Laterally stacked Schottky diodes for infrared sensor applications

Laterally stacked Schottky diodes for infrared sensor applications are fabricated utilizing porous silicon having pores. A Schottky metal contract is formed in the pores, such as by electroplating. The sensors may be integrated with silicon circuits on the same chip with a high quantum efficiency, which is ideal for IR focal plane array applications due to uniformity and reproducibility

Fabrication of nanometer single crystal metallic CoSi2 structures on Si

Amorphous Co:Si (1:2 ratio) films are electron gun-evaporated on clean Si(111), such as in a molecular beam epitaxy system. These layers are then crystallized selectively with a focused electron beam to form very small crystalline Co/Si2 regions in an amorphous matrix. Finally, the amorphous regions are etched away selectively using plasma or chemical techniques

Long-wavelength PTSI infrared detectors and method of fabrication thereof

Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The extended cutoff wavelengths resulted from the combined effects of an increased electric field near the silicide/Si interface due to the p+ doping spike and the Schottky image force. The p+ doping spikes were grown by molecular beam epitaxy at 450 degrees Celsius using elemental boron as the dopant source, with doping concentrations ranging from 1.times.10.sup.19 to 1.times.10.sup.21 cm.sup.-3. The cutoff wavelengths were shown to increase with increasing doping concentrations of the p+ spikes

15-micro-m 128 x 128 GaAs/Al(x)Ga(1-x) As Quantum Well Infrared Photodetector Focal Plane Array Camera

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved