Ultracold, radiative charge transfer in hybrid Yb ion - Rb atom traps

Ultracold hybrid ion-atom traps offer the possibility of microscopic manipulation of quantum coherences in the gas using the ion as a probe. However, inelastic processes, particularly charge transfer can be a significant process of ion loss and has been measured experimentally for the Yb$^{+}$ ion immersed in a Rb vapour. We use first-principles quantum chemistry codes to obtain the potential energy curves and dipole moments for the lowest-lying energy states of this complex. Calculations for the radiative decay processes cross sections and rate coefficients are presented for the total decay processes. Comparing the semi-classical Langevin approximation with the quantum approach, we find it provides a very good estimate of the background at higher energies. The results demonstrate that radiative decay mechanisms are important over the energy and temperature region considered. In fact, the Langevin process of ion-atom collisions dominates cold ion-atom collisions. For spin dependent processes \cite{kohl13} the anisotropic magnetic dipole-dipole interaction and the second-order spin-orbit coupling can play important roles, inducing couplingbetween the spin and the orbital motion. They measured the spin-relaxing collision rate to be approximately 5 orders of magnitude higher than the charge-exchange collision rate \cite{kohl13}. Regarding the measured radiative charge transfer collision rate, we find that our calculation is in very good agreement with experiment and with previous calculations. Nonetheless, we find no broad resonances features that might underly a strong isotope effect. In conclusion, we find, in agreement with previous theory that the isotope anomaly observed in experiment remains an open question.Comment: 7 figures, 1 table accepted for publication in J. Phys. B: At. Mol. Opt. Phys. arXiv admin note: text overlap with arXiv:1107.114

Electron release of rare gas atom clusters under an intense laser pulse

Calculating the energy absorption of atomic clusters as a function of the laser pulse length $T$ we find a maximum for a critical $T^*$. We show that $T^*$ can be linked to an optimal cluster radius $R^*$. The existence of this radius can be attributed to the enhanced ionization mechanism originally discovered for diatomic molecules. Our findings indicate that enhanced ionization should be operative for a wide class of rare gas clusters. From a simple Coulomb explosion ansatz, we derive an analytical expression relating the maximum energy release to a suitably scaled expansion time which can be expressed with the pulse length $T^*$.Comment: 4 pages, 5 figure

Energy spectrum and Landau levels in bilayer graphene with spin-orbit interaction

We present a theoretical study of the bandstructure and Landau levels in bilayer graphene at low energies in the presence of a transverse magnetic field and Rashba spin-orbit interaction in the regime of negligible trigonal distortion. Within an effective low energy approach (L\"owdin partitioning theory) we derive an effective Hamiltonian for bilayer graphene that incorporates the influence of the Zeeman effect, the Rashba spin-orbit interaction, and inclusively, the role of the intrinsic spin-orbit interaction on the same footing. Particular attention is spent to the energy spectrum and Landau levels. Our modeling unveil the strong influence of the Rashba coupling $\lambda_R$ in the spin-splitting of the electron and hole bands. Graphene bilayers with weak Rashba spin-orbit interaction show a spin-splitting linear in momentum and proportional to $\lambda_R$, but scales inversely proportional to the interlayer hopping energy $\gamma_1$. However, at robust spin-orbit coupling $\lambda_R$ the energy spectrum shows a strong warping behavior near the Dirac points. We find the bias-induced gap in bilayer graphene to be decreasing with increasing Rashba coupling, a behavior resembling a topological insulator transition. We further predict an unexpected assymetric spin-splitting and crossings of the Landau levels due to the interplay between the Rashba interaction and the external bias voltage. Our results are of relevance for interpreting magnetotransport and infrared cyclotron resonance measurements, including also situations of comparatively weak spin-orbit coupling.Comment: 25 pages, 5 figure

Recycling cellular downlink energy for overlay self-sustainable IoT networks

This paper investigates the self-sustainability of an overlay Internet of Things (IoT) network that relies on harvest- ing energy from a downlink cellular network. Using stochastic geometry and queueing theory, we develop a spatiotemporal model to derive the steady state distribution of the number of packets in the bu ff ers and energy levels in the batteries of IoT devices given that the IoT and cellular communications are allocated disjoint spectrum. Particularly, each IoT device is modeled via a two-dimensional discrete-time Markov Chain (DTMC) that jointly tracks the evolution of data bu ff er and energy battery. In this context, stochastic geometry is used to derive the energy generation at the batteries and the packet transmission probability from bu ff ers taking into account the mutual interference from other active IoT devices. To this end, we show the Pareto-Frontiers of the sustainability region, which defines the network parameters that ensure stable network operation and finite packet delay. The results provide several insights to design self-sustainable IoT networks. Index Terms —Spatiotemporal models, stochastic geometry, queuing theory, energy harvesting, packet transmission success probability, two-dimensional discrete-time Markov chain, sta- bility conditions

Gate-tunable bandgap in bilayer graphene

The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement.Comment: 6 pages, 5 figure