The electrical properties of 60 keV zinc ions implanted into semi-insulating gallium arsenide

The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect. Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV. The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique. The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature. Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements

Adiabatic motion of a neutral spinning particle in an inhomogeneous magnetic field

The motion of a neutral particle with a magnetic moment in an inhomogeneous magnetic field is considered. This situation, occurring, for example, in a Stern-Gerlach experiment, is investigated from classical and semiclassical points of view. It is assumed that the magnetic field is strong or slowly varying in space, i.e., that adiabatic conditions hold. To the classical model, a systematic Lie-transform perturbation technique is applied up to second order in the adiabatic-expansion parameter. The averaged classical Hamiltonian contains not only terms representing fictitious electric and magnetic fields but also an additional velocity-dependent potential. The Hamiltonian of the quantum-mechanical system is diagonalized by means of a systematic WKB analysis for coupled wave equations up to second order in the adiabaticity parameter, which is coupled to Planck’s constant. An exact term-by-term correspondence with the averaged classical Hamiltonian is established, thus confirming the relevance of the additional velocity-dependent second-order contribution

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon

The piezoresistive effect in electron irradiated silicon and its application to the improvement of semiconductor strain gages

Piezoresistive effect in electron irradiated silicon and application to improved semiconductor strain gage

Quantum Charged Spinning Particles in a Strong Magnetic Field (a Quantal Guiding Center Theory)

A quantal guiding center theory allowing to systematically study the separation of the different time scale behaviours of a quantum charged spinning particle moving in an external inhomogeneous magnetic filed is presented. A suitable set of operators adapting to the canonical structure of the problem and generalizing the kinematical momenta and guiding center operators of a particle coupled to a homogenous magnetic filed is constructed. The Pauli Hamiltonian rewrites in this way as a power series in the magnetic length $l_B= \sqrt{\hbar c/eB}$ making the problem amenable to a perturbative analysis. The first two terms of the series are explicitly constructed. The effective adiabatic dynamics turns to be in coupling with a gauge filed and a scalar potential. The mechanism producing such magnetic-induced geometric-magnetism is investigated in some detail.Comment: LaTeX (epsfig macros), 27 pages, 2 figures include

Influence of CO60 gamma irradiation on the bulk and surface recombination rates in silicon

Influence of cobalt 60 gamma irradiation on bulk and surface recombination rates in n-type and p-type semiconductor

Spectrometric study of condensed phase species of thorium and palladium-based modifiers in a complex matrix for electrothermal atomic absorption spectrometry

The chemical and morphological transformations of condensed phase species of a thorium-based modifier were studied over the temperature range 200–2500 °C, without and with the presence of aluminium and silicon as matrix components, and in some instances, arsenic as an analyte element. A similar study was also conducted with palladium as the modifier, for comparison. Results were derived using scanning electron microscopy (SEM), energy dispersive (ED) X-ray spectrometry, Raman microanalysis and attenuated total reflectance (ATR) Fourier transform-infrared (FT-IR) spectrometry. Comparable results were found using pyrolytic and non-pyrolytic graphite platforms, with processes occurring at slightly higher temperatures on the pyrolytic graphite platform. With thorium as the modifier, metal oxides were the predominant species on the platform surface at relatively low temperatures (<1500 °C), whereas metal phases became prevalent at high temperatures, when thorium and aluminium tended to behave independently from one other. Some spatial variations in the composition of the salt residues on different regions of the platform were observed (from the region closest to the slot in the tube, to the region furthest from the slot). Nonetheless, thorium metal remained on the graphite platform to higher temperatures than did aluminium metal. In the presence of arsenic, the existence of mixtures of thorium and arsenic oxides, just before the appearance temperature of gas phase arsenic atoms, was confirmed by SEM studies, ED X-ray spectra and Raman microanalysis. This suggests that any modifying effect of thorium on arsenic occurs while the modifier is in the oxide phase rather than in the metal phase. The presence of silicon added as silica, did not influence significantly the thermochemical behaviour of mixtures of thorium and aluminium. However, coexistence of silicon and arsenic oxides at the appearance temperature of the atomic absorption signal of arsenic was obtained, confirming that silicon can act as an internal modifier for arsenic. In the presence of palladium, aluminium exhibited greater interaction with the modifier; consequently, aluminium metal was retained on the platform surface to higher temperatures than thorium, which could explain how interference effects of aluminium on e.g. arsenic are avoided or reduced. Similarly, there was evidence for interaction of palladium and arsenic in the reduced state. However, when aluminium and silicon were present, the transformation of the palladium oxide to the metallic state was affected, which could diminish the modifying benefits of palladium for arsenic in the presence of aluminium

You make yourself entirely available”: Emotional Labour in a caring approach to teaching

This study examines the challenges experienced, and the pedagogy adopted, by university teachers as they transferred their teaching online during the Covid-19 pandemic. Thematic analysis of survey and interview data show that teachers engaged regularly in emotional support of students, and a pedagogy of care was discernible in the ways teachers described seeking out signals that the students’ needs were being met online. However, technology mediated communication made this more difficult in online teaching than face-to-face, increasing teachers’ emotional labour. Teachers’ efforts to achieve interaction with, and feedback from, students to inform their teaching approach, incurred a heavy burden of emotional labour that is insufficiently recognised or rewarded. This study has implications for the debate around the justification of equivalent fees for online teaching, since it reveals more emotional labour is involved. Universities risk burnout of experienced educators unless the emotional labour in online teaching is acknowledged and supported. Moreover, since emotional labour is often borne by the least privileged sections of the university workforce, this study uncovers uncomfortable questions about the persistence of systemic problems causing staff inequalities that cannot afford to be ignored

Uniform Approximation from Symbol Calculus on a Spherical Phase Space

We use symbol correspondence and quantum normal form theory to develop a more general method for finding uniform asymptotic approximations. We then apply this method to derive a result we announced in an earlier paper, namely, the uniform approximation of the $6j$-symbol in terms of the rotation matrices. The derivation is based on the Stratonovich-Weyl symbol correspondence between matrix operators and functions on a spherical phase space. The resulting approximation depends on a canonical, or area preserving, map between two pairs of intersecting level sets on the spherical phase space.Comment: 18 pages, 5 figure