Síndrome de Burnout entre enfermeiros de um hospital geral da cidade do Recife

Este estudo descritivo, transversal, censitário, identificou Burnout e alguns fatores associados entre enfermeiros da assistência pediátrica e tocoginecológica de hospital geral do nível terciário de atenção do Recife (PE). Participaram 63 profissionais (98,4% do total) que responderam a um questionário auto-aplicável (aspectos sócio-demográficos, condições laborais e Maslach Burnout Inventory). Na análise utilizou-se qui-quadrado, com nível de confiança de 95%. Predominou o gênero feminino (92,1%), com até cinco anos de profissão (68,2%), sendo 52,5% da área pediátrica. Constataram-se altos níveis de exaustão emocional (49,2%) e despersonalização (27,0%) e baixo nível de realização profissional (4,8%), estando 4,7% com Burnout. Mostraram associação: alto nível de exaustão emocional e realizar frequentemente/sempre tarefas com muita rapidez (p=0,039) e receber salário incompatível com o esforço empregado (p=0,016); altos níveis de despersonalização e ter até cinco anos de profissão (p=0,010) e efetuar frequentemente/sempre tarefas com muita rapidez (p=0,009). Para 19,0% pelo menos duas das três dimensões apontavam alta propensão à síndrome

A 1H, 13C, 31P and 15N NMR study of (pyrrolidine-2,2-diyl)bisphosphonic acid, tetraalkyl(pyrrolidine-2,2-diyl)bisphosphonates and acyclic tetraethyl bisphosphonates

A multinuclear magnetic resonance study (1H, 13C, 31P, 15N) was performed on a series of new cyclic pyrrolidine bisphosphonates and acyclic bisphosphonates. Values are reported and discussed for the chemical shifts and coupling constants of the various nuclei

A Physical Synthesis Flow for Early Technology Evaluation of Silicon Nanowire based Reconfigurable FETs

Silicon Nanowire (SiNW) based reconfigurable fieldeffect transistors (RFETs) provide an additional gate terminal called the program gate which gives the freedom of programming p-type or n-type functionality for the same device at runtime. This enables the circuit designers to pack more functionality per computational unit. This saves processing costs as only one device type is required, and no doping and associated lithography steps are needed for this technology. In this paper, we present a complete design flow including both logic and physical synthesis for circuits based on SiNW RFETs. We propose layouts of logic gates, Liberty and LEF (Library Exchange Format) files to enable further research in the domain of these novel, functionally enhanced transistors. We show that in the first of its kind comparison, for these fully symmetrical reconfigurable transistors, the area after placement and routing for SiNW based circuits is 17% more than that of CMOS for MCNC benchmarks. Further, we discuss areas of improvement for obtaining better area results from the SiNW based RFETs from a fabrication and technology point of view. The future use of self-aligned techniques to structure two independent gates within a smaller pitch holds the promise of substantial area reduction

Designing Efficient Circuits Based on Runtime-Reconfigurable Field-Effect Transistors

An early evaluation in terms of circuit design is essential in order to assess the feasibility and practicability aspects for emerging nanotechnologies. Reconfigurable nanotechnologies, such as silicon or germanium nanowire-based reconfigurable field-effect transistors, hold great promise as suitable primitives for enabling multiple functionalities per computational unit. However, contemporary CMOS circuit designs when applied directly with this emerging nanotechnology often result in suboptimal designs. For example, 31% and 71% larger area was obtained for our two exemplary designs. Hence, new approaches delivering tailored circuit designs are needed to truly tap the exciting feature set of these reconfigurable nanotechnologies. To this effect, we propose six functionally enhanced logic gates based on a reconfigurable nanowire technology and employ these logic gates in efficient circuit designs. We carry out a detailed comparative study for a reconfigurable multifunctional circuit, which shows better normalized circuit delay (20.14%), area (32.40%), and activity as the power metric (40%) while exhibiting similar functionality as compared with the CMOS reference design. We further propose a novel design for a 1-bit arithmetic logic unit-based on silicon nanowire reconfigurable FETs with the area, normalized circuit delay, and activity gains of 30%, 34%, and 36%, respectively, as compared with the contemporary CMOS version

Exploiting Transistor-Level Reconfiguration to Optimize Combinational Circuits on the Example of a Conditional Sum Adder

Silicon nanowire reconfigurable field effect transistors (SiNW RFETs) abolish the physical separation of n-type and p-type transistors by taking up both roles in a configurable way within a doping-free technology. However, the potential of transistor-level reconfigurability has not been demonstrated in larger circuits, so far. In this paper, we present first steps to a new compact and efficient design of combinational circuits by employing transistor-level reconfiguration. We contribute new basic gates realized with silicon nanowires, such as 2/3-XOR and MUX gates. Exemplifying our approach with 4-bit, 8-bit and 16-bit conditional carry adders, we were able to reduce the number of transistors to almost one half. With our current case study we show that SiNW technology can reduce the required chip area by 16 %, despite larger size of the individual transistor, and improve circuit speed by 26 %