Quantum criticality in Kondo quantum dot coupled to helical edge states of interacting 2D topological insulators

We investigate theoretically the quantum phase transition (QPT) between the one-channel Kondo (1CK) and two-channel Kondo (2CK) fixed points in a quantum dot coupled to helical edge states of interacting 2D topological insulators (2DTI) with Luttinger parameter $0<K<1$. The model has been studied in Ref. 21, and was mapped onto an anisotropic two-channel Kondo model via bosonization. For K<1, the strong coupling 2CK fixed point was argued to be stable for infinitesimally weak tunnelings between dot and the 2DTI based on a simple scaling dimensional analysis[21]. We re-examine this model beyond the bare scaling dimension analysis via a 1-loop renormalization group (RG) approach combined with bosonization and re-fermionization techniques near weak-coupling and strong-coupling (2CK) fixed points. We find for K -->1 that the 2CK fixed point can be unstable towards the 1CK fixed point and the system may undergo a quantum phase transition between 1CK and 2CK fixed points. The QPT in our model comes as a result of the combined Kondo and the helical Luttinger physics in 2DTI, and it serves as the first example of the 1CK-2CK QPT that is accessible by the controlled RG approach. We extract quantum critical and crossover behaviors from various thermodynamical quantities near the transition. Our results are robust against particle-hole asymmetry for 1/2<K<1.Comment: 17 pages, 9 figures, more details added, typos corrected, revised Sec. IV, V, Appendix A and

Tunable few electron quantum dots in InAs nanowires

Quantum dots realized in InAs are versatile systems to study the effect of spin-orbit interaction on the spin coherence, as well as the possibility to manipulate single spins using an electric field. We present transport measurements on quantum dots realized in InAs nanowires. Lithographically defined top-gates are used to locally deplete the nanowire and to form tunneling barriers. By using three gates, we can form either single quantum dots, or two quantum dots in series along the nanowire. Measurements of the stability diagrams for both cases show that this method is suitable for producing high quality quantum dots in InAs.Comment: 8 pages, 4 figure

Anderson impurity in a semiconductor

We consider an Anderson impurity model in which the locally correlated orbital is coupled to a host with a gapped density of states. Single-particle dynamics are studied, within a perturbative framework that includes both explicit second-order perturbation theory and self-consistent perturbation theory to all orders in the interaction. Away from particle-hole symmetry the system is shown to be a generalized Fermi liquid (GFL) in the sense of being perturbatively connectable to the non-interacting limit; and the exact Friedel sum rule for the GFL phase is obtained. We show by contrast that the particle-hole symmetric point of the model is not perturbatively connected to the non-interacting limit, and as such is a non-Fermi liquid for all non-zero gaps. Our conclusions are in agreement with NRG studies of the problem.Comment: 7 pages, 4 figure

Probing of the Kondo peak by the impurity charge measurement

We consider the real-time dynamics of the Kondo system after the local probe of the charge state of the magnetic impurity. Using the exactly solvable infinite-degeneracy Anderson model we find explicitly the evolution of the impurity charge after the measurement.Comment: 4 pages, 1 eps figure, revte

Zero-bias conductance in carbon nanotube quantum dots

We present numerical renormalization group calculations for the zero-bias conductance of quantum dots made from semiconducting carbon nanotubes. These explain and reproduce the thermal evolution of the conductance for different groups of orbitals, as the dot-lead tunnel coupling is varied and the system evolves from correlated Kondo behavior to more weakly correlated regimes. For integer fillings $N=1,2,3$ of an SU(4) model, we find universal scaling behavior of the conductance that is distinct from the standard SU(2) universal conductance, and concurs quantitatively with experiment. Our results also agree qualitatively with experimental differential conductance maps.Comment: 4 pages, 5 figure

Single-electron tunneling in InP nanowires

We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor-liquid-solid process. Our InP wires are n-type doped with diameters in the 40-55 nm range and lengths of several microns. After being deposited on an oxidized Si substrate, wires are contacted individually via e-beam fabricated Ti/Al electrodes. We obtain contact resistances as low as ~10 kOhm, with minor temperature dependence. The distance between the electrodes varies between 0.2 and 2 micron. The electron density in the wires is changed with a back gate. Low-temperature transport measurements show Coulomb-blockade behavior with single-electron charging energies of ~1 meV. We also demonstrate energy quantization resulting from the confinement in the wire.Comment: 4 pages, 3 figure

Resonant Tunneling through Linear Arrays of Quantum Dots

We theoretically investigate resonant tunneling through a linear array of quantum dots with subsequent tunnel coupling. We consider two limiting cases: (i) strong Coulomb blockade, where only one extra electron can be present in the array (ii) limit of almost non-interacting electrons. We develop a density matrix description that incorporates the coupling of the dots to reservoirs. We analyze in detail the dependence of the stationary current on the electron energies, tunnel matrix elements and rates, and on the number of dots. We describe interaction and localization effects on the resonant current. We analyze the applicability of the approximation of independent conduction channels. We find that this approximation is not valid when at least one of the tunnel rates to the leads is comparable to the energy splitting of the states in the array. In this case the interference of conduction processes through different channels suppresses the current.Comment: 12 pages, 5 figure

Quantum transport in carbon nanotubes

Carbon nanotubes are a versatile material in which many aspects of condensed matter physics come together. Recent discoveries, enabled by sophisticated fabrication, have uncovered new phenomena that completely change our understanding of transport in these devices, especially the role of the spin and valley degrees of freedom. This review describes the modern understanding of transport through nanotube devices. Unlike conventional semiconductors, electrons in nanotubes have two angular momentum quantum numbers, arising from spin and from valley freedom. We focus on the interplay between the two. In single quantum dots defined in short lengths of nanotube, the energy levels associated with each degree of freedom, and the spin-orbit coupling between them, are revealed by Coulomb blockade spectroscopy. In double quantum dots, the combination of quantum numbers modifies the selection rules of Pauli blockade. This can be exploited to read out spin and valley qubits, and to measure the decay of these states through coupling to nuclear spins and phonons. A second unique property of carbon nanotubes is that the combination of valley freedom and electron-electron interactions in one dimension strongly modifies their transport behaviour. Interaction between electrons inside and outside a quantum dot is manifested in SU(4) Kondo behavior and level renormalization. Interaction within a dot leads to Wigner molecules and more complex correlated states. This review takes an experimental perspective informed by recent advances in theory. As well as the well-understood overall picture, we also state clearly open questions for the field. These advances position nanotubes as a leading system for the study of spin and valley physics in one dimension where electronic disorder and hyperfine interaction can both be reduced to a very low level.Comment: In press at Reviews of Modern Physics. 68 pages, 55 figure

Measurement of g-factor tensor in a quantum dot and disentanglement of exciton spins

We perform polarization-resolved magneto-optical measurements on single InAsP quantum dots embedded in an InP nanowire. In order to determine all elements of the electron and hole $g$-factor tensors, we measure in magnetic field with different orientations. The results of these measurements are in good agreement with a model based on exchange terms and Zeeman interaction. In our experiment, polarization analysis delivers a powerful tool that not only significantly increases the precision of the measurements, but also enables us to probe the exciton spin state evolution in magnetic fields. We propose a disentangling scheme of heavy-hole exciton spins enabling a measurement of the electron spin $T_2$ time

Spatially resolved manipulation of single electrons in quantum dots using a scanned probe

The scanning metallic tip of a scanning force microscope was coupled capacitively to electrons confined in a lithographically defined gate-tunable quantum dot at a temperature of 300 mK. Single electrons were made to hop on or off the dot by moving the tip or by changing the tip bias voltage owing to the Coulomb-blockade effect. Spatial images of conductance resonances map the interaction potential between the tip and individual electronic quantum dot states. Under certain conditions this interaction is found to contain a tip-voltage induced and a tip-voltage independent contribution.Comment: 4 pages, 4 figure