627 research outputs found
The Impact of Auctions on Residential Sales Prices in New Zealand
The use of an auction to sell residential real estate in the United States is often associated with distressed sales such as foreclosure, bankruptcy or estate settlement. In other areas of the world, auctions are more commonly used and viewed as a viable, preferred method of selling a house. This article uses hedonic pricing methodology to compare the sale prices of houses in Christchurch, New Zealand sold at auction with those sold by private treaty. The results indicate that in some cases auctions can result in premium sale prices. In none of the cases studied did auctions result in lower prices than private-treaty sales.
Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin
Hyperdoping has emerged as a promising method for designing semiconductors
with unique optical and electronic properties, although such properties
currently lack a clear microscopic explanation. Combining computational and
experimental evidence, we probe the origin of sub-band gap optical absorption
and metallicity in Se-hyperdoped Si. We show that sub-band gap absorption
arises from direct defect-to-conduction band transitions rather than free
carrier absorption. Density functional theory predicts the Se-induced
insulator-to-metal transition arises from merging of defect and conduction
bands, at a concentration in excellent agreement with experiment. Quantum Monte
Carlo calculations confirm the critical concentration, demonstrate that
correlation is important to describing the transition accurately, and suggest
that it is a classic impurity-driven Mott transition.Comment: 5 pages, 3 figures (PRL formatted
Insulator-to-metal transition in sulfur-doped silicon
We observe an insulator-to-metal (I-M) transition in crystalline silicon
doped with sulfur to non- equilibrium concentrations using ion implantation
followed by pulsed laser melting and rapid resolidification. This I-M
transition is due to a dopant known to produce only deep levels at equilibrium
concentrations. Temperature-dependent conductivity and Hall effect measurements
for temperatures T > 1.7 K both indicate that a transition from insulating to
metallic conduction occurs at a sulfur concentration between 1.8 and 4.3 x
10^20 cm-3. Conduction in insulating samples is consistent with variable range
hopping with a Coulomb gap. The capacity for deep states to effect metallic
conduction by delocalization is the only known route to bulk intermediate band
photovoltaics in silicon.Comment: Submission formatting; 4 journal pages equivalen
The Locations of Gamma-Ray Bursts Measured by COMPTEL
The COMPTEL instrument on the Compton Gamma Ray Observatory is used to
measure the locations of gamma-ray bursts through direct imaging of MeV
photons. In a comprehensive search, we have detected and localized 29 bursts
observed between 1991 April 19 and 1995 May 31. The average location accuracy
of these events is 1.25\arcdeg (1), including a systematic error of
\sim0.5\arcdeg, which is verified through comparison with Interplanetary
Network (IPN) timing annuli. The combination of COMPTEL and IPN measurements
results in locations for 26 of the bursts with an average ``error box'' area of
only 0.3 deg (1). We find that the angular distribution of
COMPTEL burst locations is consistent with large-scale isotropy and that there
is no statistically significant evidence of small-angle auto-correlations. We
conclude that there is no compelling evidence for burst repetition since no
more than two of the events (or 7% of the 29 bursts) could possibly have
come from the same source. We also find that there is no significant
correlation between the burst locations and either Abell clusters of galaxies
or radio-quiet quasars. Agreement between individual COMPTEL locations and IPN
annuli places a lower limit of 100~AU (95% confidence) on the distance to
the stronger bursts.Comment: Accepted for publication in the Astrophysical Journal, 1998 Jan. 1,
Vol. 492. 33 pages, 9 figures, 5 table
First results of the BATSE/COMPTEL/NMSU rapid burst response campaign
The Imaging Compton Telescope (COMPTEL) on board the Compton Gamma Ray Observatory regularly observes gamma‐ray bursts which occur inside the instrument’s ∼1 sr field‐of‐view. COMPTEL images bursts in the 0.75–30 MeV energy range with a typical location accuracy of 1–3 degrees, depending on burst strength, position, duration, and spectrum. COMPTEL’s imaging capability has been exploited in order to search for fading gamma‐ray burst counterparts at other wavelengths through the establishment of a BATSE/COMPTEL/NMSU rapid burst response campaign. This campaign utilizes near real‐time identification and preliminary burst location by BATSE, accelerated COMPTEL imaging, and a world‐wide network of observers to search COMPTEL error boxes as quickly as possible. Timely, deep searches for lingering counterpart emission of several bursts per year are the realized goal of this campaign. During its first year of operation, the rapid response program has been successfully applied to two strong bursts: GRB 930131 and GRB 930309. These bursts were imaged in record time only hours after their occurrence. Subsequently, several observations were made at radio and optical observatories world‐wide
Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v D, of Au and Zn, and put lower bounds on v D of the other metals ranging from 10² to 10⁴ m/s. Knowledge of v D is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10¹⁹ Au/cm³ without cellular breakdown. Values of v D are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D s(T m), and the equilibrium partition coefficient, k e, are shown to simultaneously affect v D. We demonstrate a correlation between v D and the ratio D s(T m)/k e ⁰·⁶⁷, which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D s(T m)/k e ⁰·⁶⁷ might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM.Research at Harvard was supported by The U.S. Army
Research Office under contracts W911NF-12-1-0196 and
W911NF-09-1-0118. M.T.W. and T.B.’s work was supported
by the U.S. Army Research Laboratory and the U.S.
Army Research Office under Grant No. W911NF-10-1-0442,
and the National Science Foundation (NSF) Faculty Early
Career Development Program ECCS-1150878 (to T.B.).
M.J.S., J.T.S., M.T.W., T.B., and S.G. acknowledge a generous
gift from the Chesonis Family Foundation and support in
part by the National Science Foundation (NSF) and the
Department of Energy (DOE) under NSF CA No. EEC-
1041895. S.C. and J.S.W.’s work was supported by The
Australian Research Council. J.M. was supported by a
National Research Council Research Associateship
Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v [subscript D], of Au and Zn, and put lower bounds on v [subscript D] of the other metals ranging from 10[superscript 2] to 10[superscript 4] m/s. Knowledge of v [subscript D] is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10[superscript 19] Au/cm[superscript 3] without cellular breakdown. Values of v [subscript D] are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D [subscript s](T [subscript m]), and the equilibrium partition coefficient, k [subscript e], are shown to simultaneously affect v [subscript D]. We demonstrate a correlation between v [subscript D] and the ratio D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67], which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D [subscript s](T [subscript m])/k [subscript e] [superscript 0.67] might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM.National Science Foundation (U.S.) (Faculty Early Career Development Program ECCS-1150878)Chesonis Family FoundationUnited States. Army Research Laboratory (United States. Army Research Office Grant W911NF-10-1-0442)National Science Foundation (U.S.) (United States. Dept. of Energy NSF CA EEC-1041895
Dark resonances for ground state transfer of molecular quantum gases
One possible way to produce ultracold, high-phase-space-density quantum gases
of molecules in the rovibronic ground state is given by molecule association
from quantum-degenerate atomic gases on a Feshbach resonance and subsequent
coherent optical multi-photon transfer into the rovibronic ground state. In
ultracold samples of Cs_2 molecules, we observe two-photon dark resonances that
connect the intermediate rovibrational level |v=73,J=2> with the rovibrational
ground state |v=0,J=0> of the singlet ground state potential.
For precise dark resonance spectroscopy we exploit the fact that it is possible
to efficiently populate the level |v=73,J=2> by two-photon transfer from the
dissociation threshold with the stimulated Raman adiabatic passage (STIRAP)
technique. We find that at least one of the two-photon resonances is
sufficiently strong to allow future implementation of coherent STIRAP transfer
of a molecular quantum gas to the rovibrational ground state |v=0,J=0>.Comment: 7 pages, 4 figure
Limits from the Hubble Space Telescope on a Point Source in SN 1987A
We observed supernova 1987A (SN 1987A) with the Space Telescope Imaging
Spectrograph (STIS) on the Hubble Space Telescope (HST) in 1999 September, and
again with the Advanced Camera for Surveys (ACS) on the HST in 2003 November.
No point source is observed in the remnant. We obtain a limiting flux of F_opt
< 1.6 x 10^{-14} ergs/s/cm^2 in the wavelength range 2900-9650 Angstroms for
any continuum emitter at the center of the supernova remnant (SNR). It is
likely that the SNR contains opaque dust that absorbs UV and optical emission,
resulting in an attenuation of ~35% due to dust absorption in the SNR. Taking
into account dust absorption in the remnant, we find a limit of L_opt < 8 x
10^{33} ergs/s. We compare this upper bound with empirical evidence from point
sources in other supernova remnants, and with theoretical models for possible
compact sources. Bright young pulsars such as Kes 75 or the Crab pulsar are
excluded by optical and X-ray limits on SN 1987A. Of the young pulsars known to
be associated with SNRs, those with ages < 5000 years are all too bright in
X-rays to be compatible with the limits on SN 1987A. Examining theoretical
models for accretion onto a compact object, we find that spherical accretion
onto a neutron star is firmly ruled out, and that spherical accretion onto a
black hole is possible only if there is a larger amount of dust absorption in
the remnant than predicted. In the case of thin-disk accretion, our flux limit
requires a small disk, no larger than 10^{10} cm, with an accretion rate no
more than 0.3 times the Eddington accretion rate. Possible ways to hide a
surviving compact object include the removal of all surrounding material at
early times by a photon-driven wind, a small accretion disk, or very high
levels of dust absorption in the remnant.Comment: 40 pages, 5 figures. AAStex. Accepted, ApJ 04/28/200
Ground deformation analysis at Campi Flegrei (Southern Italy) by CGPS and tide-gauge network
Campi Flegrei caldera is located 15 km west of the
city of Naples, within the central-southern sector of a
large graben called Campanian Plain. It is an active
volcanic area marked by a quasi-circular caldera
depression, formed by a huge ignimbritic eruption
occurred about 37000 years ago. This caldera was
generated by several collapses produced by strong
explosive eruptions (the last eruption, occurred in
1538, built an about 130 m spatter cone called Mt.
Nuovo). Campi Flegrei area periodically experiences
significant deformation episodes, with uplift
phenomena up to more than 3.5 m in 15 years (from
1970 to 1984), which caused during 1983-84 the
temporary evacuation of about 40000 people from the
ancient part of Pozzuoli town.
The deformation field obtainable by CGPS and tidegauge
stations plays an important role for the
modelling and interpretation of volcanic phenomena,
as well as for forecasting purposes.
The structural complexity of the Campi Flegrei area,
together with the evidence of a strong interaction
between magmatic chamber and shallow geothermal
system, calls for a detailed characterization of the
substructure and of magma-water interaction
processes.
The incoming experiment of deep drilling, down to
about 4 km, will give detailed structural and physical
constraints able to resolve the intrinsic ambiguities of
geophysical data and in particular geodetic ones.
In this poster we describe the recent ground
deformations at Campi Flegrei area by means of GPS
technique and tide gauge stations, discussing the
possible interpretations also in light of further
constraints likely coming from the next CFDDP
(Campi Flegrei Deep Drilling) deep drilling experiment
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