Influence of the hydrostatic and the deviatoric components of stress on ductility of metals

Failure of ductile metals occurring as microvoids growth is known to strongly depend on the stress triaxiality parameter which is a conventional measure of the first stress invariant normalized with respect to the equivalent von Mises stress, which in turn is a conventional measure of the second stress invariant. The triaxiality parameter is usually assumed to not influence the stress-strain behavior of metals according to the von Mises plasticity. The effects of the Lode angle and of the stress triaxiality are investigated here with regard to ductile failure and to the stress-strain behavior. Experimental results and numerical predictions are compared for different metals and different specimen geometries, by investigating about various failure criteria and a procedure for the post-necking stress-strain characterization. Tensile specimens and notched plates are loaded up to failure, then finite elements simulations are verified by comparison with experimental data. The verified numerical data are then used to calculate local variables within the volume of failing specimens; the knowledge of these local variables enables to predict global and local failure conditions according to the selected failure models

Electrical Characterization of a Thin Edgeless N-on-p Planar Pixel Sensors For ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, and presenting some sensors' simulation results, a complete overview of the electrical characterization of the produced devices will be given.Comment: 9 pages, 9 figures, to appear in the proceedings of the 15th International Workshops on Radiation Imaging Detector

High resolution radio study of the Pulsar Wind Nebula within the Supernova Remnant G0.9+0.1

We have conducted a radio study at 3.6, 6 and 20 cm using ATCA and VLA and reprocessed XMM-Newton and Chandra data of the pulsar wind nebula (PWN) in the supernova remnant (SNR) G0.9+0.1. The new observations revealed that the morphology and symmetry suggested by Chandra observations (torus and jet-like features) are basically preserved in the radio range in spite of the rich structure observed in the radio emission of this PWN, including several arcs, bright knots, extensions and filaments. The reprocessed X-ray images show for the first time that the X-ray plasma fills almost the same volume as the radio PWN. Notably the X-ray maximum does not coincide with the radio maximum and the neutron star candidate CXOU J174722.8-280915 lies within a small depression in the radio emission. From the new radio data we have refined the flux density estimates, obtaining S(PWN) ~ 1.57 Jy, almost constant between 3.6 and 20 cm. For the whole SNR (compact core and shell), a flux density S(at 20 cm)= 11.5 Jy was estimated. Based on the new and the existing 90 cm flux density estimates, we derived alpha(PWN)=-0.18+/-0.04 and alpha(shell)=-0.68+/- 0.07. From the combination of the radio data with X-ray data, a spectral break is found near nu ~ 2.4 x 10^(12) Hz. The total radio PWN luminosity is L(radio)=1.2 x 10^(35) erg s^(-1) when a distance of 8.5 kpc is adopted. By assuming equipartition between particle and magnetic energies, we estimate a nebular magnetic field B = 56 muG. The associated particle energy turns out to be U(part)=5 x 10^(47) erg and the magnetic energy U(mag)=2 x 10^(47) erg. Based on an empirical relation between X-ray luminosity and pulsar energy loss rate, and the comparison with the calculated total energy, a lower limit of 1100 yr is derived for the age of this PWN.Comment: 10 pages,8 figures, accepted for publication in A&A, June 13 200

Wireless communication, identification and sensing technologies enabling integrated logistics: a study in the harbor environment

In the last decade, integrated logistics has become an important challenge in the development of wireless communication, identification and sensing technology, due to the growing complexity of logistics processes and the increasing demand for adapting systems to new requirements. The advancement of wireless technology provides a wide range of options for the maritime container terminals. Electronic devices employed in container terminals reduce the manual effort, facilitating timely information flow and enhancing control and quality of service and decision made. In this paper, we examine the technology that can be used to support integration in harbor's logistics. In the literature, most systems have been developed to address specific needs of particular harbors, but a systematic study is missing. The purpose is to provide an overview to the reader about which technology of integrated logistics can be implemented and what remains to be addressed in the future

Performance of Irradiated Thin Edgeless N-on-P Planar Pixel Sensors for ATLAS Upgrades

In view of the LHC upgrade phases towards the High Luminosity LHC (HL-LHC), the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. Because of its radiation hardness and cost effectiveness, the n-on-p silicon technology is a promising candidate for a large area pixel detector. The paper reports on the joint development, by LPNHE and FBK of novel n-on-p edgeless planar pixel sensors, making use of the active trench concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology, a complete overview of the electrical characterization of several irradiated samples will be discussed. Some comments about detector modules being assembled will be made and eventually some plans will be outlined.Comment: 6 pages, 13 figures, to appear in the proceedings of the 2013 Nuclear Science Symposium and Medical Imaging Conference. arXiv admin note: text overlap with arXiv:1311.162

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade

In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plans to upgrade the Inner Detector with an all-silicon system. The n-on-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors. We report on the development of novel n-in-p edgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use of the "active edge" concept for the reduction of the dead area at the periphery of the device. After discussing the sensor technology and fabrication process, we present device simulations (pre- and post-irradiation) performed for different sensor configurations. First preliminary results obtained with the test-structures of the production are shown.Comment: 6 pages, 5 figures, to appear in the proceedings of the 9th International Conference on Radiation Effects on Semiconductor Materials Detectors and Device