The Electromigration Force in Metallic Bulk

The voltage induced driving force on a migrating atom in a metallic system is discussed in the perspective of the Hellmann-Feynman force concept, local screening concepts and the linear-response approach. Since the force operator is well defined in quantum mechanics it appears to be only confusing to refer to the Hellmann-Feynman theorem in the context of electromigration. Local screening concepts are shown to be mainly of historical value. The physics involved is completely represented in ab initio local density treatments of dilute alloys and the implementation does not require additional precautions about screening, being typical for jellium treatments. The linear-response approach is shown to be a reliable guide in deciding about the two contributions to the driving force, the direct force and the wind force. Results are given for the wind valence for electromigration in a number of FCC and BCC metals, calculated using an {\it ab initio} KKR-Green's function description of a dilute alloy.Comment: 14 pages, 1 Postscript figur

‘Giant’ magnetoresistance in obliquely co-evaporated Co-Ag films

Magnetoresistance (MR) measurements at room temperature have been performed on obliquely (co-) evaporated Ag-Co films deposited at room- and elevated-temperatures. The ‘giant’ magnetoresistance ratio (max. 13% for a composition of about Co35Ag65) over a wide range of compositions has been measured. The films are polycrystalline and grown in a columnar morphology. The columnar diameter depends on the thickness and is < 20 nm at 400 nm thickness. From XRD, NMR and saturation magnetization (Ms) vs. at% Ag, one can conclude that the films consist of Co-Co and Ag-Ag clusters. The coercivity depends on the thickness of the films (100–700 nm) and varies from 5 to 15 kA/m

Resistivity due to low-symmetrical defects in metals

The impurity resistivity, also known as the residual resistivity, is calculated ab initio using multiple-scattering theory. The mean-free path is calculated by solving the Boltzmann equation iteratively. The resistivity due to low-symmetrical defects, such as an impurity-vacancy pair, is calculated for the FCC host metals Al and Ag and the BCC transition metal V. Commonly, 1/f noise is attributed to the motion of such defects in a diffusion process.Comment: 24 pages in REVTEX-preprint format, 10 Postscript figures. Phys. Rev. B, vol. 57 (1998), accepted for publicatio

Giant magnetoresistance in Co/Cu multilayers sputtered with Kr

This paper presents some results of magnetoresistance measurements on Kr-sputter-deposited Co/Cu multilayers. We find that Co/Cu MLs sputtered with Kr gas show a larger GMR effect than those sputtered with Ar gas

Theory for the electromigration wind force in dilute alloys

A multiple scattering formulation for the electromigration wind force on atoms in dilute alloys is developed. The theory describes electromigration via a vacancy mechanism. The method is used to calculate the wind valence for electromigration in various host metals having a close-packed lattice structure, namely aluminum, the noble metals copper, silver and gold and the $4d$ transition metals. The self-electromigration results for aluminum and the noble metals compare well with experimental data. For the $4d$ metals small wind valences are found, which make these metals attractive candidates for the experimental study of the direct valence.Comment: 18 pages LaTeX, epsfig, 8 figures. to appear in Phys. Rev. B 56 of 15/11/199

Domain wall theory and exchange stiffness in Co/Pd multilayers

The stripe model of domain structure in multilayers is studied by micromagnetic simulation. The results indicate a strong reduction of the effective domain wall energy (by dipolar effects). Domain width measurements on sputtered Co/Pd multilayers are compared with the theory. The estimated exchange stiffness is comparable with that of bulk Co. The effects of interface roughness and of interlayer exchange are discussed

Neutron reflectometry on Co-Cr layers

Polarized neutron reflection experiments were performed on a thin in-plane magnetized Co-Cr layer deposited on a quartz substrate. Data taken at a low magnetic field ( 0.1 T) clearly indicate the existence of an initial layer at the substrate side, whereas data at saturation ( 0.7 T) are consistent with a rather homogeneous magnetization

Loneliness Across the Life Span

Most people have experienced loneliness and have been able to overcome it to reconnect with other people. In the current review, we provide a life-span perspective on one component of the evolutionary theory of loneliness—a component we refer to as the reaffiliation motive (RAM). The RAM represents the motivation to reconnect with others that is triggered by perceived social isolation. Loneliness is often a transient experience because the RAM leads to reconnection, but sometimes this motivation can fail, leading to prolonged loneliness. We review evidence of how aspects of the RAM change across development and how these aspects can fail for different reasons across the life span. We conclude with a discussion of age-appropriate interventions that may help to alleviate prolonged lonelines

Calculation of the electromigration wind force in Al alloys

The electromigration wind force in various Al alloys is calculated using a Green’s-function method for the calculation of the electronic structure. The influence of the environment of the jumping atoms is studied in detail in the Al-Cu alloy. Alloys of Al with (Formula presented) and (Formula presented) alloying elements are studied systematically in order to investigate the relation between the electronic states of the alloying atom and the wind force. The study also includes several other alloys, which have been used in the past in attempts to increase electromigration lifetime. It is shown that the wind force on an Al host atom can be changed considerably by the presence of an alloying atom at particular positions near the jump path. This could be an additional contribution to the well-known decelerating effect of some alloying elements on electromigration in Al

Andreev Bound States and Self-Consistent Gap Functions for SNS and SNSNS Systems

Andreev bound states in clean, ballistic SNS and SNSNS junctions are calculated exactly and by using the Andreev approximation (AA). The AA appears to break down for junctions with transverse dimensions chosen such that the motion in the longitudinal direction is very slow. The doubly degenerate states typical for the traveling waves found in the AA are replaced by two standing waves in the exact treatment and the degeneracy is lifted. A multiple-scattering Green's function formalism is used, from which the states are found through the local density of states. The scattering by the interfaces in any layered system of ballistic normal metals and clean superconducting materials is taken into account exactly. The formalism allows, in addition, for a self-consistent determination of the gap function. In the numerical calculations the pairing coupling constant for aluminum is used. Various features of the proximity effect are shown