Loss and Dynamic Magnetic Field Measurements in LHC Dipoles

Knowledge of AC loss and dynamic magnetic field distortion in the main LHC dipoles is both important for the assessment of the accelerator performance and providing insight into the properties of assembled magnets. We measured the loss due to the current cycling in a few 1-meter long model dipoles, 15-meter long dipole prototypes and pre-series magnets. As expected the loss depends linearly on the rate of the current change. From the slope of this dependence, the contact resistance between the strands of the opposite layers of the cable, Rc, was evaluated for the inner winding of the dipole. We discuss the method to estimate the Rc value in the outer winding. The Rc value has been also derived independently from measurements of the magnetic field. For this, the ramp rate dependent component of the main field as well as of the harmonics has been measured. The main magnetic field measurements were performed using both stationary coils and Hall probes. Rotating coils were used to perform the harmonic measurements

Objective classification of fabric pilling based on the two-dimensional discrete wavelet transform

A number of methods for automated objective ratings of fabric pilling based on image analysis are described in the literature. The periodic structure of fabrics makes them suitable candidates for frequency domain analysis. We propose a new method of frequency domain analysis based on the two-dimensional discrete wavelet transform to objectively measure pilling intensity in sample images. We present a preliminary evaluation of the proposed method based on analysis of two series of standard pilling evaluation test images. The initial results suggest that the proposed method is feasible, and that the ability of the method to discriminate between levels of pilling intensity depends on the wavelet analysis scale being closely matched to the fabric interyarn pitch. We also present a heuristic method for optimal selection of an analysis wavelet and associated analysis scale. <br /

Persistent and Coupling Current Effects in the LHC Superconducting Dipoles

One of the main issues for the operation of the LHC accelerator at CERN is the field errors generated by persistent and coupling currents in the main dipoles at injection conditions, i.e., 0.54 T dipole field. For this reason we are conducting systematic magnetic field measurements to quantify the above effects and compare them to the expected values from measurement on strands and cables. We discuss the results in terms of DC effects from persistent current magnetization, AC effects with short time constant from strand and cable coupling currents, and long-term decay during constant current excitation. Average and spread of the measured field errors over the population of magnets tested are as expected or smaller. Field decay at injection, and subsequent snap-back, show for the moment the largest variation from magnet to magnet, with weak correlation to parameters that can be controlled during production. For this reason these effects are likely to result in the largest spread of field errors over the whole dipole production

Atomically thin boron nitride: a tunnelling barrier for graphene devices

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.Comment: 7 pages, 5 figure

Signatures of phonon and defect-assisted tunneling in planar metal-hexagonal boron nitride-graphene junctions

Electron tunneling spectroscopy measurements on van der Waals heterostructures consisting of metal and graphene (or graphite) electrodes separated by atomically thin hexagonal boron nitride tunnel barriers are reported. The tunneling conductance, dI/dV, at low voltages is relatively weak, with a strong enhancement reproducibly observed to occur at around |V| ≈ 50 mV. While the weak tunneling at low energies is attributed to the absence of substantial overlap, in momentum space, of the metal and graphene Fermi surfaces, the enhancement at higher energies signals the onset of inelastic processes in which phonons in the heterostructure provide the momentum necessary to link the Fermi surfaces. Pronounced peaks in the second derivative of the tunnel current, d2I/dV2, are observed at voltages where known phonon modes in the tunnel junction have a high density of states. In addition, features in the tunneling conductance attributed to single electron charging of nanometer-scale defects in the boron nitride are also observed in these devices. The small electronic density of states of graphene allows the charging spectra of these defect states to be electrostatically tuned, leading to “Coulomb diamonds” in the tunneling conductance

Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices

By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images

Hexagonal boron nitride tunnel barriers grown on graphite by high temperature molecular beam epitaxy

We demonstrate direct epitaxial growth of high-quality hexagonal boron nitride (hBN) layers on graphite using high-temperature plasma-assisted molecular beam epitaxy. Atomic force microscopy reveals mono- and few-layer island growth, while conducting atomic force microscopy shows that the grown hBN has a resistance which increases exponentially with the number of layers, and has electrical properties comparable to exfoliated hBN. X-ray photoelectron spectroscopy, Raman microscopy and spectroscopic ellipsometry measurements on hBN confirm the formation of sp2-bonded hBN and a band gap of 5.9 ± 0.1 eV with no chemical intermixing with graphite. We also observe hexagonal moiré patterns with a period of 15 nm, consistent with the alignment of the hBN lattice and the graphite substrate