Nongalvanic thermometry for ultracold two-dimensional electron domains

Measuring the temperature of a two-dimensional electron gas at temperatures of a few mK is a challenging issue, which standard thermometry schemes may fail to tackle. We propose and analyze a nongalvanic thermometer, based on a quantum point contact and quantum dot, which delivers virtually no power to the electron system to be measured.Comment: 5 pages, 3 figure

LATE FROST EVENTS IN AN ALPINE VALLEY: MEASUREMENTS AND CHARACTERISATION OF THE PROCESS

Under the research project GEPRI, aimed at investigating and characterizing late frost events potentiallydangerous for cultivated areas, in the spring of 2004 an intensive meteorological field experiment has been made in the Adige River Valley in Trentino (Northern Italy). The project is aimed at a better characterization of the mechanism of late frost events in complex topography in order to improve the forecast of the occurrence of nocturnal temperature minima. In this work some preliminary results of the micrometeorological measurements performed at a target area within an appletrees orchard are presented and discussed. Measurements allowed the determination of the complete energy balance, as well as the identification of specific local-scale circulations which appear to be relevant in characterizing the night-time cooling process. In case of fair weather conditions, the latter displays a sequence of at least four different phases which seem to alternate rather than superimpose advective- and radiative-effects

The Kondo Effect in the Unitary Limit

We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit value. We compare the experimental Kondo temperature with the theoretical predictions for the spin-1/2 Anderson impurity model. Excellent agreement is found throughout the Kondo regime. Phase coherence is preserved when a Kondo quantum dot is included in one of the arms of an Aharonov-Bohm ring structure and the phase behavior differs from previous results on a non-Kondo dot.Comment: 10 page

Single-electron tunneling in InP nanowires

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55 nm range and lengths of several microns. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 micron. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ~1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.Comment: 4 pages, 3 figure

A Non-equilibrium STM model for Kondo Resonance on surface

Based on a no-equilibrium STM model, we study Kondo resonance on a surface by self-consistent calculations. The shapes of tunneling spectra are dependent on the energy range of tunneling electrons. Our results show that both energy-cutoff and energy-window of tunneling electrons have significant influence on the shapes of tunneling spectra. If no energy-cutoff is used, the Kondo resonances in tunneling spectrum are peaks with the same shapes in the density of state of absorbed magnetic atoms. This is just the prediction of Tersoff theory. If we use an energy cutoff to remove high-energy lectrons, a dip structure will modulate the Kondo resonance peak in the tunneling spectrum. The real shape of Kondo peak is the mixing of the peak and dip, the so-called Fano line shape. The method of self-consistent non-equilibrium matrix Green function is discussed in details.Comment: 11 pages and 8 eps figur

A CMOS silicon spin qubit

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform.Comment: 12 pages, 4 figure