107 research outputs found
Towards high efficiency nanowire solar cells
Semiconductor nanowires are a class of materials recently gaining increasing interest for solar cell applications. In this article we review the development of the field with a special focus on the III-V materials due to their potential to reach high power conversion efficiencies. After introducing basic concepts of nanowire synthesis, we discuss important aspects of nanowire design for high power conversion efficiencies; first in terms of light absorption, then in terms of charge carrier separation and collection. Further, we examine methods to assess and understand the materials quality and the solar cell performance. We end the review by a discussion of strategies and challenges in achieving efficiencies above the Shockley-Queisser limit, and the potential for cost efficient production
InxGa1-xP Nanowire Growth Dynamics Strongly Affected by Doping Using Diethylzinc
Semiconductor nanowires are versatile building blocks for optoelectronic devices, in part because nanowires offer an increased freedom in material design due to relaxed constraints on lattice matching during the epitaxial growth. This enables the growth of ternary alloy nanowires in which the bandgap is tunable over a large energy range, desirable for optoelectronic devices. However, little is known about the effects of doping in the ternary nanowire materials, a prerequisite for applications. Here we present a study of p-doping of InxGa1-xP nanowires and show that the growth dynamics are strongly affected when diethylzinc is used as a dopant precursor. Specifically, using in situ optical reflectometry and high-resolution transmission electron microscopy we show that the doping results in a smaller nanowire diameter, a more predominant zincblende crystal structure, a more Ga-rich composition, and an increased axial growth rate. We attribute these effects to changes in seed particle wetting angle and increased TMGa pyrolysis efficiency upon introducing diethylzinc. Lastly, we demonstrate degenerate p-doping levels in InxGa1-xP nanowires by the realization of an Esaki tunnel diode. Our findings provide insights into the growth dynamics of ternary alloy nanowires during doping, thus potentially enabling the realization of such nanowires with high compositional homogeneity and controlled doping for high-performance optoelectronics devices
Diameter-dependent conductance of InAs nanowires
Electrical conductance through InAs nanowires is relevant for electronic
applications as well as for fundamental quantum experiments. Here we employ
nominally undoped, slightly tapered InAs nanowires to study the diameter
dependence of their conductance. Contacting multiple sections of each wire, we
can study the diameter dependence within individual wires without the need to
compare different nanowire batches. At room temperature we find a
diameter-independent conductivity for diameters larger than 40 nm, indicative
of three-dimensional diffusive transport. For smaller diameters, the resistance
increases considerably, in coincidence with a strong suppression of the
mobility. From an analysis of the effective charge carrier density, we find
indications for a surface accumulation layer.Comment: 9 pages, 5 figure
Implementing an Insect Brain Computational Circuit Using III–V Nanowire Components in a Single Shared Waveguide Optical Network
Recent developments in photonics include efficient nanoscale optoelectronic
components and novel methods for sub-wavelength light manipulation. Here, we
explore the potential offered by such devices as a substrate for neuromorphic
computing. We propose an artificial neural network in which the weighted
connectivity between nodes is achieved by emitting and receiving overlapping
light signals inside a shared quasi 2D waveguide. This decreases the circuit
footprint by at least an order of magnitude compared to existing optical
solutions. The reception, evaluation and emission of the optical signals are
performed by a neuron-like node constructed from known, highly efficient III-V
nanowire optoelectronics. This minimizes power consumption of the network. To
demonstrate the concept, we build a computational model based on an
anatomically correct, functioning model of the central-complex navigation
circuit of the insect brain. We simulate in detail the optical and electronic
parts required to reproduce the connectivity of the central part of this
network, using experimentally derived parameters. The results are used as input
in the full model and we demonstrate that the functionality is preserved. Our
approach points to a general method for drastically reducing the footprint and
improving power efficiency of optoelectronic neural networks, leveraging the
superior speed and energy efficiency of light as a carrier of information.Comment: 28 pages, 6 figures; supplementary information 15 pages, 8 figure
In situ etching for total control over axial and radial nanowire growth
We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching
Twinning superlattices in indium phosphide nanowires
Here, we show that we control the crystal structure of indium phosphide (InP)
nanowires by impurity dopants. We have found that zinc decreases the activation
barrier for 2D nucleation growth of zinc-blende InP and therefore promotes the
InP nanowires to crystallise in the zinc blende, instead of the commonly found
wurtzite crystal structure. More importantly, we demonstrate that we can, by
controlling the crystal structure, induce twinning superlattices with
long-range order in InP nanowires. We can tune the spacing of the superlattices
by the wire diameter and the zinc concentration and present a model based on
the cross-sectional shape of the zinc-blende InP nanowires to quantitatively
explain the formation of the periodic twinning.Comment: 18 pages, 4 figure
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Nanowires have the potential to play an important role for next-generation light-emitting diodes. In this work, we present a growth scheme for radial nanowire quantum-well structures in the AlGaInP material system using a GaInP nanowire core as a template for radial growth with GaInP as the active layer for emission and AlGaInP as charge carrier barriers. The different layers were analyzed by X-ray diffraction to ensure lattice-matched radial structures. Furthermore, we evaluated the material composition and heterojunction interface sharpness by scanning transmission electron microscopy energy dispersive X-ray spectroscopy. The electro-optical properties were investigated by injection luminescence measurements. The presented results can be a valuable track toward radial nanowire light-emitting diodes in the AlGaInP material system in the red/orange/yellow color spectrum
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