Editorial

Editoria

Radiological protection in the Spanish nuclear industry under Franco, 1939-1975

Este trabajo es una reelaboración del capítulo de la memoria de doctorado de Sánchez Vázquez, 2010, p.189-215, dedicado a la protección radiológica.En los debates sobre la controversia nuclear pocas veces se presenta en primera plana la cuestión de la seguridad laboral en las instalaciones radiactivas. Históricamente se ha priorizado la atención a los potenciales daños a la población general frente a la propia seguridad de los trabajadores empleados en instalaciones de riesgo. Con objeto de cubrir parcialmente ese vacío historiográfico, este trabajo pretende llevar a cabo un acercamiento al desarrollo de la protección radiológica laboral en España durante la dictadura del general Franco (1939-1975). Para ello repasaremos el surgimiento de las medidas de protección radiológica en el ámbito internacional y el posterior desarrollo legislativo en el caso español, proceso que fue paralelo al crecimiento del programa nuclear nacional. Para finalizar, exploraremos las principales evidencias del impacto de las radiaciones ionizantes sobre la población laboral españolaIn debates about nuclear controversy, the issue of occupational safety in radioactive facilities is rarely foregrounded; it has historically been relegated to second place compared to the attention given to potential harm to the general population. Aiming for, al least, partially filling this historiographical gap, this article deals with the development of occupational radiological protection in Spain under the dictatorship of General Franco (1939-1975). It covers the rise of radiological protection measures on an international level and the subsequent development of legislation in the case of Spain, a process that paralleled the growth of the nation’s nuclear program. Finally, it explores the main evidence of the impact of ionizing radiation on Spain’s working population

VLSI implementation of a transconductance mode continuous BAM with on chip learning and dynamic analog memory

In this paper we present a complete VLSI Continuous-Time Bidirectional Associative Memory (BAM). The short term memory (STM) section is implemented using small transconductance four quadrant multipliers, and capacitors for the integrators. The long term memory (LTM) is built using an additional multiplier that uses locally available signals to perform Hebbian learning. The value of the learned weight is present at a capacitor for each synapse. After learning has been accomplished the value of the stored weight voltage can be refreshed using a simple AID-D/A conversion, which if done fast enough, will maintain the weight value within a discrete interval of the complete weight range. Such a discretization still allows good performance of the STM section after learning is finished

Analog integrated neural-like circuits for nonlinear programming

A systematic approach for the design of analog neural nonlinear programming solvers using switched-capacitor (SC) integrated circuit techniques is presented. The method is based on formulating a dynamic gradient system whose state evolves in time towards the solution point of the corresponding programming problem. A neuron cell for the linear and the quadratic problem suitable for monolithic implementation is introduced. The design of this neuron and its corresponding synapses using SC techniques is considered in detail. An SC circuit architecture based on a reduced set of basic building blocks with high modularity is presented. Simulation results using a mixed-mode simulator (DIANA) and experimental results from breadboard prototypes are included, illustrating the validity of the proposed technique

Analog Neural Programmable Optimizers in CMOS VLSI Technologies

A 3-μm CMOS IC is presented demonstrating the concept of an analog neural system for constrained optimization. A serial time-multiplexed general-purpose architecture is introduced for the real-time solution of this kind of problem in MOS VLSI. This architecture is a fully programmable and reconfigurable one exploiting SC techniques for the analog part and making extensive use of digital techniques for programmability

On the Design of Voltage-Controlled Sinusoidal Oscillators Using OTA's

A unified systematic approach to the design of voltage-controlled oscillators using only operational transconductance amplifiers (OTA's) and capacitors is discussed in this paper. Two classical oscillator models, i.e., quadrature and bandpass-based, are employed to generate several oscillator structures. They are very appropriate for silicon monolithic implementations. The resulting oscillation frequencies are proportional to the transconductance of the OTA and this makes the reported structures well-suited for building voltage controlled oscillators (VCO's). Amplitude stabilization circuits using both automatic gain control (AGC) mechanisms and limitation schemes are presented which are compatible with the transconductance amplifier capacitor oscillator (TACO). Experimental results from bipolar breadboard and CMOS IC prototypes are included showing good potential of OTA-based oscillators for high frequency VCO operation.Comisión Interministerial de Ciencia y Tecnología ME87-000

CMOS OTA-C high-frequency sinusoidal oscillators

Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities. Building blocks are presented for amplitude control, both by automatic gain control (AGC) schemes and by limitation schemes. Experimental results from 3- and 2- mu m CMOS (MOSIS) prototypes that exhibit oscillation frequencies of up to 69 MHz are obtained. The amplitudes can be adjusted between 1 V peak to peak and 100 mV peak to peak. Total harmonic distortions from 2.8% down to 0.2% have been measured experimentally.Comisión Interministerial de Ciencia y Tecnología ME87-000

Frequency tuning loop for VCOs

A frequency tuning circuit is introduced for VCOs (voltage-controlled oscillators) so that the final relationship between oscillating frequency and input control voltage is fixed and independent of nonidealities. This tuning loop is applied to an OTA-C sinusoidal VCO. Such an oscillator has an output frequency-input voltage relationship that depends on temperature, process parameters, and even amplitude of the oscillations. It is shown that, by adding the tuning loop, nonideal dependences will be minimized