Analytical estimate of open-circuit voltage of a Schottky-barrier solar cell under high level injection

The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV) of charge carriers on Voc was also estimated at such high level injections. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2789

Analytical estimate of open-circuit voltage of a Schottky-barrier solar cell under high level injection

The open-circuit voltage developed across a Schottky-Barrier (SB) solar cell was theoretically modeled to estimate it under high level injection conditions. An Open-circuit voltage (Voc) of 0.709 V was obtained for specific metal/n-Si SB solar cell. A substantial increase of 42.6 % in Voc was noticed while comparing our result with that previously calculated in low level injection conditions. Four different metals suitable for making Schottky contact with n-Si were investigated and calculated the variation of Voc with different values of doping concentrations in the semiconductor. The effect of surface recombination velocities (SRV) of charge carriers on Voc was also estimated at such high level injections. When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2789

Optimization of p-GaN/InGaN/n-GaN Double Heterojunction p-i-n Solar Cell for High Efficiency: Simulation Approach

We have conducted numerical simulation of p-GaN/In 0.12 Ga 0.88 N/n-GaN, p-i-n double heterojunction solar cell. The doping density, individual layer thickness, and contact pattern of the device are investigated under solar irradiance of AM1.5 for optimized performance of solar cell. The optimized solar cell characteristic parameters for cell area of 1 × 1 mm 2 are open circuit voltage of 2.26 V, short circuit current density of 3.31 mA/cm 2 , fill factor of 84.6%, and efficiency of 6.43% with interdigitated grid pattern

Graphene as transparent and current spreading electrode in silicon solar cell

Fabricated bi-layer graphene (BLG) has been studied as transparent and current spreading electrode (TCSE) for silicon solar cell, using TCAD-Silvaco 2D simulation. We have carried out comparative study using both Ag grids and BLG as current spreading electrode (CSE) and TCSE, respectively. Our study reveals that BLG based solar cell shows better efficiency of 24.85% than Ag-based cell (21.44%), in all of the critical aspects, including generation rate, recombination rate, electric field, potential and quantum efficiency. Further BLG based cell exhibits pronounce rectifying behavior, low saturation current, and good turn-on voltage while studying in dark