Characterization of Hydrogen Plasma used for Introducing Hydrogen into Semiconductors

This paper reports the investigation result of RF power effects on the RF hydrogen plasma parameters. The hydrogen plasma parameters are measured experimentally in the center of the deposition chamber by means of the cylindrical Langmuir probe. The measurements are done at 0.2 mbar hydrogen gas pressures. The applied discharge powers are between 50 W and 200 W. It is found that the electron and ion densities increase with the RF power. The ion density dependence of the cathode sheath voltage is fitted to Ni(cm-3)=-3.5 1010 + 9.2  107 (Vo - Vdc). The plasma and floating potentials are less sensitive to RF power.This paper reports the investigation result of RF power effects on the RF hydrogen plasma parameters. The hydrogen plasma parameters are measured experimentally in the center of the deposition chamber by means of the cylindrical Langmuir probe. The measurements are done at 0.2 mbar hydrogen gas pressures. The applied discharge powers are between 50 W and 200 W. It is found that the electron and ion densities increase with the RF power. The ion density dependence of the cathode sheath voltage is fitted to Ni(cm-3)=-3.5 1010 + 9.2  107 (Vo - Vdc). The plasma and floating potentials are less sensitive to RF power

MONTE CARLO SIMULATION OF INTERACTION BETWEEN AN ELECTRON BEAM AND A NANO-SILICON FILM

Due to the fundamental role played by the interaction electron-matter in scanning electron microscopy (Electron Beam Induced Current -EBIC- in Silicon case), a Monte  Carlo calculation model of this interaction applied in  silicon nanostructure (nano-film) is presented in the present paper. After a brief introduction to scattering process, our model procedure is described in which electron trajectories in the sample, penetration range (in depth and in spread) , backscattered and secondary electron yields (the total electron yield) for nano-films of Silicon are calculated. The variation of this parameters with angle of incidence and impact energy have been studied. The validation  of our model is performed by means of comparison with  results which been reported by various authors

Non-linear optical and electrical properties of ZnO doped Ni Thin Films obtained using spray ultrasonic technique

In the present study zinc oxide doped Nickel thin films (ZnO:Ni) were deposited on glass substrates using a chemical spray ultrasonic technique. The effect of Ni concentration on the structural, electrical, optical, and non-linear optical (NLO) properties of the ZnO:Ni thin films was investigated. The films were analyzed using X-ray diffraction (XRD), profilometry and optical transmittance. A polycrystalline structure with a preferential growth along the ZnO (002) plane was found, the optical transmittance was found to be higher than 80% and the band gap (E(g)) varied from 3.19 to 3.27 eV. The value of the electrical conductivity was found. Moreover, the effective non-linear quadratic and cubic electronic susceptibilities of thin film samples were determined by the SHG and THG techniques, working at 1064 nm. (C) 2011 Elsevier B.V. All rights reserved

Characterization of in-situ Doped Polycrystalline Silicon Using Schottky Diodes and Admittance Spectroscopy

In this work, Schottky Au-Polycrystalline silicon diodes are successfully realised. The barrier height is around ФB = 0.74 eV as determined from Capacitance – Bias (C-V) characteristics. The depth profile of the apparent doping is deduced from these measurements. Its behaviour leads to the experimental profile. Moreover, the diode admittance measurements versus the frequency and the temperature at different biases show the possibility to use this device to characterise the electrical quality of the polycrystalline silicon

Effects of Different Cooking Methods on the Physico-Chemical and Quality Attributes of Eggplants

Two types of eggplants (Solanum melongena L.), Chinese Eggplant and Indian Eggplant were cooked at three different cooking methods including frying, grilling and superheated steam (SHS). The objective of this research was to discover the effect of different cooking methods on the quality attributes of eggplant in terms of the physico-chemical properties, antioxidant properties and overall acceptability. The conditions for frying and grilling were set at 170°C for 7 minutes meanwhile; two parameters were used in SHS including 170°C for 7 minutes and 220°C at 15 minutes as the optimum conditions. SHS gives highest results in terms of physicochemical properties and antioxidant properties but frying methods gain high scores for the overall acceptability. Based on the results it can be concluded that even though SHS gives healthier and better results of the eggplant, but, texture, taste and aroma will influence on the acceptability of the final food products

Influence of Bi doping on the electrical and optical properties of ZnO thin films Superlattices and Microstructures

Transparent conducting ZnO doped Bi thin films were prepared on glass substrates by ultrasonic spray method. The influence of Bi doping concentration on the structural, optical and nonlinear optical properties of ZnO thin films was studied. The X-ray diffraction (XRD) analysis show that all studied films have a hexagonal wurtzite structure and are preferentially oriented along the c-axis from substrate surface. Optical transmittance measurements show that all samples have average 80% transparency in the visible light. Optical band gap values range between 3.14 and 3.28 eV. ZnO film with 3 wt% of Bi showed the highest electrical conductivity. In addition, the second and third order nonlinear susceptibilities were determined and their values have been calculated

ADAMTS19-associated heart valve defects: Novel genetic variants consolidating a recognizable cardiac phenotype

Recently, ADAMTS19 was identified as a novel causative gene for autosomal recessive heart valve disease (HVD), affecting mainly the aortic and pulmonary valves. Exome sequencing and data repository (CentoMD) analyses were performed to identify patients with ADAMTS19 variants (two families). A third family was recognized based on cardiac phenotypic similarities and SNP array homozygosity. Three novel loss of function (LoF) variants were identified in six patients from three families. Clinically, all patients presented anomalies of the aortic/pulmonary valves, which included thickening of valve leaflets, stenosis and insufficiency. Three patients had (recurrent) subaortic membrane, suggesting that ADAMTS19 is the first gene identified related to discrete subaortic stenosis. One case presented a bi-commissural pulmonary valve. All patients displayed some degree of atrioventricular valve insufficiency. Other cardiac anomalies included atrial/ventricular septal defects, persistent ductus arteriosus, and mild dilated ascending aorta. Our findings confirm that biallelic LoF variants in ADAMTS19 are causative of a specific and recognizable cardiac phenotype. We recommend considering ADAMTS19 genetic testing in all patients with multiple semilunar valve abnormalities, particularly in the presence of subaortic membrane. ADAMTS19 screening in patients with semilunar valve abnormalities is needed to estimate the frequency of the HVD related phenotype, which might be not so rare