81 research outputs found
Unipolar spin diodes and transistors
doi:10.1063/1.1348317 http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000009001273000001&idtype=cvips&prog=normal&doi=10.1063/1.1348317Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.G.V. acknowledges support from NSF Grant Nos. DMR-9706788 and DMR-0074959. M.E.F. acknowledges support from NSF Grant No. ECS-0000556
Resonant Impurity States in the D-Density-Wave Phase
We study the electronic structure near impurities in the d-density-wave (DDW)
state, a possible candidate phase for the pseudo-gap region of the
high-temperature superconductors. We show that the local DOS near a
non-magnetic impurity in the DDW state is {\it qualitatively} different from
that in a superconductor with -symmetry. Since this result is a
robust feature of the DDW phase, it can help to identify the nature of the two
different phases recently observed by scanning tunneling microscopy experiments
in the superconducting state of underdoped Bi-2212 compounds
Checkerboard local density of states in striped domains pinned by vortices
Within a Green's function formalism we calculate the electronic structure
around static extended magnetic and non-magnetic perturbations in a d-wave
superconductor. In partucular, we discuss recent elastic neutron scattering and
scanning tunneling experiments on High-T_c cuprates exposed to an applied
magnetic field. A physical picture consisting of antiferromagnetic vortex cores
operating as pinning centers for surrounding stripes is qualitatively
consistent with the neutron data provided the stripes have the usual antiphase
modulation. The low energy electronic structure in such a region reveals a
checkerboard interference pattern consistent with recent scanning tunneling
experiments.Comment: 5 pages, 4 figure
Local density of states around a magnetic impurity in high-Tc superconductors based on the t-J model
The local density of states (LDOS) around a magnetic impurity in high-Tc
superconductors is studied using the two-dimensional t-J model with a realistic
band structure. The order parameters are determined in a self-consistent way
within the Gutzwiller approximation and the Bogoliubov-de Gennes theory. In
sharp contrast with the nonmagnetic impurity case, the LDOS near the magnetic
impurity shows two resonance peaks reflecting the presence of spin-dependent
resonance states. It is also shown that these resonance states are
approximately localized around the impurity. The present results have an large
implication on the scanning tunneling spectroscopy observation of
Bi_{2}Sr_{2}Ca(Cu_{1-x}Ni[Zn]_{x})_{2}O_{8+delta}.Comment: 4 pages, 3 figures, to appear in Phys. Rev. Let
Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors
is developed and applied to magnetic/nonmagnetic p-n junctions. Several
phenomena with possible spintronic applications are predicted, including
spinvoltaic effect, spin valve effect, and giant magnetoresistance. It is
demonstrated that only nonequilibrium spin can be injected across the
space-charge region of a p-n junction, so that there is no spin injection (or
extraction) at low bias.Comment: Minor Revisions. To appear in Phys. Rev. Let
Magnetic Anisotropy of Single Mn Acceptors in GaAs in an External Magnetic Field
We investigate the effect of an external magnetic field on the physical
properties of the acceptor hole states associated with single Mn acceptors
placed near the (110) surface of GaAs. Crosssectional scanning tunneling
microscopy images of the acceptor local density of states (LDOS) show that the
strongly anisotropic hole wavefunction is not significantly affected by a
magnetic field up to 6 T. These experimental results are supported by
theoretical calculations based on a tightbinding model of Mn acceptors in GaAs.
For Mn acceptors on the (110) surface and the subsurfaces immediately
underneath, we find that an applied magnetic field modifies significantly the
magnetic anisotropy landscape. However the acceptor hole wavefunction is
strongly localized around the Mn and the LDOS is quite independent of the
direction of the Mn magnetic moment. On the other hand, for Mn acceptors placed
on deeper layers below the surface, the acceptor hole wavefunction is more
delocalized and the corresponding LDOS is much more sensitive on the direction
of the Mn magnetic moment. However the magnetic anisotropy energy for these
magnetic impurities is large (up to 15 meV), and a magnetic field of 10 T can
hardly change the landscape and rotate the direction of the Mn magnetic moment
away from its easy axis. We predict that substantially larger magnetic fields
are required to observe a significant field-dependence of the tunneling current
for impurities located several layers below the GaAs surface.Comment: Non
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