Effects of salicylic acid on wheat salt sensitivity

Salicylic acid (SA), a plant phenolic compound, is now considered as a hormone-like endogenous regulator, and there is a great interest to clarify its role in the defence mechanisms against biotic and abiotic stressors. In this study, investigations on the effects of foliar-applied SA on salt sensitivity, hydrogen peroxide (H2O2) generation and activities of antioxidant enzymes like peroxidase (POX) and catalase (CAT) in plant tissues under salt stress was performed. SA treatment significantly increased the fresh and dry weights in both root and shoots of wheat plants under salt stress. Similarly, POX and CAT activities were also augmented by SA treatment. While the highest POX activity was recorded at SA+120 mM NaCl, CAT activity also exhibited an increase compared to salt treatment without SA. In parallel to increasing antioxidative activity, SA treatment decreased H2O2 content when compared to plants growing under salt stress without SA. The results revealed that salt-induced deleterious effect in wheat seedlings were significantly alleviated by the SA treatment. SA can be used as a signal molecule to investigate plant defense to abiotic stress. After the application of SA, increasing tolerance of wheat seedlings to salt stress may be related to increases in antioxidative enzyme activitiy.Key words: Wheat, salicylic acid, antioxidative enzyme activities, peroxidase (POX), catalase (CAT), hydrogen peroxide (H2O2) content

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Cataloged from PDF version of article.Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction (XRD). Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800 degrees C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix. (c) 2006 American Institute of Physics

HESEB The Helmholtz state of the art Soft X Ray Undulator beamline at SESAME

SESAME and a consortium of five Helmholtz Centers are designing and installing a state of the art soft X Ray undulator beamline at the SESAME light source in Amman, Jordan. Funding is provided by the Helmholtz Association over a four year project cycle that started in January 2019. This is an interim report covering the first 36 months of the project where the construction and installation has been almost completed and commissioning and characterization of the beamline is about to start. Additionally, seminars, workshops, and a training program are part of the project aimed at establishing a broad user communit

Theoretical and spectroscopic investigations on the structure and bonding in B-C-N thin films

Cataloged from PDF version of article.In this study, we have synthesized boron, carbon, and nitrogen containing films using RF sputter deposition. We investigated the effects of deposition parameters on the chemical environment of boron, carbon, and nitrogen atoms inside the films. Techniques used for this purpose were grazing incidence reflectance-Fourier-transform infrared spectroscopy (GIR-FTIR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). GIR-FTIR experiments on the B-C-N films deposited indicated presence of multiple features in the 600 to 1700 cm(-1) range for the infrared (IR) spectra. Analysis of the IR spectra, XPS and the corresponding EELS data from the films has been done in a collective manner. The results from this study suggested even under nitrogen rich synthesis conditions carbon atoms in the B-C-N films prefer to be surrounded by other carbon atoms rather than boron and/or nitrogen. Furthermore, we have observed a similar behavior in the chemistry of B-C-N films deposited with increasing substrate bias conditions. In order to better understand these results, we have compared and evaluated the relative stability of various nearest-neighbor and structural configurations of carbon atoms in a single BN sheet using DFT calculations. These calculations also indicated that structures and configurations that increase the relative amount of C-C bonding with respect to B-C and/or C-N were energetically favorable than otherwise. As a conclusion, carbon tends to phase-segregate in to carbon clusters rather than displaying a homogeneous distribution for the films deposited in this study under the deposition conditions studied. (C) 2009 Elsevier B.V. All rights reserved

Formation of silicon nanocrystals in sapphire by ion implantation and the origin of visible photoluminescence

Silicon nanocrystals, average sizes ranging between 3 and 7 nm, were formed in sapphire matrix by ion implantation and subsequent annealing. Evolution of the nanocrystals was detected by Raman spectroscopy and x-ray diffraction ͑XRD͒. Raman spectra display that clusters in the matrix start to form nanocrystalline structures at annealing temperatures as low as 800°C in samples with high dose Si implantation. The onset temperature of crystallization increases with decreasing dose. Raman spectroscopy and XRD reveal gradual transformation of Si clusters into crystalline form. Visible photoluminescence band appears following implantation and its intensity increases with subsequent annealing process. While the center of the peak does not shift, the intensity of the peak decreases with increasing dose. The origin of the observed photoluminescence is discussed in terms of radiation induced defects in the sapphire matrix