Investigation of nanometer scale charge carrier density variations with scattering-type scanning near-field microscopy in the THz regime

Near-field microscopy is a versatile technique for non-destructive detection of optical properties on the nanometer scale. Contrary to conventional microscopy techniques, the resolution in near-field microscopy is not restricted by the diffraction limit, but by the size of the probe only. Typically, wavelength-independent resolution in the range of few ten nanometers can be achieved. Many fundamental phenomena in solid states occur at such small length scales and can be probed by infrared and THz radiation. In the present work, nanoscale charge carrier distributions were investigated with near-field microscopy in classic semiconductors and state-of-the-art graphene field-effect transistors. A CO2 laser, the free-electron laser FELBE at the Helmholtz-Zentrum Dresden Rossendorf and a photoconductive antenna were applied as radiation sources for illumination of the samples. In the theoretical part of the work, the band model for charge carriers in semiconductors is briefly explained to derive typical charge carrier densities of such materials. The influence of the charge carriers to the light-matter interaction is introduced via the Drude model and evaluated for both infrared and THz radiation. In field-effect transistors, charge carrier density waves can occur when strong AC fields are coupled into the device. The phenomena in such transistors are introduced as a more complex material system. To describe the near-field coupling of the samples to the nanoscopic probe, the dipole model is introduced and extended for periodic charge carrier density, as elicited by low repetition-rate excitation lasers. Consequently, sidebands occur as new frequencies in the signal spectrum, allowing for a more sensitive probing of such transient processes. Experimental investigations of these sidebands were performed with a CO2 laser setup on a bulk germanium sample which was excited with femtosecond laser pulses. New frequencies up to the 8th sideband could be observed. The results show a characteristic near-field decay for all sidebands when the probe-sample distance is increased. A nanoscale material contrast in the sidebands signatures has been demonstrated via near-field scans on a gold / germanium heterostructure. Near-field signatures of graphene-field effect transistors have been examined utilizing FELBE. The results match the predicted behavior of charge carriers in such a device and in particular represent the first direct observations of the plasma waves. In collaboration with the group of Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt), the plasma wave velocity in the graphene field-effect transistor has been derived via fitting to the model for two datasets on different devices from independent fabrications. The obtained velocity is in good agreement with literature values. The results promise the application of field-effect transistors as THz detectors and emitters and may lead to faster communication technology.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures BibliographyNahfeldmikroskopie ist eine vielseite Technik für das zerstörungsfreie Auslesen von optischen Eigenschaften auf der Nanoskala. Im Gegensatz zur konventionellen Mikroskopie ist die Auflösung nicht durch Beugungseffekte, sondern durch die Größe der genutzten Sonde begrenzt. Überlicherweise werden wellenlängenunabhängig Auflösungen von einigen zehn Nanometern erreicht. Viele fundamentale Prozesse in der Festkörperphysik treten auf Längenskalen dieser Größenordnung auf und können mit Infrarot- und THz-Strahlung untersucht werden. In dieser Arbeit wurden nanoskalige Ladungsträgerverteilungen mit Rasternahfeldmikroskopie untersucht, einerseits in klassischen Halbleitern, anderseits in state-of-the-art Graphen Feldeffekttransistoren. Zur Beleuchtung der Proben wurden ein CO2 Laser, der freie-Elektronen Laser FELBE am Helmholtz-Zentrum Dresden-Rossendorf und eine photoleitende Antenne verwendet. Im theoretischen Teil der Arbeit wird das Bändermodell für Ladungsträger in Halbleitern erklärt, um daraus typische Ladungsträgerdichten in diesen Materialien abzuleiten. Der Einfluss der Ladungsträger auf die Interaktion mit Strahlung wird durch das Drude-Modell eingeführt und für Infrarot- und THz-Strahlung abgeschätzt. In Graphen Feldeffekttransistoren können Ladungsträgerdichtewellen auftreten, wenn starke Wechselfelder in das Bauelement eingekoppelt werden. Die Prozesse in solchen Transistoren werden als komplexeres Materialsystem eingeführt. Um die Nahfeldkopplung der Proben an die Sonde zu beschreiben, wird das Dipol-Modell eingeführt und für periodische Ladungsträgerdichten erweitert, wie sie bspw. durch Pumplaser mit niedrigen Repetitionsraten erzeugt werden können. In der Folge entstehen Seitenbänder als neue Frequenzen im Signalspektrum, welche eine sensitivere Messung solcher transienten Prozesse ermöglichen. Experimentelle Untersuchungen des erweiterten Dipol-Modells wurden mit einem CO2 Laser Aufbau an einem Germaniumkristall durchgeführt, welcher mit Femtosekunden Laserpulsen angeregt wird. Neue Frequenzen im Spektrum konnten bis zu dem achten Seitenband beobachtet werden. Die Resultate zeigen den typischen Abfall des Nahfeldes, wenn der Abstand zwischen Sonde und Probe vergrößert wird. Ein Materialkontrast auf der Nanoskale im Seitenband-Signal konnte durch laterale Rasternahfeld-Scans auf einer Gold/Germanium Heterostruktur gezeigt werden. Die Nahfeldsignaturen der Graphen Feldeffekttransistoren wurden mit FELBE untersucht. Die Resultate stimmen mit dem vorausgesagtem Verhalten der Ladungsträger in einem solchen Bauteil überein und sind die erste direkte Beobachtung solcher Plasmawellen. In Kooperation mit der Gruppe um Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt) wurde die Geschwindigkeit der Plasmawelle durch Regression der Daten berechnet. Dabei wurden zwei Datensätzen an Bauteilen von unabhängigen Fabrikationsprozessen genutzt. Die berechnete Geschwindigkeit ist in guter Übereinstimmung mit Literaturwerten. Die Resultate verheißen die Anwendung von Feldeffekttransistoren als THz Sender und Detektoren und könnten zu schnellerer Kommunikationstechnologie führen.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures Bibliograph

A Local Superlens

Superlenses enable near-field imaging beyond the optical diffraction limit. However, their widespread implementation in optical imaging technology so far has been limited by large-scale fabrication, fixed lens position, and specific object materials. Here we demonstrate that a dielectric lamella of subwavelength size in all three spatial dimensions behaves as a compact superlens that operates at infrared wavelengths and can be positioned to image any local microscopic area of interest on the sample. In particular, the lamella superlens may be placed in contact with any type of object and therefore enables examination of hard-to-scan samples, for example, with high topography or in liquids, without altering the specimen design. This lamella-based local superlens design is directly applicable to subwavelength light-based technology, such as integrated optics

Terahertz-slicing -- an all-optical synchronization for 4th generation light sources

A conceptually new approach to synchronizing accelerator-based light sources and external laser systems is presented. The concept is based on utilizing a sufficiently intense accelerator-based single-cycle terahertz pulse to slice a thereby intrinsically synchronized femtosecond-level part of a longer picosecond laser pulse in an electro-optic crystal. A precise synchronization of the order of 10 fs is demonstrated, allowing for real-time lock-in amplifier signal demodulation. We demonstrate successful operation of the concept with three benchmark experiments using a 4th generation accelerator-based terahertz light source, i.e. (i) far-field terahertz time-domain spectroscopy, (ii) terahertz high harmonic generation spectroscopy, and (iii) terahertz scattering-type scanning near-field optical microscopy

COMPASSO mission and its iodine clock: outline of the clock design

One of the limiting factors for GNSS geolocation capabilities is the clock technology deployed on the satellites and the knowledge of the satellite position. Consequently, there are numerous ongoing efforts to improve the stability of space-deployable clocks for next-generation GNSS. The COMPASSO mission is a German Aerospace Center (DLR) project to demonstrate high-performance quantum optical technologies in space with two laser-based absolute frequency references, a frequency comb and a laser communication and ranging terminal establishing a link with the ground station located in Oberpfaffenhofen, Germany. A successful mission will strongly improve the timing stability of space-deployable clocks, demonstrate time transfer between different clocks and allow for ranging in the mm-range. Thus, the technology is a strong candidate for future GNSS satellite clocks and offers possibilities for novel satellite system architectures and can improve the performance of scientific instruments as well. The COMPASSO payload will be delivered to the international space station in 2025 for a mission time of 2 years. In this article, we will highlight the key systems and functionalities of COMPASSO, with the focus set to the absolute frequency references

Investigation of nanometer scale charge carrier density variations with scattering-type scanning near-field microscopy in the THz regime

Near-field microscopy is a versatile technique for non-destructive detection of optical properties on the nanometer scale. Contrary to conventional microscopy techniques, the resolution in near-field microscopy is not restricted by the diffraction limit, but by the size of the probe only. Typically, wavelength-independent resolution in the range of few ten nanometers can be achieved. Many fundamental phenomena in solid states occur at such small length scales and can be probed by infrared and THz radiation. In the present work, nanoscale charge carrier distributions were investigated with near-field microscopy in classic semiconductors and state-of-the-art graphene field-effect transistors. A CO2 laser, the free-electron laser FELBE at the Helmholtz-Zentrum Dresden Rossendorf and a photoconductive antenna were applied as radiation sources for illumination of the samples. In the theoretical part of the work, the band model for charge carriers in semiconductors is briefly explained to derive typical charge carrier densities of such materials. The influence of the charge carriers to the light-matter interaction is introduced via the Drude model and evaluated for both infrared and THz radiation. In field-effect transistors, charge carrier density waves can occur when strong AC fields are coupled into the device. The phenomena in such transistors are introduced as a more complex material system. To describe the near-field coupling of the samples to the nanoscopic probe, the dipole model is introduced and extended for periodic charge carrier density, as elicited by low repetition-rate excitation lasers. Consequently, sidebands occur as new frequencies in the signal spectrum, allowing for a more sensitive probing of such transient processes. Experimental investigations of these sidebands were performed with a CO2 laser setup on a bulk germanium sample which was excited with femtosecond laser pulses. New frequencies up to the 8th sideband could be observed. The results show a characteristic near-field decay for all sidebands when the probe-sample distance is increased. A nanoscale material contrast in the sidebands signatures has been demonstrated via near-field scans on a gold / germanium heterostructure. Near-field signatures of graphene-field effect transistors have been examined utilizing FELBE. The results match the predicted behavior of charge carriers in such a device and in particular represent the first direct observations of the plasma waves. In collaboration with the group of Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt), the plasma wave velocity in the graphene field-effect transistor has been derived via fitting to the model for two datasets on different devices from independent fabrications. The obtained velocity is in good agreement with literature values. The results promise the application of field-effect transistors as THz detectors and emitters and may lead to faster communication technology.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures BibliographyNahfeldmikroskopie ist eine vielseite Technik für das zerstörungsfreie Auslesen von optischen Eigenschaften auf der Nanoskala. Im Gegensatz zur konventionellen Mikroskopie ist die Auflösung nicht durch Beugungseffekte, sondern durch die Größe der genutzten Sonde begrenzt. Überlicherweise werden wellenlängenunabhängig Auflösungen von einigen zehn Nanometern erreicht. Viele fundamentale Prozesse in der Festkörperphysik treten auf Längenskalen dieser Größenordnung auf und können mit Infrarot- und THz-Strahlung untersucht werden. In dieser Arbeit wurden nanoskalige Ladungsträgerverteilungen mit Rasternahfeldmikroskopie untersucht, einerseits in klassischen Halbleitern, anderseits in state-of-the-art Graphen Feldeffekttransistoren. Zur Beleuchtung der Proben wurden ein CO2 Laser, der freie-Elektronen Laser FELBE am Helmholtz-Zentrum Dresden-Rossendorf und eine photoleitende Antenne verwendet. Im theoretischen Teil der Arbeit wird das Bändermodell für Ladungsträger in Halbleitern erklärt, um daraus typische Ladungsträgerdichten in diesen Materialien abzuleiten. Der Einfluss der Ladungsträger auf die Interaktion mit Strahlung wird durch das Drude-Modell eingeführt und für Infrarot- und THz-Strahlung abgeschätzt. In Graphen Feldeffekttransistoren können Ladungsträgerdichtewellen auftreten, wenn starke Wechselfelder in das Bauelement eingekoppelt werden. Die Prozesse in solchen Transistoren werden als komplexeres Materialsystem eingeführt. Um die Nahfeldkopplung der Proben an die Sonde zu beschreiben, wird das Dipol-Modell eingeführt und für periodische Ladungsträgerdichten erweitert, wie sie bspw. durch Pumplaser mit niedrigen Repetitionsraten erzeugt werden können. In der Folge entstehen Seitenbänder als neue Frequenzen im Signalspektrum, welche eine sensitivere Messung solcher transienten Prozesse ermöglichen. Experimentelle Untersuchungen des erweiterten Dipol-Modells wurden mit einem CO2 Laser Aufbau an einem Germaniumkristall durchgeführt, welcher mit Femtosekunden Laserpulsen angeregt wird. Neue Frequenzen im Spektrum konnten bis zu dem achten Seitenband beobachtet werden. Die Resultate zeigen den typischen Abfall des Nahfeldes, wenn der Abstand zwischen Sonde und Probe vergrößert wird. Ein Materialkontrast auf der Nanoskale im Seitenband-Signal konnte durch laterale Rasternahfeld-Scans auf einer Gold/Germanium Heterostruktur gezeigt werden. Die Nahfeldsignaturen der Graphen Feldeffekttransistoren wurden mit FELBE untersucht. Die Resultate stimmen mit dem vorausgesagtem Verhalten der Ladungsträger in einem solchen Bauteil überein und sind die erste direkte Beobachtung solcher Plasmawellen. In Kooperation mit der Gruppe um Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt) wurde die Geschwindigkeit der Plasmawelle durch Regression der Daten berechnet. Dabei wurden zwei Datensätzen an Bauteilen von unabhängigen Fabrikationsprozessen genutzt. Die berechnete Geschwindigkeit ist in guter Übereinstimmung mit Literaturwerten. Die Resultate verheißen die Anwendung von Feldeffekttransistoren als THz Sender und Detektoren und könnten zu schnellerer Kommunikationstechnologie führen.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures Bibliograph

Investigation of nanometer scale charge carrier density variations with scattering-type scanning near-field microscopy in the THz regime

Near-field microscopy is a versatile technique for non-destructive detection of optical properties on the nanometer scale. Contrary to conventional microscopy techniques, the resolution in near-field microscopy is not restricted by the diffraction limit, but by the size of the probe only. Typically, wavelength-independent resolution in the range of few ten nanometers can be achieved. Many fundamental phenomena in solid states occur at such small length scales and can be probed by infrared and THz radiation. In the present work, nanoscale charge carrier distributions were investigated with near-field microscopy in classic semiconductors and state-of-the-art graphene field-effect transistors. A CO2 laser, the free-electron laser FELBE at the Helmholtz-Zentrum Dresden Rossendorf and a photoconductive antenna were applied as radiation sources for illumination of the samples. In the theoretical part of the work, the band model for charge carriers in semiconductors is briefly explained to derive typical charge carrier densities of such materials. The influence of the charge carriers to the light-matter interaction is introduced via the Drude model and evaluated for both infrared and THz radiation. In field-effect transistors, charge carrier density waves can occur when strong AC fields are coupled into the device. The phenomena in such transistors are introduced as a more complex material system. To describe the near-field coupling of the samples to the nanoscopic probe, the dipole model is introduced and extended for periodic charge carrier density, as elicited by low repetition-rate excitation lasers. Consequently, sidebands occur as new frequencies in the signal spectrum, allowing for a more sensitive probing of such transient processes. Experimental investigations of these sidebands were performed with a CO2 laser setup on a bulk germanium sample which was excited with femtosecond laser pulses. New frequencies up to the 8th sideband could be observed. The results show a characteristic near-field decay for all sidebands when the probe-sample distance is increased. A nanoscale material contrast in the sidebands signatures has been demonstrated via near-field scans on a gold / germanium heterostructure. Near-field signatures of graphene-field effect transistors have been examined utilizing FELBE. The results match the predicted behavior of charge carriers in such a device and in particular represent the first direct observations of the plasma waves. In collaboration with the group of Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt), the plasma wave velocity in the graphene field-effect transistor has been derived via fitting to the model for two datasets on different devices from independent fabrications. The obtained velocity is in good agreement with literature values. The results promise the application of field-effect transistors as THz detectors and emitters and may lead to faster communication technology.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures BibliographyNahfeldmikroskopie ist eine vielseite Technik für das zerstörungsfreie Auslesen von optischen Eigenschaften auf der Nanoskala. Im Gegensatz zur konventionellen Mikroskopie ist die Auflösung nicht durch Beugungseffekte, sondern durch die Größe der genutzten Sonde begrenzt. Überlicherweise werden wellenlängenunabhängig Auflösungen von einigen zehn Nanometern erreicht. Viele fundamentale Prozesse in der Festkörperphysik treten auf Längenskalen dieser Größenordnung auf und können mit Infrarot- und THz-Strahlung untersucht werden. In dieser Arbeit wurden nanoskalige Ladungsträgerverteilungen mit Rasternahfeldmikroskopie untersucht, einerseits in klassischen Halbleitern, anderseits in state-of-the-art Graphen Feldeffekttransistoren. Zur Beleuchtung der Proben wurden ein CO2 Laser, der freie-Elektronen Laser FELBE am Helmholtz-Zentrum Dresden-Rossendorf und eine photoleitende Antenne verwendet. Im theoretischen Teil der Arbeit wird das Bändermodell für Ladungsträger in Halbleitern erklärt, um daraus typische Ladungsträgerdichten in diesen Materialien abzuleiten. Der Einfluss der Ladungsträger auf die Interaktion mit Strahlung wird durch das Drude-Modell eingeführt und für Infrarot- und THz-Strahlung abgeschätzt. In Graphen Feldeffekttransistoren können Ladungsträgerdichtewellen auftreten, wenn starke Wechselfelder in das Bauelement eingekoppelt werden. Die Prozesse in solchen Transistoren werden als komplexeres Materialsystem eingeführt. Um die Nahfeldkopplung der Proben an die Sonde zu beschreiben, wird das Dipol-Modell eingeführt und für periodische Ladungsträgerdichten erweitert, wie sie bspw. durch Pumplaser mit niedrigen Repetitionsraten erzeugt werden können. In der Folge entstehen Seitenbänder als neue Frequenzen im Signalspektrum, welche eine sensitivere Messung solcher transienten Prozesse ermöglichen. Experimentelle Untersuchungen des erweiterten Dipol-Modells wurden mit einem CO2 Laser Aufbau an einem Germaniumkristall durchgeführt, welcher mit Femtosekunden Laserpulsen angeregt wird. Neue Frequenzen im Spektrum konnten bis zu dem achten Seitenband beobachtet werden. Die Resultate zeigen den typischen Abfall des Nahfeldes, wenn der Abstand zwischen Sonde und Probe vergrößert wird. Ein Materialkontrast auf der Nanoskale im Seitenband-Signal konnte durch laterale Rasternahfeld-Scans auf einer Gold/Germanium Heterostruktur gezeigt werden. Die Nahfeldsignaturen der Graphen Feldeffekttransistoren wurden mit FELBE untersucht. Die Resultate stimmen mit dem vorausgesagtem Verhalten der Ladungsträger in einem solchen Bauteil überein und sind die erste direkte Beobachtung solcher Plasmawellen. In Kooperation mit der Gruppe um Prof. Dr. Hartmut G. Roskos (Goethe-Universität Frankfurt) wurde die Geschwindigkeit der Plasmawelle durch Regression der Daten berechnet. Dabei wurden zwei Datensätzen an Bauteilen von unabhängigen Fabrikationsprozessen genutzt. Die berechnete Geschwindigkeit ist in guter Übereinstimmung mit Literaturwerten. Die Resultate verheißen die Anwendung von Feldeffekttransistoren als THz Sender und Detektoren und könnten zu schnellerer Kommunikationstechnologie führen.:1 Introduction 2 Fundamentals 2.1 Semiconductors 2.2 Plasma Waves in Graphene Field-Effect Transistors 2.3 Near-Field Microscopy 2.3.1 Aperture-SNOM 2.3.2 Scattering-SNOM 2.4 THz Optics 3 SNOM-Theory 3.1 Dipole Model 3.2 Detection and Demodulation 3.3 Pump-induced Sidebands in SNOM 3.4 Field Enhancement by Resonant Probes 4 Near-Field Microscope Setups 4.1 FELBE THz SNOM 4.2 Pump-modulated s-SNOM 4.3 THz Time-Domain-Spectroscopy SNOM 5 Sideband Results 5.1 Pump-induced Sidebands in Germanium 5.2 Fluence Dependence 5.3 Higher-order sidebands 5.4 Oscillation Amplitude 5.5 Technical Aspects of the Sideband Demodulation 6 Field-Effect Transistors 6.1 Device Design 6.2 Data Analysis 6.3 Near-Field Overview Scans 6.4 Plasma Wave Examination 6.5 Conclusion 7 Discussion and Outlook A Appendix A.1 Scanning Probe Microscopy A.2 Atomic Force Microscope List of Figures Bibliograph

Optical nanoscopy of transient states in condensed matter

Recently, the fundamental and nanoscale understanding of complex phenomena in materials research and the life sciences, witnessed considerable progress. However, elucidating the underlying mechanisms, governed by entangled degrees of freedom such as lattice, spin, orbit, and charge for solids or conformation, electric potentials, and ligands for proteins, has remained challenging. Techniques that allow for distinguishing between different contributions to these processes are hence urgently required. In this paper we demonstrate the application of scattering-type scanning near-field optical microscopy (s-SNOM) as a novel type of nano-probe for tracking transient states of matter. We introduce a sideband-demodulation technique that allows for probing exclusively the stimuli-induced change of near-field optical properties. We exemplify this development by inspecting the decay of an electron-hole plasma generated in SiGe thin films through near-infrared laser pulses. Our approach can universally be applied to optically track ultrafast/-slow processes over the whole spectral range from UV to THz frequencies

Near-Field Optical Examination of Potassium n-Butyl Xanthate/Chalcopyrite Flotation Products

The present study introduces scattering-type scanning near-field infrared optical nanospectroscopy (s-SNIM) as a valuable and well-suited tool for spectrally fingerprinting n-butyl xanthate (KBX) molecules adsorbed to chalcopyrite (CCP) sample surfaces. The collector KBX is well known to float CCP and is used in beneficiation. We thus identified KBX reaction products both by IR optical far- and near-field techniques, applying attenuated total internal reflection Fourier-transform infrared spectroscopy (ATR FT-IR) in comparison to s-SNIM, respectively. The major KBX band around 880 cm−1 was probed in s-SNIM using both the tunable free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf facility, Germany, and table-top CO2 laser illumination. We then were able to monitor the KBX agglomeration in patches <500 nm in diameter at the CCP surface, as well as nanospectroscopically identify the presence of KBX reaction products down to the 10−4 M concentration

Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper, we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode, we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves, excited at 2 THz, are overdamped, and their decay time lies in the range of 25-70 fs. Despite this short decay time, the decay length is rather long, i.e., 0.3-0.5 μm, because of the rather large propagation speed of the plasma waves, which is found to lie in the range of 3.5-7 × 106 m/s, in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1/4 power law

Direct nanoscopic observation of plasma waves in the channel of a graphene field-effect transistor

Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cut-off frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper, we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode, we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves, excited at 2 THz, are overdamped, and their decay time lies in the range of 25–70 fs. Despite this short decay time, the decay length is rather long, i.e., 0.3-0.5 μm, because of the rather large propagation speed of the plasma waves, which is found to lie in the range of 3.5–7  7 10^6 m/s, in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted\ua01414 power law