17 research outputs found

    Recent Advances in TiO2 Nanotube-Based Materials for Photocatalytic Applications Designed by Anodic Oxidation

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    This book chapter reports some spectacular and interesting 1D nanostructures of TiO2, which are grown by the anodic oxidation. Under suitable conditions, conventional one-step anodic oxidation is available to grow TiO2 nanotube arrays (TNAs) and TiO2 nanowires/nanotubes; meanwhile, two-step anodic oxidation allows fabricating some novel TNAs with spectacular morphologies such as highly ordered TNAs, bamboo-type TNAs, and lotus root-shaped TNAs. The formation mechanisms of these nanostructures during the anodic oxidation processes are elusive via studying effects of several key parameters such as oxidizing voltage, processing time, and electrolytes. In addition, the photocatalytic activity of the TNA-based nanomaterials is characterized by the degradation of pharmaceutical model, methylene blue, or the photoelectrochemical effect

    Low-k SiCxNy Etch-Stop/Diffusion Barrier Films for Back-End Interconnect Applications

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    Lower k and low-leakage silicon carbonitride (SiCxNy ) films were fabricated using single precursor by using radio-frequency (RF) plasma-enhanced chemical vapor deposition (PECVD). We explored precursors with (1) cyclic-carbon-containing structures, (2) higher C/Si ratio, (3) multiple vinyl groups, as well as (4) the incorporation of porogen for developing low-k SiCxNy films as etch-stop/diffusion barrier (ES/DB) layer for copper interconnects in this study. SiCxNy films with k values between 3.0 and 3.5 were fabricated at T≦ 200 o C, and k~4.0-4.5 at 300-400 °C. Precursors with vinyl groups yielded SiCxNy films with low leakage, excellent optical transmittance and high mechanical strength due to the formation of cross-linked Si-(CH2)n-Si linkages

    Stress Relaxation and Grain Growth Behaviors of (111)-Preferred Nanotwinned Copper during Annealing

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    Highly (111)-oriented nanotwinned Cu (nt-Cu) films were fabricated on silicon wafers for thermal-stress characterization. We tailored the microstructural features (grain scale and orientation) of the films by tuning the electroplating parameters. The films were heat-treated and the relaxation behaviors of thermal stresses in the films were explored using a bending beam system. Focused ion beam (FIB) and electron back-scattered diffraction (EBSD) were then employed to characterize the transformations of the microstructure, grain size, and orientation degree of the films. The results indicated that the degree of (111)-preferred orientation and grain size significantly decrease with increasing the current density. The nt-Cu films with a higher degree of (111)-preferred orientation and larger grains exhibit the slower rates of stress relaxation. The film with larger grains possesses a smaller grain boundary area; thus, the grain boundary diffusion for the thermal-stress release is suppressed. In addition, the induced tensile stress in the films with larger grains is smaller leading to the difference in microstructural changes under annealing

    Enhanced Photocatalytic Performance of Nitrogen-Doped TiO<sub>2</sub> Nanotube Arrays Using a Simple Annealing Process

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    Nitrogen-doped TiO2 nanotube arrays (N-TNAs) were successfully fabricated by a simple thermal annealing process in ambient N2 gas at 450 °C for 3 h. TNAs with modified morphologies were prepared by a two-step anodization using an aqueous NH4F/ethylene glycol solution. The N-doping concentration (0–9.47 at %) can be varied by controlling N2 gas flow rates between 0 and 500 cc/min during the annealing process. Photocatalytic performance of as-prepared TNAs and N-TNAs was studied by monitoring the methylene blue degradation under visible light (λ ≥ 400 nm) illumination at 120 mW·cm−2. N-TNAs exhibited appreciably enhanced photocatalytic activity as compared to TNAs. The reaction rate constant for N-TNAs (9.47 at % N) reached 0.26 h−1, which was a 125% improvement over that of TNAs (0.115 h−1). The significant enhanced photocatalytic activity of N-TNAs over TNAs is attributed to the synergistic effects of (1) a reduced band gap associated with the introduction of N-doping states to serve as carrier reservoir, and (2) a reduced electron‒hole recombination rate
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