The conformity of initial objectives with the actual impacts of the hostile takeover defences regulation in the European Directive on Takeover Bids

http://www.ester.ee/record=b4412434~S1*es

Structure and thermal behaviour of dichlorobis(thiourea)cadmium(ii), a single-source precursor for CdS thin films

The title compound (1) crystallites in the space group Pmn2(1) with a = 13.110 (3), b = 5.813(1) and c = 6.482(1) Angstrom. Its crystal structure was redetermined from three-dimensional single-crystal data to a final R-value of 0.0221. The Cd2+ ion is tetrahedrally coordinated to two sulfur atoms from the tiourea ligand (Cd-S = 2.509 Angstrom) and to two chloride ions at distances 2.545 and 2.518 Angstrom. When heated in air or in an inert atmosphere 1 undergoes a complex degradation process which was studied in situ by simultaneous TG/DTA as well as by EGA-FTIR. The gaseous species evolved include NH3, HCl, H2NCN, HNCS and CS2, which upon oxidation yield also HCN, SO2, COS and CO2. In the solid residue, NH4CdCl3 and CdS were detected by X-ray diffraction, Elemental and XPS analyses also indicated the presence of Cl and N as well as some carbon residue. The results of the thermoanalytical study are not directly applicable to the spray pyrolysis process because of the different experimental conditions, but they nevertheless indicate that it is extremely difficult to prepare impurity-free CdS. The formation of HCN, not detected earlier, should also be taken into account when designing the process parameters and safety measures

Photoluminescence of spray pyrolysis deposited ZnO nanorods

Photoluminescence of highly structured ZnO layers comprising well-shaped hexagonal rods is presented. The ZnO rods (length 500-1,000 nm, diameter 100-300 nm) were grown in air onto a preheated soda-lime glass (SGL) or ITO/SGL substrate by low-cost chemical spray pyrolysis method using zinc chloride precursor solutions and growth temperatures in the range of 450-550°C. We report the effect of the variation in deposition parameters (substrate type, growth temperature, spray rate, solvent type) on the photoluminescence properties of the spray-deposited ZnO nanorods. A dominant near band edge (NBE) emission is observed at 300 K and at 10 K. High-resolution photoluminescence measurements at 10 K reveal fine structure of the NBE band with the dominant peaks related to the bound exciton transitions. It is found that all studied technological parameters affect the excitonic photoluminescence in ZnO nanorods

Influence of Post-UV/Ozone Treatment of Ultrasonic-Sprayed Zirconium Oxide Dielectric Films for a Low-Temperature Oxide Thin Film Transistor

UID/CTM/50025/2019 PTDC/CTM-NAN/5172/2014 PTDC/NAN-MAT/32558/2017 project IUT194 ERC-StG-2014 GA 640598Solution-processed metal oxides require a great deal of thermal budget in order to achieve the desired film properties. Here, we show that the deposition temperature of sprayed zirconium oxide (ZrOx) thin film can be lowered by exposing the film surface to an ultraviolet (UV) ozone treatment at room temperature. Atomic force microscopy reveals a smooth and uniform film with the root mean square roughness reduced from ~ 0.63 nm (UVO-O) to ~ 0.28 nm (UVO-120) in the UV–ozone treated ZrOx films. X-ray photoelectron spectroscopy analysis indicates the formation of a Zr–O network on the surface film, and oxygen vacancy is reduced in the ZrOx lattice by increasing the UV–ozone treatment time. The leakage current density in Al/ZrOx/p-Si structure was reduced by three orders of magnitude by increasing the UV-ozone exposure time, while the capacitance was in the range 290–266 nF/cm2, corresponding to a relative permittivity (k) in the range 5.8–6.6 at 1 kHz. An indium gallium zinc oxide (IGZO)-based thin film transistor, employing a UV-treated ZrOx gate dielectric deposited at 200 °C, exhibits negligible hysteresis, an Ion/Ioff ratio of 104, a saturation mobility of 8.4 cm2 V−1S−1, a subthreshold slope of 0.21 V.dec−1, and a Von of 0.02 V. These results demonstrate the potentiality of low-temperature sprayed amorphous ZrOx to be applied as a dielectric in flexible and low-power-consumption oxide electronics.publishersversionpublishe

Effects of different needles and substrates on CuInS2 deposited by electrostatic spray deposition

Copper indium disulphide (CuInS2) thin films were deposited using the electrostatic spray deposition method. The effects of applied voltage and solution flow rate on the aerosol cone shape, film composition, surface morphology and current conversion were investigated. The effect of aluminium substrates and transparent fluorine doped tin oxide (SnO2:F) coated glass substrates on the properties of as-deposited CuInS2 films were analysed. An oxidation process occurs during the deposition onto the metallic substrates which forms an insulating layer between the photoactive film and substrate. The effects of two different spray needles on the properties of the as-deposited films were also studied. The results reveal that the use of a stainless steel needle results in contamination of the film due to the transfer of metal impurities through the spray whilst this is not seen for the glass needle. The films were characterised using a number of different analytical techniques such as X-ray diffraction, scanning electron microscopy, Rutherford back-scattering and secondary ion mass spectroscopy and opto-electronic measurements

Low processing temperatures explored in Sb2S3 solar cells by close-spaced sublimation and analysis of bulk and interface related defects

This study was funded by the Estonian Research Council project PRG627 “Antimony chalcogenide thin films for next-generation semi-transparent solar cells applicable in electricity producing windows”, the Estonian Research Council project PSG689 “Bismuth Chalcogenide Thin-Film Disruptive Green Solar Technology for Next Generation Photovoltaics”, the Estonian Centre of Excellence project TK141 (TAR16016EK) “Advanced materials and high-technology devices for energy recuperation systems”, and the European Union's Horizon 2020 ERA Chair project 5GSOLAR (grant agreement No. 952509). The article is based upon work from COST Action Research and International Networking project "Emerging Inorganic Chalcogenides for Photovoltaics (RENEW-PV)," CA21148, supported by COST (European Cooperation in Science and Technology); Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD 01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2.Antimony trisulfide (Sb2S3) is a promising photovoltaic absorber, which has so far been fabricated mainly by chemical deposition methods. Despite its aptness for congruent sublimation, less research efforts have been made on low-temperature Sb2S3 processing by physical methods. In this regard, recent studies show large variation in the processing temperature of Sb2S3 films, which overall brings into question the need for higher substrate temperatures (>350 °C). Furthermore, in-depth analysis of defect structure of Sb2S3 employing temperature-dependent admittance spectroscopy (TAS) and photoluminescence (PL) remains largely unexplored. In this work, we systematically study the effect of close-spaced sublimation (CSS) substrate temperature on Sb2S3 absorber growth, employing a wide temperature range of 240–400 °C. Temperatures above 320 °C caused cracking phenomena in the Sb2S3 absorber film, proving the unviability of higher processing temperatures. CSS processing temperature of 300 °C was found optimal, producing crack-free Sb2S3 films with increased presence of (hk1) planes, and achieving the best CdS/Sb2S3 device with photoconversion efficiency of 3.8%. TAS study revealed two deep defects with activation energies of 0.32 eV and 0.37 eV. Low-temperature PL measurement revealed a band-to-band emission at 1.72 eV and a broad band peaked at 1.40 eV, which was assigned to a donor-acceptor pair recombination. Temperature-dependent I-V analysis showed that recombination at CdS–Sb2S3 interface remains a large limitation for the device efficiency. --//-- R. Krautmann, N. Spalatu, R. Josepson, R. Nedzinskas, R. Kondrotas, R. Gržibovskis, A. Vembris, M. Krunks, I. Oja Acik, Low processing temperatures explored in Sb2S3 solar cells by close-spaced sublimation and analysis of bulk and interface related defects, Solar Energy Materials and Solar Cells, Volume 251, 2023, 112139, ISSN 0927-0248, https://doi.org/10.1016/j.solmat.2022.112139. (https://www.sciencedirect.com/science/article/pii/S0927024822005566) Published under the CC BY licence.Estonian Research Council project PRG627; Estonian Research Council project PSG689; Estonian Centre of Excellence project TK141 (TAR16016EK); European Union's Horizon 2020 ERA Chair project 5GSOLAR (grant agreement No. 952509; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD 01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART2

Study of Zn O,S Films grown by Aerosol Assisted Chemical Vapour Deposition and their Application as Buffer Layers in Cu In,Ga S,Se 2 Solar Cells

To reduce the use of toxic and expensive elements in chalcopyrite thin film solar cells, materials such as cadmium or indium used in buffer layers need to be substituted. Zn O,S is considered to be a potential buffer layer material when deposited with a fast and inexpensive method. Zn O,S layers have been prepared by aerosol assisted chemical vapour deposition AACVD technique. AACVD technique is a simple non vacuum process where the thin film deposition temperatures do not exceed 250 C. 10 mM spray solution was made by dissolving zinc II acetylacetonate monohydrate in ethanol. The films were grown on Mo substrate at 225 C film growth temperature . The effect of deposition parameters spray solution concentration, N2 flow rate, H2S flow rate on Zn O,S thin film properties were studied with SEM and XRD. Thereupon optimizing the deposition parameters, homogeneous and compact Zn O,S thin films were obtained and the films were employed in the chalcopyrite thin film solar cell structure by growing films on Cu In,Ga S,Se 2 substrates industrially produced by BOSCH Solar CISTech GmbH. The resulting cells were studied using current voltage and quantum efficiency analysis and compared with solar cell references that include In2S3 and CdS as buffer layer deposited by ion layer gas reaction and chemical bath deposition, respectively. The best output of the solar cell containing Zn O,S as buffer layer and without intrinsic ZnO under standard test conditions AM 1.5G, 100 mW cm2, 25 C is Voc 573 mV, Jsc 39.2 mA cm2, FF 68.4 and efficiency of 15.4 being slightly better than the In2S3 or CdS containing solar cell reference

Application of ultrasonic sprayed zirconium oxide dielectric in zinc tin oxide-based thin film transistor

project IUT194 UID/CTM/50025/2019 project TK141 Grant Agreement 17161 SFRH/BD/116047/2016Solution processing of metal oxides has been the focal point of interest for many researchers mainly because of the cost effectiveness and improved properties of metal oxides. However, achieving uniform and high-quality film deposition has been a recurring challenge using various wet-chemical techniques. Herein, we report a fully solution-based fabrication process exploiting both the ultrasonic spray pyrolysis (USP) and spin coating techniques owing to their simplicity, high degree of freedom for mixing metal oxide precursor salt, and larger area deposition. An amorphous zirconium oxide (ZrOx) dielectric and zinc tin oxide (ZTO) semiconductor were deposited, respectively. The dielectric characteristics of the ZrOx thin films were accessed by fabricating MIS-devices for the samples deposited at 200 °C and 400 °C, which exhibited a capacitance of 0.35 and 0.67 μF cm−2 at 100 kHz and relative permittivity of 8.5 and 22.7, respectively. The ZrOx thin film was then integrated as the gate dielectric layer in ZTO solution-processed thin film transistors, exhibiting a high electrical performance with low hysteresis (−0.18 V), high on/off current ratio of 106 orders of magnitude, saturation mobility of 4.6 cm2 V s−1, subthreshold slope of 0.25 V dec−1, and operating at a low voltage window of 3 V. Based on these results, the as-fabricated ZTO/ZrOx TFT opens the potential application of solution-processed transistors for low-cost electronic devices.publishersversionpublishe

ZnO Nanorods via Spray Deposition of Solutions Containing Zinc Chloride and Thiocarbamide

In this work we present the results on formation of ZnO nanorods prepared by spray of aqueous solutions containing ZnCl2and thiocarbamide (tu) at different molar ratios. It has been observed that addition of thiocarbamide into the spray solution has great impact on the size, shape and phase composition of the ZnO crystals. Obtained layers were characterized by scanning electron microscopy (SEM) equipped with energy selected backscattered electron detection system (ESB), X-ray diffraction (XRD) and photoluminescence spectroscopy (PL). Small addition of thiocarbamide into ZnCl2solution (ZnCl2:tu = 1:0.25) supports development of significantly thinner ZnO nanorods with higher aspect ratio compared to those obtained from ZnCl2solution. Diameter of ZnO rods decreases from 270 to 100 nm and aspect ratio increases from ∼2.5 to 12 spraying ZnCl2and ZnCl2:tu solutions, respectively. According to XRD, well crystallized (002) orientated pure wurtzite ZnO crystals have been formed. However, tiny ‘spot’—like formations of ZnS were detected on the side planes of hexagonal rods prepared from the thiocarbamide containing solutions. Being adsorbed on the side facets of the crystals ZnS inhibits width growth and promotes longitudinalc-axis growth

4.9% Efficient Sb2S3 Solar Cells from Semitransparent Absorbers with Fluorene-Based Thiophene-Terminated Hole Conductors

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