15-micro-m 128 x 128 GaAs/Al(x)Ga(1-x) As Quantum Well Infrared Photodetector Focal Plane Array Camera

Abstract

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved