7 research outputs found

    Captured by Evil: The Idea of Corruption in Law

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    Corruption is one of the most powerful words in the English language. When it comes to the treatment of corruption by law, however, corruption is a troubled concept. With increasing recognition of the costs of corruption for economic development, democratic governance, international aid programs, and other world goals, attempts to articulate what this destructive force is have led to an avalanche of theoretical writing. In the last fifteen years, corruption has been variously defined as the violation of law, a public servant\u27s breach of public duty, an agent\u27s betrayal of a principal\u27s interests, the pursuit of secrecy, the denial of equality in political influence, and other ways. In the end, however, all of these efforts fall short. Corruption is more than law-breaking: it is more than breaching public duties. To say that A is a thief or that A has breached his duty is not to say that A is corrupt. The latter is far more powerful, far more emotional, far more essential than the others. It is more than secrecy, or the denial of equal opportunity. It is a searing indictment, somehow, not only of A\u27s act but of A\u27s character. It is a statement not only of what A has done, but of what A has become. Corruption is, I argue, a far more powerful idea than these existing legal understandings have articulated: it is the idea of capture by evil, the possession of the individual by evil, in law. Just as we once believed in corruption of the blood in American law, which decreed that offspring of those who had committed crimes were believed to be irrevocably tainted by their parents\u27 depravity, so we still retain - through the idea of corruption - the belief that individual evil extends beyond acts of wrongdoing, or the denial of equal opportunity, or breach of the public trust. It is this idea of corruption, I argue - the idea of capture by evil - that, although unarticulated, drives our understandings of corruption in law. It drives our understanding of corrupt judges, who, once corrupt, we believe will act so in every case. It drives our understanding of campaign finance reform, where we fear deep corruption of the process from the occurrence of corrupt acts. It drives our understanding of corruption as a systemic effect and systemic influence, which presents institutional dangers that are greater than other crimes, and that requires purgation rather than simple law enforcement. This Article explores this deeper understanding of corruption, its impacts in areas such as judicial corruption and campaign finance reform, and its implications for the principle of the rule of law

    Effects of nitridation on SiC/SiO(2)structures studied by hard X-ray photoelectron spectroscopy

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    SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO2. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard x-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO2 and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes

    Identification of Lone-Pair Surface States on Indium Oxide

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    Indium oxide is widely used as a transparent electrode in optoelectronic devices and as a photocatalyst with activity for reduction of CO<sub>2</sub>. However, very little is known about the structural and electronic properties of its surfaces, particularly those prepared under reducing conditions. In this report, directional “lone-pair” surface states associated with filled 5s<sup>2</sup> orbitals have been identified on vacuum-annealed In<sub>2</sub>O<sub>3</sub>(111) through a combination of hard and soft X-ray photoemission spectroscopy and density functional theory calculations. The lone pairs reside on indium ad-atoms in a formal +1 oxidation state, each of which traps two electrons into a localized hybrid orbital protruding away from the surface and lying just above the valence band maximum in photoemission spectra. The third electron associated with the ad-atoms is delocalized into the conduction band, thus producing the surface electron accumulation layer identified previously on vacuum-annealed In<sub>2</sub>O<sub>3</sub>(111) (1 × 1) surfaces. The surface structure is further supported by low-energy electron diffraction, but there is no chemical shift in indium core level X-ray photoelectron spectra between surface In­(I) ad-atoms and bulk In­(III). The 5s<sup>2</sup> lone pairs confer Lewis basicity on the surface In sites and may have a pronounced impact on the catalytic or photocatalytic activity of reduced In<sub>2</sub>O<sub>3</sub>

    Core electron binding energies in solids from periodic all-electron Δ-self-consistent-field calculations

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    Theoretical calculations of core electron binding energies are required for the interpretation of experimental X-ray photoelectron spectra, but achieving accurate results for solids has proven difficult. In this work, we demonstrate that accurate absolute core electron binding energies in both metallic and insulating solids can be obtained from periodic all-electron Δ-self-consistent-field (ΔSCF) calculations. In particular, we show that core electron binding energies referenced to the valence band maximum can be obtained as total energy differences between two ( - 1)-electron systems: one with a core hole and one with an electron removed from the highest occupied valence state. To achieve convergence with respect to the supercell size, the analogy between localized core holes and charged defects is exploited. Excellent agreement between calculated and experimental core electron binding energies is found for both metals and insulators, with a mean absolute error of 0.24 eV for the systems considered
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