Delta Advanced Reusable Transport (DART): An alternative manned spacecraft

Although the current U.S. Space Transportation System (STS) has proven successful in many applications, the truth remains that the space shuttle is not as reliable or economical as was once hoped. In fact, the Augustine Commission on the future of the U.S. Space Program has recommended that the space shuttle only be used on missions directly requiring human capabilities on-orbit and that the shuttle program should eventually be phased out. This poses a great dilemma since the shuttle provides the only current or planned U.S. means for human access to space at the same time that NASA is building toward a permanent manned presence. As a possible solution to this dilemma, it is proposed that the U.S. begin development of an Alternative Manned Spacecraft (AMS). This spacecraft would not only provide follow-on capability for maintaining human space flight, but would also provide redundancy and enhanced capability in the near future. Design requirements for the AMS studied include: (1) capability of launching on one of the current or planned U.S. expendable launch vehicles (baseline McDonnell Douglas Delta II model 7920 expendable booster); (2) application to a wide variety of missions including autonomous operations, space station support, and access to orbits and inclinations beyond those of the space shuttle; (3) low enough costing to fly regularly in augmentation of space shuttle capabilities; (4) production surge capabilities to replace the shuttle if events require it; (5) intact abort capability in all flight regimes since the planned launch vehicles are not man-rated; (6) technology cut-off date of 1990; and (7) initial operational capability in 1995. In addition, the design of the AMS would take advantage of scientific advances made in the 20 years since the space shuttle was first conceived. These advances are in such technologies as composite materials, propulsion systems, avionics, and hypersonics

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon

The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH₄F(aq) has been investigated during either linear-sweep voltammetry or when the electrode was held at a constant potential (E = +6.0 V versus Ag/AgCl). Optical images collected in situ during electrochemical experiments revealed the location and underlying mechanism of initiation and propagation of the structures on the surface. X-ray photoelectron spectroscopic (XPS) data collected for samples emersed from the electrolyte at varied times provided detailed information about the chemistry of the surface during fractal etching. The fractal structure was strongly influenced by the orientation of the crystalline Si sample. The etch patterns were initially generated at points along the circumference of bubbles that formed upon immersion of n-Si(100) samples in the electrolyte, most likely due to the electrochemical and electronic isolation of areas beneath bubbles. XPS data showed the presence of a tensile-stressed silicon surface throughout the etching process as well as the presence of SiO_xF_y on the surface. The two-dimensional fractal dimension D_(f,2D) of the patterns increased with etching time to a maximum observed value of D_(f,2D)=1.82. Promotion of fractal etching near etch masks that electrochemically and electronically isolated areas of the photoelectrode surface enabled the selective placement of highly branched structures at desired locations on an electrode surface

Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure

Photosynthesis is nature’s route to convert intermittent solar irradiation into storable energy, while its use for an industrial energy supply is impaired by low efficiency. Artificial photosynthesis provides a promising alternative for efficient robust carbon-neutral renewable energy generation. The approach of direct hydrogen generation by photoelectrochemical water splitting utilizes customized tandem absorber structures to mimic the Z-scheme of natural photosynthesis. Here a combined chemical surface transformation of a tandem structure and catalyst deposition at ambient temperature yields photocurrents approaching the theoretical limit of the absorber and results in a solar-to-hydrogen efficiency of 14%. The potentiostatically assisted photoelectrode efficiency is 17%. Present benchmarks for integrated systems are clearly exceeded. Details of the in situ interface transformation, the electronic improvement and chemical passivation are presented. The surface functionalization procedure is widely applicable and can be precisely controlled, allowing further developments of high-efficiency robust hydrogen generators

Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)

Energy storage is a key challenge in solar-driven renewable energy conversion. We promote a photochemical diode based on dilute nitride GaPN grown lattice-matched on Si(100), which could reach both high photovoltaic efficiencies and evolve hydrogen directly without external bias. Homoepitaxial GaP(100) surface preparation was shown to have a significant impact on the semiconductor-water interface formation. Here, we grow a thin, pseudomorphic GaP nucleation buffer on almost single-domain Si(100) prior to GaPN growth and compare the GaP_(0.98)N_(0.02)/Si(100) surface preparation to established P- and Ga-rich surfaces of GaP/Si(100). We apply reflection anisotropy spectroscopy to study the surface preparation of GaP_(0.98)N_(0.02) in situ in vapor phase epitaxy ambient and benchmark the signals to low energy electron diffraction, photoelectron spectroscopy, and x-ray diffraction. While the preparation of the Ga-rich surface is hardly influenced by the presence of the nitrogen precursor 1,1-dimethylhydrazine (UDMH), we find that stabilization with UDMH after growth hinders well-defined formation of the V-rich GaP_(0.98)N_(0.02)/Si(100) surface. Additional features in the reflection anisotropy spectra are suggested to be related to nitrogen incorporation in the GaP bulk

Density of Superfluid Helium Droplets

The classical integral cross sections of large superfluid 4He_N droplets and the number of atoms in the droplets (N=10^3-10^4) have been measured in molecular beam scattering experiments. These measurements are found to be in good agreement with the cross sections predicted from density functional calculations of the radial density distributions with a 10-90 % surface thickness of 5.7\AA. By using a simple model for the density profile of the droplets a thickness of about 6-8\AA is extracted directly from the data.Comment: 27 pages, REVTeX, 5 postscript figure

Genesis and Propagation of Fractal Structures During Photoelectrochemical Etching of n-Silicon

The genesis, propagation, and dimensions of fractal-etch patterns that form anodically on front- or back-illuminated n-Si(100) photoelectrodes in contact with 11.9 M NH₄F(aq) has been investigated during either linear-sweep voltammetry or when the electrode was held at a constant potential (E = +6.0 V versus Ag/AgCl). Optical images collected in situ during electrochemical experiments revealed the location and underlying mechanism of initiation and propagation of the structures on the surface. X-ray photoelectron spectroscopic (XPS) data collected for samples emersed from the electrolyte at varied times provided detailed information about the chemistry of the surface during fractal etching. The fractal structure was strongly influenced by the orientation of the crystalline Si sample. The etch patterns were initially generated at points along the circumference of bubbles that formed upon immersion of n-Si(100) samples in the electrolyte, most likely due to the electrochemical and electronic isolation of areas beneath bubbles. XPS data showed the presence of a tensile-stressed silicon surface throughout the etching process as well as the presence of SiO_xF_y on the surface. The two-dimensional fractal dimension D_(f,2D) of the patterns increased with etching time to a maximum observed value of D_(f,2D)=1.82. Promotion of fractal etching near etch masks that electrochemically and electronically isolated areas of the photoelectrode surface enabled the selective placement of highly branched structures at desired locations on an electrode surface

Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties

Homoepitaxial p-InP(100) thin films prepared by MOVPE (metallorganic vapor phase epitaxy) were transformed into an InP/oxide-phosphate/Rh heterostructure by photoelectrochemical conditioning. Surface sensitive synchrotron radiation photoelectron spectroscopy indicates the formation of a mixed oxide constituted by In(PO_3)_3, InPO_4 and In_(2)O_3 as nominal components during photo-electrochemical activation. The operation of these films as hydrogen evolving photocathode proved a light-to-chemical energy conversion efficiency of 14.5%. Surface activation arises from a shift of the semiconductor electron affinity by 0.44 eV by formation of In-Cl interfacial dipoles with a density of about 10^(12) cm^(−2). Predominant local In2O3-like structures in the oxide introduce resonance states near the semiconductor conduction band edge imparting electron conductivity to the phosphate matrix. Surface reflectance investigations indicate an enhanced light-coupling in the layered architecture

Probing the structure and dynamics of molecular clusters using rotational wavepackets

The chemical and physical properties of molecular clusters can heavily depend on their size, which makes them very attractive for the design of new materials with tailored properties. Deriving the structure and dynamics of clusters is therefore of major interest in science. Weakly bound clusters can be studied using conventional spectroscopic techniques, but the number of lines observed is often too small for a comprehensive structural analysis. Impulsive alignment generates rotational wavepackets, which provides simultaneous information on structure and dynamics, as has been demonstrated successfully for isolated molecules. Here, we apply this technique for the firsttime to clusters comprising of a molecule and a single helium atom. By forcing the population of high rotational levels in intense laser fields we demonstrate the generation of rich rotational line spectra for this system, establishing the highly delocalised structure and the coherence of rotational wavepacket propagation. Our findings enable studies of clusters of different sizes and complexity as well as incipient superfluidity effects using wavepacket methods.Comment: 5 pages, 6 figure

CuAu-type ordering in epitaxial CuInS₂ films

Ordering of Cu and In atoms in near-stoichiometric CuInS2 epitaxial films grown on Si (111) by molecular beam epitaxy was studied by transmission electron microscopy. Nonchalcopyrite ordering of the metal atoms in CuInS2 is observed, which is identified as CuAu-type ordering. Sharp spots in electron diffraction patterns reveal the ordered Cu and In atom planes alternating along the [001] direction over a long range. High-resolution electron microscopy confirms this ordering. The CuAu-ordered structure coexists with the chalcopyrite ordered structure, in agreement with theoretical prediction

Nanoelectrical and Nanoelectrochemical Imaging of Pt/p-Si and Pt/p+-Si Electrodes

The interfacial properties of electrolessly deposited Pt nanoparticles (Pt-NP) on p-Si and p+-Si electrodes have been resolved on the nanometer scale using a combination of scanning probe methods. Atomic-force microscopy (AFM) showed highly dispersed Pt nanoparticles. Conductive AFM measurements showed that only about half of the particles exhibited measurable contact currents, with a factor of 10^3 difference in current. Local current-voltage measurements revealed a rectifying junction with a resistance of ≥ 10 MΩ at the Pt-NP/p-Si interface, while Pt-NP/p+-Si samples formed an Ohmic junction with a local resistance of ≥ 1 MΩ. The particles were strongly attached to the sample surface in air. However in contact with an electrolyte, the adhesion of the particles to the surface was substantially lower. Scanning electrochemical microscopy (SECM) showed smaller, but more uniform electrochemical currents for the particles relative to the currents observed in conductive AFM measurements. In accord with the conductive AFM measurements, SECM measurements showed conductance through the substrate for only a minority of the particles. These results suggest that the electrochemical performance of the electrolessly deposited Pt nanoparticles on Si is ascribable to: 1) the high resistance of the contact between the particles and the substrate; 2) the low (<50%) fraction of particles that support high currents; and 3) the low adhesion of the particles to the surface in the electrolyte