Analytical Expression for the RKKY Interaction in Doped Graphene

We obtain an analytical expression for the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction $J$ in electron or hole doped graphene for linear Dirac bands. The results agree very well with the numerical calculations for the full tight-binding band structure in the regime where the linear band structure is valid. The analytical result, expressed in terms of the Meijer G-function, consists of a product of two oscillatory terms, one coming from the interference between the two Dirac cones and the second coming from the finite size of the Fermi surface. For large distances, the Meijer G-function behaves as a sinusoidal term, leading to the result $J \sim R^{-2} k_F \sin (2 k_F R) {1 + \cos[(K-K').R]}$ for moments located on the same sublattice. The $R^{-2}$ dependence, which is the same for the standard two-dimensional electron gas, is universal irrespective of the sublattice location and the distance direction of the two moments except when $k_F =0$ (undoped case), where it reverts to the $R^{-3}$ dependence. These results correct several inconsistencies found in the literature.Comment: 5 pages, 5 figure

Probing molecular dynamics at the nanoscale via an individual paramagnetic center

Understanding the dynamics of molecules adsorbed to surfaces or confined to small volumes is a matter of increasing scientific and technological importance. Here, we demonstrate a pulse protocol using individual paramagnetic nitrogen vacancy (NV) centers in diamond to observe the time evolution of 1H spins from organic molecules located a few nanometers from the diamond surface. The protocol records temporal correlations among the interacting 1H spins, and thus is sensitive to the local system dynamics via its impact on the nuclear spin relaxation and interaction with the NV. We are able to gather information on the nanoscale rotational and translational diffusion dynamics by carefully analyzing the time dependence of the NMR signal. Applying this technique to various liquid and solid samples, we find evidence that liquid samples form a semi-solid layer of 1.5 nm thickness on the surface of diamond, where translational diffusion is suppressed while rotational diffusion remains present. Extensions of the present technique could be adapted to highlight the chemical composition of molecules tethered to the diamond surface or to investigate thermally or chemically activated dynamical processes such as molecular folding

Optical properties of an ensemble of G-centers in silicon

We addressed the carrier dynamics in so-called G-centers in silicon (consisting of substitutional-interstitial carbon pairs interacting with interstitial silicons) obtained via ion implantation into a silicon-on-insulator wafer. For this point defect in silicon emitting in the telecommunication wavelength range, we unravel the recombination dynamics by time-resolved photoluminescence spectroscopy. More specifically, we performed detailed photoluminescence experiments as a function of excitation energy, incident power, irradiation fluence and temperature in order to study the impact of radiative and non-radiative recombination channels on the spectrum, yield and lifetime of G-centers. The sharp line emitting at 969 meV ($\sim$1280 nm) and the broad asymmetric sideband developing at lower energy share the same recombination dynamics as shown by time-resolved experiments performed selectively on each spectral component. This feature accounts for the common origin of the two emission bands which are unambiguously attributed to the zero-phonon line and to the corresponding phonon sideband. In the framework of the Huang-Rhys theory with non-perturbative calculations, we reach an estimation of 1.6$\pm$0.1 \angstrom for the spatial extension of the electronic wave function in the G-center. The radiative recombination time measured at low temperature lies in the 6 ns-range. The estimation of both radiative and non-radiative recombination rates as a function of temperature further demonstrate a constant radiative lifetime. Finally, although G-centers are shallow levels in silicon, we find a value of the Debye-Waller factor comparable to deep levels in wide-bandgap materials. Our results point out the potential of G-centers as a solid-state light source to be integrated into opto-electronic devices within a common silicon platform

Anisotropic and strong negative magneto-resistance in the three-dimensional topological insulator Bi2Se3

We report on high-field angle-dependent magneto-transport measurements on epitaxial thin films of Bi2Se3, a three-dimensional topological insulator. At low temperature, we observe quantum oscillations that demonstrate the simultaneous presence of bulk and surface carriers. The magneto- resistance of Bi2Se3 is found to be highly anisotropic. In the presence of a parallel electric and magnetic field, we observe a strong negative longitudinal magneto-resistance that has been consid- ered as a smoking-gun for the presence of chiral fermions in a certain class of semi-metals due to the so-called axial anomaly. Its observation in a three-dimensional topological insulator implies that the axial anomaly may be in fact a far more generic phenomenon than originally thought.Comment: 6 pages, 4 figure

Stark shift and field ionization of arsenic donors in 28^{28}Si-SOI structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures, and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified $^{28}$Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to $\sim$ 2 V/$\mu$m to be applied across the SOI layer. Utilizing this structure we measure the Stark shift parameters of arsenic donors embedded in the $^{28}$Si SOI layer and find a contact hyperfine Stark parameter of $\eta_a=-1.9\pm0.2\times10^{-3} \mu$m$^2$/V$^2$. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.Comment: 5 pages, 3 figure

Local structure of liquid carbon controls diamond nucleation

Diamonds melt at temperatures above 4000 K. There are no measurements of the steady-state rate of the reverse process: diamond nucleation from the melt, because experiments are difficult at these extreme temperatures and pressures. Using numerical simulations, we estimate the diamond nucleation rate and find that it increases by many orders of magnitude when the pressure is increased at constant supersaturation. The reason is that an increase in pressure changes the local coordination of carbon atoms from three-fold to four-fold. It turns out to be much easier to nucleate diamond in a four-fold coordinated liquid than in a liquid with three-fold coordination, because in the latter case the free-energy cost to create a diamond-liquid interface is higher. We speculate that this mechanism for nucleation control is relevant for crystallization in many network-forming liquids. On the basis of our calculations, we conclude that homogeneous diamond nucleation is likely in carbon-rich stars and unlikely in gaseous planets

Remote participation during glycosylation reactions of galactose building blocks: Direct evidence from cryogenic vibrational spectroscopy

The stereoselective formation of 1,2‐cis‐glycosidic bonds is challenging. However, 1,2‐cis‐selectivity can be induced by remote participation of C4 or C6 ester groups. Reactions involving remote participation are believed to proceed via a key ionic intermediate, the glycosyl cation. Although mechanistic pathways were postulated many years ago, the structure of the reaction intermediates remained elusive owing to their short‐lived nature. Herein, we unravel the structure of glycosyl cations involved in remote participation reactions via cryogenic vibrational spectroscopy and first principles theory. Acetyl groups at C4 ensure α‐selective galactosylations by forming a covalent bond to the anomeric carbon in dioxolenium‐type ions. Unexpectedly, also benzyl ether protecting groups can engage in remote participation and promote the stereoselective formation of 1,2‐cis‐glycosidic bonds

Effects of hole-doping on the magnetic ground state and excitations in the edge-sharing CuO2_2 chains of Ca2+x_{2+x}Y2−x_{2-x}Cu5_5O10_{10}

Neutron scattering experiments were performed on the undoped and hole-doped Ca$_{2+x}$Y$_{2-x}$Cu$_5$O$_{10}$, which consists of ferromagnetic edge-sharing CuO$_2$ chains. It was previously reported that in the undoped Ca$_2$Y$_2$Cu$_5$O$_{10}$ there is an anomalous broadening of spin-wave excitations along the chain, which is caused mainly by the antiferromagnetic interchain interactions [Matsuda $et$ $al.$, Phys. Rev. B 63, 180403(R) (2001)]. A systematic study of temperature and hole concentration dependencies of the magnetic excitations shows that the magnetic excitations are softened and broadened with increasing temperature or doping holes irrespective of $Q$ direction. The broadening is larger at higher $Q$. A characteristic feature is that hole-doping is much more effective to broaden the excitations along the chain. It is also suggested that the intrachain interaction does not change so much with increasing temperature or doping although the anisotropic interaction and the interchain interaction are reduced. In the spin-glass phase ($x$=1.5) and nearly disordered phase ($x$=1.67) the magnetic excitations are much broadened in energy and $Q$. It is suggested that the spin-glass phase originates from the antiferromagnetic clusters, which are caused by the hole disproportionation.Comment: 8 pages, submitted to Phys. Rev.