High-quality highly strained InGaAs quantum wells grown on InP using (InAs)n(GaAs)0.25 fractional monolayer superlattices

International audience(InAs) n /(GaAs) m n1.5-2, m0.25 monolayer fractional monolayer superlattices FMS have been used to grow highly strained InGaAs quantum wells QWs on InP by molecular beam epitaxy. We show that FMS quantum wells have better structural and optoelectronic properties compared to equivalent QWs grown using standard procedures. In addition, the onsets of the three-dimensional growth mode and plastic relaxation are delayed, which allows the highest emission wavelength in the In x Ga 1x As/InGaAlAs/InP system to be extended up to 2.35 m at high growth temperatures 500 °C

Measurement of the extent of strain relief in InGaAs layers grown under tensile strain on InP(100) substrates

International audienceHigh resolution x‐ray diffraction has been used to investigate the structural properties of InxGa1−xAs epitaxial layers grown under tension on InP(100) substrates. The nominal indium composition (x=0.42) corresponds to a small lattice mismatch and a two dimensional growth mode. We have also included for comparison two samples grown under compression covering the mostly strained and the mostly relaxed regimes. Our results show that the residual strain and the asymmetry in strain relaxation along 〈011〉 directions are always larger for layers under tension. This can be explained by the difference in dislocation glide velocity induced by a different indium content, by the dissociation of perfect dislocations and partially by the difference in thermal expansion coefficients between substrate and epilayer. The larger asymmetry in strain relaxation for tensile strain layers is interpreted by the existence of microcracks aligned in the [011] direction

Strain, size and composition of InAs Quantum Sticks, embedded in InP, by means of Grazing Incidence X-ray Anomalous Diffraction

We have used x-ray anomalous diffraction to extract the x-ray structure factor of InAs quantum stick-like islands, embedded in InP. The average height of the quantum sticks (QSs), as deduced from the width of the structure factor profile is 2.54nm. The InAs out of plane deformation, relative to InP, is equal to 6.1%. Diffraction Anomalous Fine Structure provides a clear evidence of pure InAs QSs. Finite Difference Method calculations reproduce well the diffraction data, and give the strain along the growth direction. Chemical mixing at interfaces is at most of 1MLComment: 9 pages, 7 figures, submitte

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

International audienceThin and thick fully relaxed In 0.65 Ga 0.35 As layers have been grown on InP substrates 0.81% misfit, with high structural and high optoelectronic quality at an operating wavelength of 2.0 m. Full relaxation is achieved, using the paramorphic approach, by growing the In 0.65 Ga 0.35 As layers lattice matched to an InAs 0.25 P 0.75 seed membrane of predetermined lattice parameter. The InAs 0.25 P 0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining

Role of buffer surface morphology and alloying effects on the properties of InAs nanostructures grown on InP(001)

International audienceWe show the role played by the buffer surface morphology and by alloying effects on the size, shape and lateral distribution of InAs nanostructures grown on InP001 substrates by molecular beam epitaxy. Three buffers, viz., In 0.53 Ga 0.47 As, In 0.52 Al 0.48 As, and InP lattice matched on InP have been studied. Differences in nanostructure morphology and in carrier confinement have been evaluated by atomic force microscopy and by low-temperature photoluminescence measurements, respectively. Alongside the classical relaxation mode through two-dimensional/three-dimensional surface morphology change, a chemical relaxation mode has to be introduced as a competitive mode of relaxation of strained layers. This chemical relaxation mode, due to alloying between the InAs deposit and the buffer, is thought to be responsible for most of the observed differences in the InAs nanostructure properties

Elliptical body fossils from the Fortunian (Early Cambrian) of Normandy (NW France)

Body fossils have been discovered in the Fortunian deposits of the Rozel Cape, in Normandy (NW France). The material consists of about 80 specimens preserved on a shale surface, recently observed at the base of a cliff at the Cap Rozel, in the Cotentin region. The fossils, centimetric in size, have an elliptical outline, with a peripheral bulge, generally without other conspicuous ornamentation, but showing sometimes concentric or radial lines possibly of taphonomic origins. In addition, these body fossils are preserved parallel to the bedding plane, locally rich in horizontal trace fossils (e.g. Archaeonassa Fenton & Fenton, 1937, Helminthoidichnites Fitch, 1850, Helminthopsis Heer, 1877) and also complex treptichinids burrows (e.g. Treptichnus pedum (Seilacher, 1955)) sometimes associated with microbial mats. The sedimentological characteristics of these deposits (ripple marks, syneresis cracks) correspond to a shallow marine shelf environment, with a variable hydrodynamism in the intertidal zone, low for surfaces showing elliptic fossils and syneresis cracks, higher for surfaces with ripple marks. These new discoveries unravel the potential of the Fortunian strata from Normandy and provide new information about the early Cambrian biocenoses

Mechanical relaxation of strained semiconducting stripes: Influence on optoelectronic properties

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Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering

International audienceRaman scattering has been used to estimate the critical layer thickness and to analyze the alloying effect on strain relaxation in InxGa1−xAs layers grown by molecular beam epitaxy on InP [001]-oriented substrate, for x ranging from 0.0 to 1.0. Measurements of longitudinal optical GaAs-like phonon frequency and Raman linewidth showed that the indium/gallium ratio contents greatly influences the strain relaxation. A comparison between Raman and x-ray diffraction measurements of relaxation ratios as a function of layer thickness is presented. The results can be explained in terms of the combined effect of strain and chemical and structural disorder

Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 μm using cavity-confined slow light

We have designed, fabricated, and characterized an InP photonic crystal slab structure that supports a cavity-confined slow-light mode, i.e. a bandgap-confined valence band-edge mode. Three dimensional finite difference in time domain calculations predict that this type of structure can support electromagnetic modes with large quality factors and small mode volumes. Moreover these modes are robust with respect to fabrication imperfections. In this paper, we demonstrate room-temperature laser operation at 1,5 μm of a cavity-confined slow-light mode under pulsed excitation. The gain medium is a single layer of InAs/lnP quantum dots. An effective peak pump power threshold of 80 μW is reported. © 2009 Optical Society of America