MATLAB Image Treatment of Copper-Steel Laser Welding

Continuous Yb:YAG laser keyhole welding of the pure copper plate to steel 316L sheet is performed for different laser parameters. The laser-generated welding keyhole and weld melted zone are observed by a high-speed camera. The image is treated by MATLAB and simple code is built to calculate the keyhole and melted zone area. This treatment is validated by the actual welding measurements, and the accuracy of the measurements is tested by the confidence interval law. The images obtained of keyhole and melt zone area in dissimilar laser welding are treated and analyzed to study the effect of changing the laser parameters

Role of the TMG flow rate on the GaN layer properties grown by MOVPE on (hkl) GaAs substrates

International audienceThe role of the TMG flow rate on the properties of the GaN layer grown by MOVPE on (001) and (11n)/n=2,3 GaAs substrates were investigated. The surface morphology, crystalline quality and optical property were found to be strongly dependent on the TMG flow rate. As the latter decreased to 16 μmol/min, in-situ reflectance measurements showed a constant signal. This is attributed to the enhanced coalescence process, which resulted in the improvement of the surface morphology. A high TMG flow rate of 40 μmol/min sccm promoted predominantly vertical growth and resulted in the formation of a three-dimensional island. The lowest YL intensity and FWHM values of near band edge emission were obtained for GaN layers grown on (001) GaAs substrate with a TMG flow rate of 16 μmol/min, indicating an improvement of the optical properties of the GaN layer. This improvement is attributed to the coalescence process at the initial growth stage of GaN and the lateral growth process. All these behaviors were always observable whatever the used substrates. Depth resolved-CL showed that a mechanism of phase transformation in response to changing the substrate orientations

Influence of Ni content on structural, magnetocaloric and electrical properties in manganite La 0.6 Ba 0.2 Sr 0.2 Mn 1− x Ni x O 3 (0 ≤ x ≤ 0.1) type perovskites

International audienceWe present a detailed study on the physical properties of La 0.6 Ba 0.2 Sr 0.2 Mn 1− x Ni x O 3 samples ( x = 0.00, 0.05 and 0.1)

Structural, magnetic and theoretical investigation of the magnetocaloric effect of La 0.6 Sr 0.4 MnO 3 /x(Sb 2 O 3 ) compound

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Study of cubic GaN clusters in hexagonal GaN layers and their dependence with the growth temperature

International audienceThe inclusion of cubic phase in MOVPE-grown hexagonal GaN on GaAs substrate and its dependence with the growth temperature are investigated by high-resolution X-ray diffraction (HR-XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and cathodoluminescence (CL). It is observed that the GaN layers surface exhibits 3D-grains structure. The density and shape of these grains are largely dependent on the growth temperature. HR-XRD study reveals the presence of cubic GaN clusters in the hexagonal GaN layer. Using CL we show that the cubic inclusions are not localized at the substrate/epilayer interface but propagate throughout the film

Effect of GaAs substrate orientation on the growth kinetic of GaN layer grown by MOVPE

International audienceWe have investigated the kinetic growth of low temperature GaN nucleation layers (LT-GaN) grown on GaAs substrates with different crystalline orientations. GaN nucleation layers were grown by metal organic vapor phase epitaxy (MOVPE) in a temperature range of 500-600°C on oriented (001), (113), (112) and (111) GaAs substrates. The growth was in-situ monitored by laser reflectometry (LR). Using an optical model, including time-dependent surface roughness and growth rate profiles, simulations were performed to best approach the experimental reflectivity curves. Results are discussed and correlated with ex-situ analyses, such as atomic force microscopy (AFM) and UV-visible reflectance (SR). We show that the GaN nucleation layers growth results the formation of GaN islands whose density and size vary greatly with both growth temperature and substrate orientation. Arrhenius plots of the growth rate for each substrate give values of activation energy varying from 0.20 eV for the (001) orientation to 0.35 eV for the (113) orientation. Using cathodoluminescence (CL), we also show that high temperature (800-900°C) GaN layers grown on top of the low temperature (550°C) GaN nucleation layers, grown themselves on the GaAs substrates with different orientations, exhibit cubic or hexagonal phase depending on both growth temperature and substrate orientation