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    Induced junction solar cell and method of fabrication

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    An induced junction solar cell is fabricated on a p-type silicon substrate by first diffusing a grid of criss-crossed current collecting n+ stripes and thermally growing a thin SiO2 film, and then, using silicon-rich chemical vapor deposition (CVD), producing a layer of SiO2 having inherent defects, such as silicon interstices, which function as deep traps for spontaneous positive charges. Ion implantation increases the stable positive charge distribution for a greater inversion layer in the p-type silicon near the surface. After etching through the oxide to parallel collecting stripes, a pattern of metal is produced consisting of a set of contact stripes over the exposed collecting stripes and a diamond shaped pattern which functions as a current collection bus. Then the reverse side is metallized

    Effects of current on vortex and transverse domain walls

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    By using the spin torque model in ferromagnets, we compare the response of vortex and transverse walls to the electrical current. For a defect-free sample and a small applied current, the steady state wall mobility is independent of the wall structure. In the presence of defects, the minimum current required to overcome the wall pinning potential is much smaller for the vortex wall than for the transverse wall. During the wall motion, the vortex wall tends to transform to the transverse wall. We construct a phase diagram for the wall mobility and the wall transformation driven by the current
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