Mechanism of efficient carbon monoxide oxidation at Ru(0001)

We performed density-functional theory calculations using the generalized gradient approximation for the exhange-correlation functional to investigate the unusual catalytic behavior of Ru under elevated gas pressure conditions for the carbon monoxide oxidation reaction, which includes a particularly high CO_2 turnover. Our calculations indicate that a full monolayer of adsorbed oxygen actuates the high rate, enabling CO_2 formation via both scattering of gas-phase CO molecules as well as by CO molecules adsorbed at oxygen vacancies in the adlayer, where the latter mechanism is expected to be very efficient due to the relatively weak adsorption energy of both CO and O, as well as the close proximity of these reactants. In the present paper we analyse the bonding and electronic properties associated with the reaction pathway for CO_2 production via the scattering reaction. We find that the identified ``bent'' transition state is due to electron transfer into the unoccupied 2 pi orbitals of the CO molecule which reduces the Pauli repulsion between the impinging CO and the O-covered surface. Bond formation to CO_2 then proceeds by electron transfer back from the CO 2 pi orbitals into the bonding region between CO and the adsorbed O atom.Comment: 20 pages, 7 figures. J. Vac. Sci. and Techn., in press (submitted September 1996

Coadsorption of CO and O on Ru(0001): A structural analysis by density functional theory

Knowledge of the atomic geometry of a surface is a prerequisite for any detailed understanding of the surface's electronic structure and chemical properties. Previous studies have convincingly demonstrated that density functional theory (DFT) yields accurate surface atomic geometries and that reliable predictions concerning stable and metastable phases can be made on the basis of the calculated energetics. In the present work we use DFT to investigate the atomic structure of four ordered coadsorbate phases of carbon monoxide and oxygen on Ru(0001). All of the structures have a (2x2) periodicity with differing concentrations of CO molecules and O atoms. For two of these phases dynamical low-energy electron diffraction (LEED) intensity analyses have been performed and the agreement between our DFT- and the LEED-determined structures is found to be very good. We predict the atomic geometry of the third phase for which no structural determination based on experiments has been made to date. We also predict the stability of a new ordered mixed phase.Comment: 6 pages, 1 figure, submitted to Israel Journal of Chemistry (June 29, 1998). Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

Theory of alkali metal adsorption on close-packed metal surfaces

Results of recent density functional theory calculations for alkali metal adsorbates on close-packed metal surfaces are discussed. Single adatoms on the (111) surface of Al and Cu are studied with the self-consistent surface Green-function method by which the pure adsorbate-substrate interaction may be analyzed. Higher coverage ordered adlayers of K on Al(111), Na on Al(111), and Na on Al(001) are treated using the ab-initio pseudopotential plane wave method which affords the prediction of coverage dependent stable and metastable adsorbate geometries and phase transitions of the adsorbate layers. Together, these studies give insight and understanding into current key issues in alkali metal adsorption, namely, the nature of the adsorbate-substrate bond at low coverage and the occurrence of hitherto unanticipated adsorbate geometries, and the associated electronic properties.Comment: to be published in Surface Reviews and Letters, 18 pages, 18 figure

Diffusivity of Ga and Al adatoms on GaAs(001)

The diffusivity of Ga and Al adatoms on the (2x4) reconstructed GaAs(001) surface are evaluated using detailed ab initio total energy calculations of the potential energy surface together with transition state theory. A strong diffusion anisotropy is found, with the direction of fastest diffusion being parallel to the surface As-dimer orientation. In contrast to previous calculations we identify a short--bridge position between the two As atoms of a surface dimer as the adsorption site for Al and Ga adatoms.Comment: 4 pages, 1 figures, to appear in "The Physics of Semiconductors

Study of CO Oxidation over Ru(0001) at High Gas Pressures

Experiments performed at high gas partial pressures have demonstrated that the kinetics of the CO oxidation reaction at Ru(0001) is different and somewhat anomalous compared to that over other transition metal surfaces and, in particular, the turnover rate is exceptionally high. In order to gain insight into the underlying reasons for this behavior, we performed density functional theory calculations using the generalized gradient approximation for the exchange-correlation functional. We find that the high rate is due to a weakly, but nevertheless well bound, (1x1) oxygen adsorbate layer which may form for high O_2 pressures but not under usual ultra high vacuum conditions. The calculations indicate that reaction to CO_2 occurs both via scattering of gas-phase CO molecules as well as by CO molecules weakly adsorbed at vacancies in the oxygen adlayer, where the latter mechanism dominates the rate.Comment: 13 pages, 4 figures. Surface Science, in press (submitted July 1996

Medicines and vaccines for the world's poorest: Is there any prospect for public-private cooperation?

This paper reviews the current status of the global pharmaceutical industry and its research and development focus in the context of the health care needs of the developing world. It will consider the attempts to improve access to critical drugs and vaccines, and increase the research effort directed at key public health priorities in the developing world. In particular, it will consider prospects for public-private collaboration. The challenges and opportunities in such public-private partnerships will be discussed briefly along with a look at factors that may be key to success. Much of the focus is on HIV/AIDS where the debate on the optimal balance between intellectual property rights (IPR) and human rights to life and health has been very public and emotive

Errors in Hellmann-Feynman Forces due to occupation number broadening, and how they can be corrected

In ab initio calculations of electronic structures, total energies, and forces, it is convenient and often even necessary to employ a broadening of the occupation numbers. If done carefully, this improves the accuracy of the calculated electron densities and total energies and stabilizes the convergence of the iterative approach towards self-consistency. However, such a boardening may lead to an error in the calculation of the forces. Accurate forces are needed for an efficient geometry optimization of polyatomic systems and for ab initio molecular dynamics (MD) calculations. The relevance of this error and possible ways to correct it will be discussed in this paper. The first approach is computationally very simple and in fact exact for small MD time steps. This is demonstrated for the example of the vibration of a carbon dimer and for the relaxation of the top layer of the (111)-surfaces of aluminium and platinum. The second, more general, scheme employs linear-response theory and is applied to the calculation of the surface relaxation of Al(111). We will show that the quadratic dependence of the forces on the broadening width enables an efficient extrapolation to the correct result. Finally the results of these correction methods will be compared to the forces obtained by using the smearing scheme, which has been proposed by Methfessel and Paxton.Comment: 6 pages, 5 figures, Scheduled tentatively for the issue of Phys. Rev. B 15 15 Dec 97 Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

Adatom Diffusion at GaN (0001) and (000bar1) Surfaces

The diffusion of Ga and N adatoms has been studied for the technologically relevant wurtzite (000bar1) and (0001) surfaces employing density-functional theory. Our calculations reveal a very different diffusivity for Ga and N adatoms on the equilibrium surfaces: While Ga is very mobile at typical growth temperatures, the diffusion of N is by orders of magnitudes slower. These results give a very detailed insight of how and under which growth conditions N adatoms can be stabilized and efficiently incorporated at the surface. We further find that the presence of excess N strongly increases the Ga diffusion barrier and discuss the consequences for the growth of GaN.Comment: 4 pages, 4 figures, Appears in Appl. Phys. Lett. Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

Effect of the cluster size in modeling the H_2 desorption and dissociative adsorption on Si(001)

Three different clusters, Si_9H_12, Si_15H_16, and Si_21H_20, are used in density-functional theory calculations in conjunction with ab initio pseudopotentials to study how the energetics of H_2 dissociativ e adsorption on and associative desorption from Si(001) depends on the cluster size. The results are compared to five-layer slab calculations using the same pseudopotentials and high qu ality plane-wave basis set. Several exchange-correlation functionals are employed. Our analysis suggests that the smaller clusters generally overestimate the activation barriers and reaction energy. The Si_21H_20 cluster, however, is found to predict reaction energetics, with E_{a}^{des}=56 +- 3 kcal/mol (2.4 +- 0.1 eV), reasonably close (though still different) to that obtained from the slab calculations. Differences in the calculated activation energies are discussed in relation to the efficiency of clusters to describe the properties of the clean Si(001)-2x1 surface.Comment: 10 pages, 6 figures, submitted to J. Chem. Phy

Density Functional Theory of Epitaxial Growth of Metals

This chapter starts with a summary of the atomistic processes that occur during epitaxy. We then introduce density functional theory (DFT) and describe its implementation into state-of-the-art computations of complex processes in condensed matter physics and materials science. In particular we discuss how DFT can be used to calculate parameters of microscopic processes such as adsorption and surface diffusion, and how they can be used to study the macroscopic time and length scales of realistic growth conditions. This meso- and macroscopic regime is described by the ab initio kinetic Monte Carlo approach. We discuss several specific theoretical studies that highlight the importance of the different diffusion mechanisms at step edges, the role of surfactants, and the influence of surface stress. The presented results are for specific materials (namely silver and aluminum), but they are explained in simple physical pictures suggesting that they also hold for other systems.Comment: 55 pages, 20 figures, to be published "Growth of Ultrathin Epitaxial Layers", The Chemical Physics of Soild Surfaces, Vol. 8, Eds D. A. King and D. P. Woodruff (Elsevier Science, Amsterdam, 1997