Spectral features due to inter-Landau-level transitions in the Raman spectrum of bilayer graphene

We investigate the contribution of the low-energy electronic excitations towards the Raman spectrum of bilayer graphene for the incoming photon energy Omega >> 1eV. Starting with the four-band tight-binding model, we derive an effective scattering amplitude that can be incorporated into the commonly used two-band approximation. Due to the influence of the high-energy bands, this effective scattering amplitude is different from the contact interaction amplitude obtained within the two-band model alone. We then calculate the spectral density of the inelastic light scattering accompanied by the excitation of electron-hole pairs in bilayer graphene. In the absence of a magnetic field, due to the parabolic dispersion of the low-energy bands in a bilayer crystal, this contribution is constant and in doped structures has a threshold at twice the Fermi energy. In an external magnetic field, the dominant Raman-active modes are the n_{-} to n_{+} inter-Landau-level transitions with crossed polarisation of in/out photons. We estimate the quantum efficiency of a single n_{-} to n_{+} transition in the magnetic field of 10T as I_{n_{-} to n_{+}}~10^{-12}.Comment: 7 pages, 3 figures, expanded version published in PR

Tunable Fermi surface topology and Lifshitz transition in bilayer graphene

Bilayer graphene is a highly tunable material: not only can one tune the Fermi energy using standard gates, as in single-layer graphene, but the band structure can also be modified by external perturbations such as transverse electric fields or strain. We review the theoretical basics of the band structure of bilayer graphene and study the evolution of the band structure under the influence of these two external parameters. We highlight their key role concerning the ease to experimentally probe the presence of a Lifshitz transition, which consists in a change of Fermi contour topology as a function of energy close to the edges of the conduction and valence bands. Using a device geometry that allows the application of exceptionally high displacement fields, we then illustrate in detail the way to probe the topology changes experimentally using quantum Hall effect measurements in a gapped bilayer graphene system.Comment: To be published in Synthetic Metals, special issue "Advances in Graphene

Transport signatures of pseudomagnetic Landau levels in strained graphene ribbons

In inhomogeneously strained graphene, low-energy electrons experience a valley-antisymmetric pseudomagnetic field which leads to the formation of localized states at the edge between the valence and conduction bands, understood in terms of peculiar n=0 pseudomagnetic Landau levels. Here we show that such states can manifest themselves as an isolated quadruplet of low-energy conductance resonances in a suspended stretched graphene ribbon, where clamping by the metallic contacts results in a strong inhomogeneity of strain near the ribbon ends

Moiré Superlattice Effects and Band Structure Evolution in Near-30-Degree Twisted Bilayer Graphene

In stacks of two-dimensional crystals, mismatch of their lattice constants and misalignment of crystallographic axes lead to formation of moir\'{e} patterns. We show that moir\'{e} superlattice effects persist in twisted bilayer graphene (tBLG) with large twists and short moir\'{e} periods. Using angle-resolved photoemission, we observe dramatic changes in valence band topology across large regions of the Brillouin zone, including the vicinity of the saddle point at $M$ and across 3 eV from the Dirac points. In this energy range, we resolve several moir\'{e} minibands and detect signatures of secondary Dirac points in the reconstructed dispersions. For twists $\theta>21.8^{\circ}$, the low-energy minigaps are not due to cone anti-crossing as is the case at smaller twist angles but rather due to moir\'{e} scattering of electrons in one graphene layer on the potential of the other which generates intervalley coupling. Our work demonstrates robustness of mechanisms which enable engineering of electronic dispersions of stacks of two-dimensional crystals by tuning the interface twist angles. It also shows that large-angle tBLG hosts electronic minigaps and van Hove singularities of different origin which, given recent progress in extreme doping of graphene, could be explored experimentally.Comment: main text: 25 pages, 5 figures; supplement: 22 pages, 7 figure

Large local lattice expansion in graphene adlayers grown on copper

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