and new materials and concepts in organic and inorganic systems. Some examples of semi-empirical modelling in the field are reviewed, in particular for multispectral solar cells on silicon (french ANR project MULTISOLSI). Their achievements are outlined, and the limits of these approaches shown. This introduces the main topic of this contribution, which is the use of multiscale experimental and theoretical techniques to go beyond the semi-empirical understanding of these systems. This approach has already led to great advances at modelling which have led to modelling software which is widely known. Yet a survey of the topic reveals a fragmentation of efforts across disciplines, firstly, such as organic and inorganic fields, but also between the high efficiency concepts such as hot carrier cells and intermediate band concepts. We show how this obstacle to the resolution of practical research obstacles may be lifted by inter-disciplinary cooperation across length scales, and across experimental and theoretical fields, and finally across materials systems. We present a European COST Action MultiscaleSolar kicking off in early 2015 which brings together experimental and theoretical partners in order to develop multiscale research in organic and inorganic materials. The goal of this defragmentation and interdisciplinary collaboration is to develop understanding across length scales which will enable the full potential of third generation concepts to be evaluated in practise, for societal and industrial applications.Comment: Draft paper accompanying a plenary presentation to the World Renewable Energy Conference WREC 2015, June 2015, Bucharest. In press (IOP

Validation and data characteristics of methane and nitrous oxide profiles observed by MIPAS and processed with Version 4.61 algorithm

The ENVISAT validation programme for the atmospheric instruments MIPAS, SCIAMACHY and GOMOS is based on a number of balloon-borne, aircraft, satellite and ground-based correlative measurements. In particular the activities of validation scientists were coordinated by ESA within the ENVISAT Stratospheric Aircraft and Balloon Campaign or ESABC. As part of a series of similar papers on other species [this issue] and in parallel to the contribution of the individual validation teams, the present paper provides a synthesis of comparisons performed between MIPAS CH4 and N2O profiles produced by the current ESA operational software (Instrument Processing Facility version 4.61 or IPF v4.61, full resolution MIPAS data covering the period 9 July 2002 to 26 March 2004) and correlative measurements obtained from balloon and aircraft experiments as well as from satellite sensors or from ground-based instruments. In the middle stratosphere, no significant bias is observed between MIPAS and correlative measurements, and MIPAS is providing a very consistent and global picture of the distribution of CH4 and N2O in this region. In average, the MIPAS CH4 values show a small positive bias in the lower stratosphere of about 5%. A similar situation is observed for N2O with a positive bias of 4%. In the lower stratosphere/upper troposphere (UT/LS) the individual used MIPAS data version 4.61 still exhibits some unphysical oscillations in individual CH4 and N2O profiles caused by the processing algorithm (with almost no regularization). Taking these problems into account, the MIPAS CH4 and N2O profiles are behaving as expected from the internal error estimation of IPF v4.61 and the estimated errors of the correlative measurements

Validation of MIPAS HNO3 operational data

Nitric acid (HNO3) is one of the key products that are operationally retrieved by the European Space Agency (ESA) from the emission spectra measured by the Michelson Interferometer for Passive Atmospheric Sounding (MIPAS) onboard ENVISAT. The product version 4.61/4.62 for the observation period between July 2002 and March 2004 is validated by comparisons with a number of independent observations from ground-based stations, aircraft/balloon campaigns, and satellites. Individual HNO3 profiles of the ESA MIPAS level-2 product show good agreement with those of MIPAS-B and MIPAS-STR (the balloon and aircraft version of MIPAS, respectively), and the balloon-borne infrared spectrometers MkIV and SPIRALE, mostly matching the reference data within the combined instrument error bars. In most cases differences between the correlative measurement pairs are less than 1 ppbv (5-10%) throughout the entire altitude range up to about 38 km (similar to 6 hPa), and below 0.5 ppbv (15-20% or more) above 30 km (similar to 17 hPa). However, differences up to 4 ppbv compared to MkIV have been found at high latitudes in December 2002 in the presence of polar stratospheric clouds. The degree of consistency is further largely affected by the temporal and spatial coincidence, and differences of 2 ppbv may be observed between 22 and 26 km (similar to 50 and 30 hPa) at high latitudes near the vortex boundary, due to large horizontal inhomogeneity of HNO3. Similar features are also observed in the mean differences of the MIPAS ESA HNO3 VMRs with respect to the ground-based FTIR measurements at five stations, aircraft-based SAFIRE-A and ASUR, and the balloon campaign IBEX. The mean relative differences between the MIPAS and FTIR HNO3 partial columns are within +/- 2%, comparable to the MIPAS systematic error of similar to 2%. For the vertical profiles, the biases between the MIPAS and FTIR data are generally below 10% in the altitudes of 10 to 30 km. The MIPAS and SAFIRE HNO3 data generally match within their total error bars for the mid and high latitude flights, despite the larger atmospheric inhomogeneities that characterize the measurement scenario at higher latitudes. The MIPAS and ASUR comparison reveals generally good agreements better than 10-13% at 20-34 km. The MIPAS and IBEX measurements agree reasonably well (mean relative differences within +/- 15%) between 17 and 32 km. Statistical comparisons of the MIPAS profiles correlated with those of Odin/SMR, ILAS-II, and ACE-FTS generally show good consistency. The mean differences averaged over individual latitude bands or all bands are within the combined instrument errors, and generally within 1, 0.5, and 0.3 ppbv between 10 and 40 km (similar to 260 and 4.5 hPa) for Odin/SMR, ILAS-II, and ACE-FTS, respectively. The standard deviations of the differences are between 1 to 2 ppbv. The standard deviations for the satellite comparisons and for almost all other comparisons are generally larger than the estimated measurement uncertainty. This is associated with the temporal and spatial coincidence error and the horizontal smoothing error which are not taken into account in our error budget. Both errors become large when the spatial variability of the target molecule is high.Peer reviewe

Stratospheric HBr concentration profile obtained from far-infrared emission spectroscopy

Hydrogen bromide (HBr) is the principal bromine sink species for the ozone loss chemistry induced by bromine‐containing gases in the stratosphere. We report a 1994 balloon‐based measurement of the daytime stratospheric HBr profile between 20 and 36.5 km altitude. The average concentration result of 1.31±0.39 parts per trillion in volume (pptv) and an analysis for the concentration versus altitude profile are consistent with previously reported measurements. These results strengthen the evidence for a significantly higher HBr concentration than that predicted by current photochemical models which, on the basis of recent kinetics results, do not include significant HBr production by the reaction branch, BrO + HO2 → HBr + O3

Admittance spectroscopy for non-crystalline thin film devices characterization: comparison of Cu (In, Ga) Se 2 and a-Si: H cases

International audienceAdmittance spectroscopy of rectifying junctions is known to be a powerful technique for the characterization of bulk or interface defect properties in crystalline semiconductor based devices. In the case of non-crystalline semiconductors, e.g. polycrystalline or amorphous ones, specific models were developed to take into account the disordered structure which is typically the bulk of these materials. Different models were proposed in the literature, depending on the investigated materials. In this work, these models are reviewed and their basic assumptions are discussed and compared. This discussion will more particularly focus on the models, developed for the characterization of two important candidates on thin film solar cells, namely hydrogenated amorphous silicon and copper indium diselenide based materials. The benefits of frequency and temperature dependent admittance spectroscopy are illustrated with results, concerning the evaluation of some technological processes relevant to these materials for photovoltaic applications

ELECTRON DRIFT MOBILITY MEASUREMENT IN UNDOPED TRIODE DC SPUTTERED a-Si : H

No abstract availabl