Comparison of 35 and 50 {\mu}m thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2

We report results from the testing of 35 {\mu}m thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 {\mu}m thick UFSD produced by HPK. The 35 {\mu}m thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 {\mu}m thick UFSD in timing accuracy, bias voltage and power can be established.Comment: 9 pages, 9 figures, HSTD11 Okinawa. arXiv admin note: text overlap with arXiv:1707.0496

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

This paper reports the last technological development on the Low Gain Avalanche Detector (LGAD) and introduces a new architecture of these detectors called inverse-LGAD (iLGAD). Both approaches are based on the standard Avalanche Photo Diodes (APD) concept, commonly used in optical and X-ray detection applications, including an internal multiplication of the charge generated by radiation. The multiplication is inherent to the basic n++-p+-p structure, where the doping profile of the p+ layer is optimized to achieve high field and high impact ionization at the junction. The LGAD structures are optimized for applications such as tracking or timing detectors for high energy physics experiments or medical applications where time resolution lower than 30 ps is required. Detailed TCAD device simulations together with the electrical and charge collection measurements are presented through this work.Comment: Keywords: silicon detectors, avalanche multiplication, timing detectors, tracking detectors. 8 pages. 8 Figure

Time Dependent Development of the Coulomb Gap

We show that the time development of the Coulomb gap in a Coulomb glass can involve very long relaxation times due to electron rearrangement and hopping. We find that an applied magnetic field reduces the rate of electron hopping and, hence, Coulomb gap formation. These results are consistent with recent conductance experiments on thin semiconducting and metallic films.Comment: 4 pages, Latex, 3 encapsulated postscript figure

Destruction of long-range antiferromagnetic order by hole doping

We study the renormalization of the staggered magnetization of a two-dimensional antiferromagnet as a function of hole doping, in the framework of the t-J model. It is shown that the motion of holes generates decay of spin waves into ''particle-hole'' pairs, which causes the destruction of the long-range magnetic order at a small hole concentration. This effect is mainly determined by the coherent motion of holes. The value obtained for the critical hole concentration, of a few percent, is consistent with experimental data for the doped copper oxide high-Tc superconductors.Comment: 12 pages, 2 figure

Molecular Mapping of Male-Sterility Loci ms2 and ms9 in Soybean

Markers linked to male-sterile, female-fertile loci on the soybean [Glycine max (L.) Merr.] molecular map would facilitate early identification of male-sterile plants. The objectives were to verify the chromosome location of the ms2 (A00–63) mutation, to determine the allelism and the chromosome location of the suspected ms2 [ms? (A00–39)] mutation, and to determine the chromosome location of the ms9 (T359) mutation. Simple sequence repeat (SSR) markers were used to molecularly map the male-sterile, female-fertile loci reported in this study. Segregating F2 populations were developed from crosses of ms?ms? (A00–39) × ‘Minsoy’ (PI 278901), ms2ms2 (A00–63) × Minsoy, and Minsoy × Ms9ms9 (T359H). The ms?(A00–39) locus was positioned on MLG O at 9.9 centiMorgans (cM) distance from the marker Sat_190. The ms2 (A00–63) locus was positioned on molecular linkage group (MLG) O between markers Sat_190 and Scaa001, with a distance of 6.9 and 9.0 cM, respectively. Thems9 locus was located on MLG N between markers Satt521 and Satt237, with a distance of 8.5 and 16.2 cM, respectively. Classical allelism tests confirmed that mutant ms? (A00–39) was allelic to ms2 (A00–63). The A00–39 mutant line was assigned Genetic Type Collection number T375H and gene symbol Ms2ms2 (Ames 2). Thus Genetic Type T360H, previously identified at Ames, Iowa, becomes Ms2ms2 (Ames 1)

Electron-beam induced synthesis of nanostructures: a review

As the success of nanostructures grows in modern society so does the importance of our ability to control their synthesis in precise manners, often with atomic precision as this can directly affect the final properties of the nanostructures. Hence it is crucial to have both deep insight, ideally with real-time temporal resolution, and precise control during the fabrication of nanomaterials. Transmission electron microscopy offers these attributes potentially providing atomic resolution with near real time temporal resolution. In addition, one can fabricate nanostructures in situ in a TEM. This can be achieved with the use of environmental electron microscopes and/or specialized specimen holders. A rather simpler and rapidly growing approach is to take advantage of the imaging electron beam as a tool for in situ reactions. This is possible because there is a wealth of electron specimen interactions, which, when implemented under controlled conditions, enable different approaches to fabricate nanostructures. Moreover, when using the electron beam to drive reactions no specialized specimen holders or peripheral equipment is required. This review is dedicated to explore the body of work available on electron-beam induced synthesis techniques with in situ capabilities. Particular emphasis is placed on the electron beam-induced synthesis of nanostructures conducted inside a TEM, viz. the e-beam is the sole (or primary) agent triggering and driving the synthesis process

Anomalous Hopping Exponents of Ultrathin Films of Metals

The temperature dependence of the resistance R(T) of ultrathin quench-condensed films of Ag, Bi, Pb and Pd has been investigated. In the most resistive films, R(T)=Roexp(To/T)^x, where x=0.75. Surprisingly, the exponent x was found to be constant for a wide range of Ro and To in all four materials, possibly implying a consistent underlying conduction mechanism. The results are discussed in terms of several different models of hopping conduction.Comment: 6 pages, 5 figure

Radiation Hardness of Thin Low Gain Avalanche Detectors

Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors