Effective Interconnect Networks Design in CMOS 45 nm Circuits to Joint Reductions of XT and Delay for Transmission of Very High Speed Signals

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Intercomparison of Permittivity Measurement Techniques for Ferroelectric Thin Layers

International audienceThe dielectric properties of a KTa0.65Nb0.35O3 (KTN) ferroelectric composition for a submicronic thin layer were measured in the microwave domain using different electromagnetic characterization methods. Complementary experimental techniques (broadband methods versus resonant techniques, waveguide versus transmission line) and complementary data processing procedures (quasi-static theoretical approaches versus full-wave analysis) were selected to investigate the best way to characterize ferroelectric thin films. The measured data obtained from the cylindrical resonant cavity method, the experimental method that showed the least sources of uncertainty, were taken as reference values for comparisons with results obtained using broadband techniques. The error analysis on the methods used is discussed with regard to the respective domains of validity for each method; this enabled us to identify the best experimental approach for obtaining an accurate determination of the microwave dielectric properties of ferroelectric thin layers

Structural and optical properties on thulium-doped LHPG-grown Ta2O5 fibres

Structural, spectroscopic and dielectric properties of thulium-doped laser-heated pedestal Ta2O5 as-grown fibres were studied. Undoped samples grow preferentially with a single crystalline monoclinic structure. The fibre with the lowest thulium content (0.1 at%) also shows predominantly a monoclinic phase and no intra-4f12 Tm3+ recombination was observed. For sample with the highest thulium amount (1.0 at%), the appearance of a dominant triclinic phase as well as intraionic optical activation was observed. The dependence of photoluminescence on excitation energy allows identification of different site locations of Tm3+ ions in the lattice. The absence of recombination between the first and the ground-state multiplets as well as the temperature dependence of the observed transitions was justified by an efficient energy transfer between the Tm3+ ions. Microwave dielectric properties were investigated using the small perturbation theory. At a frequency of 5 GHz, the undoped material exhibits a dielectric permittivity of 21 and for thulium-doped Ta2O5 samples it decreases to 18 for the highest doping concentration. Nevertheless, the dielectric losses maintain a very low value.FCT - PTDC/CTM/66195/2006FCT - PTDC/FIS/66262/2006FCT - PTDC/FIS/72843/200

Distributed Model of Two-Level Asymmetrical PCB Interconnect Tree

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Fast Estimation of High-Speed Signal Integrity for Coupled PCB Interconnects

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“Benefit on Interconnect Performance of a Relaxed Wire Density in a 45 nm Node of the Back End of Line”

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“Keep on shrinking interconnect size: is it still the best solution ?”

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"Electrical Characterization and Impact on Signal Integrity of New Basic Interconnection Elements Inside 3D Integrated Circuits",

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Modélisation haute fréquence de « Through Silicon Via » en fonction des matériaux, des architectures last et middle et des modes de transmission

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