286 research outputs found
Smart Highway : ITS-G5 and C2VX based testbed for vehicular communications in real environments enhanced by edge/cloud technologies
Electron transport via local polarons at interface atoms
Electronic transport is profoundly modified in the presence of strong electron-vibration coupling. We show that in certain situations, the electron flow takes place only when vibrations are excited. By controlling the segregation of boron in semiconducting Si(111)-3√×3√R30° surfaces, we create a type of adatom with a dangling-bond state that is electronically decoupled from any other electronic state. However, probing this state with scanning tunnelling microscopy at 5 K yields high currents. These findings are rationalized by ab-initio calculations that show the formation of a local polaron in the transport process
Power consumption evaluation of circuit-switched versus packet-switched optical backbone networks
While telecommunication networks have historically been dominated by a circuit-switched paradigm, the last decades have seen a clear trend towards packet-switched networks. In this paper we evaluate how both paradigms perform in optical backbone networks from a power consumption point of view, and whether the general agreement of circuit switching being more power-efficient holds. We consider artificially generated topologies of various sizes, mesh degrees and not yet previously explored in this context transport linerates. We cross-validate our findings with a number of realistic topologies. Our results show that, as a generalization, packet switching can become preferable when the traffic demands are lower than half the transport linerate. We find that an increase in the network node count does not consistently increase the energy savings of circuit switching over packet switching, but is heavily influenced by the mesh degree and (to a minor extent) by the average link length
Coupling to haloform molecules in intercalated C60?
For field-effect-doped fullerenes it was reported that the superconducting
transition temperature Tc is markedly larger for C60.2CHX_3 (X=Cl, Br)
crystals, than for pure C60. Initially this was explained by the expansion of
the volume per C60-molecule and the corresponding increase in the density of
states at the Fermi level in the intercalated crystals. On closer examination
it has, however, turned out to be unlikely that this is the mechanism behind
the increase in Tc. An alternative explanation of the enhanced transition
temperatures assumes that the conduction electrons not only couple to the
vibrational modes of the C60-molecule, but also to the modes of the
intercalated molecules. We investigate the possibility of such a coupling. We
find that, assuming the ideal bulk structure of the intercalated crystal, both
a coupling due to hybridization of the molecular levels, and a coupling via
dipole moments should be very small. This suggests that the presence of the
gate-oxide in the field-effect-devices strongly affects the structure of the
fullerene crystal at the interface.Comment: 4 pages, 1 figure, to be published in PRB (rapid communication
The Structure of the [Zn_In - V_P] Defect Complex in Zn Doped InP
We study the structure, the formation and binding energies and the transfer
levels of the zinc-phosphorus vacancy complex [Zn_In - V_P] in Zn doped p-type
InP, as a function of the charge, using plane wave ab initio DFT-LDA
calculations in a 64 atom supercell. We find a binding energy of 0.39 eV for
the complex, which is neutral in p-type material, the 0/-1 transfer level lying
0.50 eV above the valence band edge, all in agreement with recent positron
annihilation experiments. This indicates that, whilst the formation of
phosphorus vacancies (V_P) may be involved in carrier compensation in heavily
Zn doped material, the formation of Zn-vacancy complexes is not.
Regarding the structure: for charge states Q=+6 to -4 the Zn atom is in an
sp^2 bonded DX position and electrons added/removed go to/come from the
remaining dangling bonds on the triangle of In atoms. This reduces the
effective vacancy volume monatonically as electrons are added to the complex,
also in agreement with experiment. The reduction occurs through a combination
of increased In-In bonding and increased Zn-In electrostatic attraction. In
addition, for certain charge states we find complex Jahn-Teller behaviour in
which up to three different structures, (with the In triangle dimerised,
antidimerised or symmetric) are stable and are close to degenerate. We are able
to predict and successfully explain the structural behaviour of this complex
using a simple tight binding model.Comment: 10 pages text (postscript) plus 8 figures (jpeg). Submitted to Phys.
Rev.
Reversal of the Charge Transfer between Host and Dopant Atoms in Semiconductor Nanocrystals
We present ab initio density functional calculations that show P (Al) dopant
atoms in small hydrogen-terminated Si crystals to be negatively (positively)
charged. These signs of the dopant charges are reversed relative to the same
dopants in bulk Si. We predict this novel reversal of the dopant charge (and
electronic character of the doping) to occur at crystal sizes of order 100 Si
atoms. We explain it as a result of competition between fundamental principles
governing charge transfer in bulk semiconductors and molecules and predict it
to occur in nanocrystals of most semiconductors.Comment: 4 pages, 4 figures (3 in color), 2 table
A look into the future of in-building networks: roadmapping the fiber invasion
Optical fiber-based in-building network solutions can outperform in the near future copper- and radiobased solutions both regarding performance and costs. POF solutions are maturing, and can already today be cheaper than Cat-5e solutions when ducts are shared with electricity cabling. Advanced signal modulation techniques allow high-capacity services over POF. With their extra features of multi-wavelength transport and routing, fiber solutions offer a higher network throughput and flexibility, and improved sustainability
Use of the Generalized Gradient Approximation in Pseudopotential Calculations of Solids
We present a study of the equilibrium properties of -bonded solids within
the pseudopotential approach, employing recently proposed generalized gradient
approximation (GGA) exchange correlation functionals. We analyze the effects of
the gradient corrections on the behavior of the pseudopotentials and discuss
possible approaches for constructing pseudopotentials self-consistently in the
context of gradient corrected functionals. The calculated equilibrium
properties of solids using the GGA functionals are compared to the ones
obtained through the local density approximation (LDA) and to experimental
data. A significant improvement over the LDA results is achieved with the use
of the GGA functionals for cohesive energies. For the lattice constant, the
same accuracy as in LDA can be obtained when the nonlinear coupling between
core and valence electrons introduced by the exchange correlation functionals
is properly taken into account. However, GGA functionals give bulk moduli that
are too small compared to experiment.Comment: 15 pages, latex, no figure
Magic Numbers of Silicon Clusters
A structural model for intermediate sized silicon clusters is proposed that
is able to generate unique structures without any dangling bonds. This
structural model consists of bulk-like core of five atoms surrounded by
fullerene-like surface. Reconstruction of the ideal fullerene geometry results
in the formation of crown atoms surrounded by -bonded dimer pairs. This
model yields unique structures for \Si{33}, \Si{39}, and \Si{45} clusters
without any dangling bonds and hence explains why these clusters are least
reactive towards chemisorption of ammonia, methanol, ethylene, and water. This
model is also consistent with the experimental finding that silicon clusters
undergo a transition from prolate to spherical shapes at \Si{27}. Finally,
reagent specific chemisorption reactivities observed experimentally is
explained based on the electronic structures of the reagents.Comment: 4 pages + 3 figures (postscript files after \end{document}
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