Enriched aluminide coatings for dispersion strengthened nickel materials

Improved aluminide/barrier coating combinations for dispersion strengthened nickel materials were investigated. The barrier materials involved alloys with refractory metal content to limit interdiffusion between the coating and the substrate, thereby minimizing void formation. Improved aluminide coatings involved the dispersion of aluminum-rich compounds. Coatings were tested in argon at 1533 K (2300 F) for 100 hours and in cyclic oxidation at 1422 K (2100 F). Two coatings on TDNiCr completed 300 hours of oxidation testing, none on TDNi. Selected coating combinations were evaluated in Mach 1 burner rig testing using JP-4 fuel and air at 1422 K (2100 F) and 1477 K (2200 F) for 350 and 100 hours, respectively. Static oxidation in 1-hour cycles was conducted at 1533 K (2300 F) for 100 hours. For comparison purposes a physical vapor deposition (PVD) NiCrAlY coating was tested concurrently. Only the NiCrA1Y coating survived the 1477 K (2200 F)/100-hour burner rig test and 275 hours of the 350-hour 1422 K (2100 F) test. Elevated temperature exposure reduced room temperature tensile properties but had little effect on elevated temperature properties

Critical Strain Region Evaluation of Self-Assembled Semiconductor Quantum Dots

A novel peak finding method to map the strain from high resolution transmission electron micrographs, known as the Peak Pairs method, has been applied to In(Ga) As/AlGaAs quantum dot (QD) samples, which present stacking faults emerging from the QD edges. Moreover, strain distribution has been simulated by the finite element method applying the elastic theory on a 3D QD model. The agreement existing between determined and simulated strain values reveals that these techniques are consistent enough to qualitatively characterize the strain distribution of nanostructured materials. The correct application of both methods allows the localization of critical strain zones in semiconductor QDs, predicting the nucleation of defects, and being a very useful tool for the design of semiconductor device

Model for Anisotropic Directed Percolation

We propose a simulation model to study the properties of directed percolation in two-dimensional (2D) anisotropic random media. The degree of anisotropy in the model is given by the ratio $\mu$ between the axes of a semi-ellipse enclosing the bonds that promote percolation in one direction. At percolation, this simple model shows that the average number of bonds per site in 2D is an invariant equal to 2.8 independently of $\mu$. This result suggests that Sinai's theorem proposed originally for isotropic percolation is also valid for anisotropic directed percolation problems. The new invariant also yields a constant fractal dimension $D_{f} \sim 1.71$ for all $\mu$, which is the same value found in isotropic directed percolation (i.e., $\mu = 1$).Comment: RevTeX, 9 pages, 3 figures. To appear in Phys.Rev.

Theory of superfast fronts of impact ionization in semiconductor structures

We present an analytical theory for impact ionization fronts in reversely biased p^{+}-n-n^{+} structures. The front propagates into a depleted n base with a velocity that exceeds the saturated drift velocity. The front passage generates a dense electron-hole plasma and in this way switches the structure from low to high conductivity. For a planar front we determine the concentration of the generated plasma, the maximum electric field, the front width and the voltage over the n base as functions of front velocity and doping of the n base. Theory takes into account that drift velocities and impact ionization coefficients differ between electrons and holes, and it makes quantitative predictions for any semiconductor material possible.Comment: 18 pagers, 10 figure

Influence of Annealing on the Optical and Scintillation Properties of CaWO4_4 Single Crystals

We investigate the influence of oxygen annealing on the room temperature optical and scintillation properties of CaWO$_4$ single crystals that are being produced for direct Dark Matter search experiments. The applied annealing procedure reduces the absorption coefficient at the peak position of the scintillation spectrum ($\sim430$ nm) by a factor of $\sim6$ and leads to an even larger reduction of the scattering coefficient. Furthermore, the annealing has no significant influence on the \emph{intrinsic} light yield. An additional absorption occurring at $\sim400$ nm suggests the formation of O$^-$ hole centers. Light-yield measurements at room temperature where one crystal surface was mechanically roughened showed an increase of the \emph{measured} light yield by $\sim40$ and an improvement of the energy resolution at 59.5 keV by $\sim12$ for the annealed crystal. We ascribe this result to the reduction of the absorption coefficient while the surface roughening is needed to compensate for the also observed reduction of the scattering coefficient after annealing

Scanning-probe spectroscopy of semiconductor donor molecules

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum structure of small numbers of dopant atoms in semiconductors[1-3]. Although dopant properties are well-understood with respect to bulk semiconductors, new questions arise in nanosystems. For example, the quantum energy levels of dopants will be affected by the proximity of nanometer-scale electrodes. Moreover, because shallow donors and acceptors are analogous to hydrogen atoms, experiments on small numbers of dopants have the potential to be a testing ground for fundamental questions of atomic and molecular physics, such as the maximum negative ionization of a molecule with a given number of positive ions[4,5]. Electron tunneling spectroscopy through isolated dopants has been observed in transport studies[6,7]. In addition, Geim and coworkers identified resonances due to two closely spaced donors, effectively forming donor molecules[8]. Here we present capacitance spectroscopy measurements of silicon donors in a gallium-arsenide heterostructure using a scanning probe technique[9,10]. In contrast to the work of Geim et al., our data show discernible peaks attributed to successive electrons entering the molecules. Hence this work represents the first addition spectrum measurement of dopant molecules. More generally, to the best of our knowledge, this study is the first example of single-electron capacitance spectroscopy performed directly with a scanning probe tip[9].Comment: In press, Nature Physics. Original manuscript posted here; 16 pages, 3 figures, 5 supplementary figure

S 38093, a histamine H3 antagonist/inverse agonist, promotes hippocampal neurogenesis and improves context discrimination task in aged mice

Strategies designed to increase adult hippocampal neurogenesis (AHN) may have therapeutic potential for reversing memory impairments. H3 receptor antagonists/inverse agonists also may be useful for treating cognitive deficits. However, it remains unclear whether these ligands have effects on AHN. The present study aimed to investigate the effects of a 28-day treatment with S 38093, a novel brain-penetrant antagonist/inverse agonist of H3 receptors, on AHN (proliferation, maturation and survival) in 3-month-old and in aged 16-month-old mice. In addition, the effects of S 38093 treatment on 7-month-old APPSWE Tg2576 transgenic mice, a model of Alzheimer’s disease, were also assessed. In all tested models, chronic treatment with S 38093 stimulated all steps of AHN. In aged animals, S 38093 induced a reversal of age-dependent effects on hippocampal brain-derived neurotrophic factor (BDNF) BDNF-IX, BDNF-IV and BDNF-I transcripts and increased vascular endothelial growth factor (VEGF) expression. Finally, the effects of chronic administration of S 38093 were assessed on a neurogenesis-dependent “context discrimination (CS) test” in aged mice. While ageing altered mouse CS, chronic S 38093 treatment significantly improved CS. Taken together, these results provide evidence that chronic S 38093 treatment increases adult hippocampal neurogenesis and may provide an innovative strategy to improve age-associated cognitive deficits

On the Chemical Origin of the Gap Bowing in (GaAs)1−xGe2x Alloys: A Combined DFT–QSGW Study

Motivated by the research and analysis of new materials for photovoltaics and by the possibility of tailoring their optical properties for improved solar energy conversion, we have focused our attention on the (GaAs)1−xGe2x series of alloys. We have investigated the structural properties of some (GaAs)1−xGe2x compounds within the local-density approximation to density-functional theory, and their optical properties within the Quasiparticle Self-consistent GW approximation. The QSGW results confirm the experimental evidence of asymmetric bandgap bowing. It is explained in terms of violations of the octet rule, as well as in terms of the order–disorder phase transition