Is flow velocity a significant parameter in flood damage modelling?

Flow velocity is generally presumed to influence flood damage. However, this influence is hardly quantified and virtually no damage models take it into account. Therefore, the influences of flow velocity, water depth and combinations of these two impact parameters on various types of flood damage were investigated in five communities affected by the Elbe catchment flood in Germany in 2002. 2-D hydraulic models with high to medium spatial resolutions were used to calculate the impact parameters at the sites in which damage occurred. A significant influence of flow velocity on structural damage, particularly on roads, could be shown in contrast to a minor influence on monetary losses and business interruption. Forecasts of structural damage to road infrastructure should be based on flow velocity alone. The energy head is suggested as a suitable flood impact parameter for reliable forecasting of structural damage to residential buildings above a critical impact level of 2 m of energy head or water depth. However, general consideration of flow velocity in flood damage modelling, particularly for estimating monetary loss, cannot be recommended

Improving the method of solar radiation durability determination of cable products

The authors suggest an extra physic-mechanical procedure to determine durability of cable goods to solar radiation exposure. The test check was carried out using the standard and the proposed procedures. The results of two tests were compared and analyzed. The use of the proposed technique allows improving the validity and reliability of the laboratory experiment conducted in a real production environment and exclude the low-quality cable items. The only disadvantage of the proposed technique is its labor intensiveness

Importance of electronic self-consistency in the TDDFT based treatment of nonadiabatic molecular dynamics

A mixed quantum-classical approach to simulate the coupled dynamics of electrons and nuclei in nanoscale molecular systems is presented. The method relies on a second order expansion of the Lagrangian in time-dependent density functional theory (TDDFT) around a suitable reference density. We show that the inclusion of the second order term renders the method a self-consistent scheme and improves the calculated optical spectra of molecules by a proper treatment of the coupled response. In the application to ion-fullerene collisions, the inclusion of self-consistency is found to be crucial for a correct description of the charge transfer between projectile and target. For a model of the photoreceptor in retinal proteins, nonadiabatic molecular dynamics simulations are performed and reveal problems of TDDFT in the prediction of intra-molecular charge transfer excitations.Comment: 9 pages, 8 figures. Minor changes in content wrt older versio

Is flow velocity a significant parameter in flood damage modelling?

Flow velocity is generally presumed to influence flood damage. However, this influence is hardly quantified and virtually no damage models take it into account. Therefore, the influences of flow velocity, water depth and combinations of these two impact parameters on various types of flood damage were investigated in five communities affected by the Elbe catchment flood in Germany in 2002. 2-D hydraulic models with high to medium spatial resolutions were used to calculate the impact parameters at the sites in which damage occurred. A significant influence of flow velocity on structural damage, particularly on roads, could be shown in contrast to a minor influence on monetary losses and business interruption. Forecasts of structural damage to road infrastructure should be based on flow velocity alone. The energy head is suggested as a suitable flood impact parameter for reliable forecasting of structural damage to residential buildings above a critical impact level of 2m of energy head or water depth. However, general consideration of flow velocity in flood damage modelling, particularly for estimating monetary loss, cannot be recommended

III-V on silicon DFB laser arrays

We will present our work on epitaxially grown III-V on silicon DFB laser arrays, including results of pure InP-based lasers emitting around 900nm and InGaAs-on-InP lasers emitting around 1300nm

Do Aphid Colonies Amplify their Emission of Alarm Pheromone?

When aphids are attacked by natural enemies, they emit alarm pheromone to alert conspecifics. For most aphids tested, (E)-β-farnesene (EBF) is the main, or only, constituent of the alarm pheromone. In response to alarm pheromone, alerted aphids drop off the plant, walk away, or attempt to elude predators. However, under natural conditions, EBF concentration might be low due to the low amounts emitted, to rapid air movement, or to oxidative degradation. To ensure that conspecifics are warned, aphids might conceivably amplify the alarm signal by emitting EBF in response to EBF emitted by other aphids. To examine whether such amplification occurs, we synthesized deuterated EBF (DEBF), which allowed us to differentiate between applied and aphid-derived chemical. Colonies of Acyrthosiphon pisum were treated with DEBF, and headspace volatiles were collected and analyzed for evidence of aphid-derived EBF. No aphid-derived EBF was detected, suggesting that amplification of the alarm signal does not occur. We discuss the disadvantages of alarm signal reinforcement

Real-Time Analysis of Alarm Pheromone Emission by the Pea Aphid (Acyrthosiphon Pisum) Under Predation

Upon attack by predators or parasitoids, aphids emit volatile chemical alarm signals that warn other aphids of a potential risk of predation. Release rate of the major constituent of the alarm pheromone in pea aphids (Acyrthosiphon pisum), (E)-ß-farnesene (EBF), was measured for all nymphal and the adult stage as aphids were attacked individually by lacewing (Chrysoperla carnae) larvae. Volatilization of EBF from aphids under attack was quantified continuously for 60 min at 2-min intervals with a rapid gas chromatography technique (zNose™) to monitor headspace emissions. After an initial burst, EBF volatilization declined exponentially, and detectable amounts were still present after 30 min in most cases. Total emission of EBF averaged 16.33 ± 1.54 ng and ranged from 1.18 to 48.85 ng. Emission was higher in nymphs as compared to adults. No differences between pea aphid life stages were detected for their speed of alarm signal emission in response to lacewing larvae attack. This is the first time that alarm pheromone emission from single aphids has been reported

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa)P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This “proof of principle” points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics

Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (λ=890 nm)⁠. Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism