MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors)

The fall and holocaust of Andalusian Muslims (1490-1614 CE/896-1023AH) : lesson of history which always will be repeated if it is not learned or became neglected

The Holocaust of Muslims ofAI-Andalus is one of the darkest pages of history of thc Christian Europe and simultaneously one of the most tragic periods in the history of the Islamic West. This era of the planned, sustained and systematically executed policy of total eradication of Islam from the southwestern Europe was authorized by the "Renaissance" popes and the European Roman-Catholic monarchs after the surrender of the last Muslim state of Granada in 1492 CE/897A

Static muscle strength trained and untrained of female students

Static muscle strength is one of the defining characteristics of human motor potential. Standard terms and exclude the impact of short-term measurement techniques for motion and strain measurements, hence the widespread use of Mm measurements in the assessment of fitness of both trained and untrained, healthy subjects and patients undergoing a variety of reasons the process of rehabilitation. The paper deals with static muscle strength (dynamometry back of the hand) of female students trained (n = 38) and untrained (n = 213). Examined relationships between individual measurements and body weight in both groups, the degree of asymmetry of the palmar and the differences in the level of power (at the level of the absolute and relative terms) between the groups. Disclosed according to form the basis of their conclusions

Dynamic Load Balancing Based on Applications Global States Monitoring

8 pages à paraîtreInternational audienceThe paper presents how to use a special novel distributed program design framework with evolved global control mechanisms to assure processor load balancing during execution of application programs. The new framework supports a programmer with an API and GUI for automated graphical design of program execution control based on global application states monitoring. The framework provides highlevel distributed control primitives at process level and a special control infrastructure for global asynchronous execution control at thread level. Both kinds of control assume observations of current multicore processor performance and communication throughput enabled in the executive distributed system. Methods for designing processor load balancing control based on a system of program and system properties metrics and computational data migration between application executive processes is presented and assessed by experiments with execution of graph representations of distributed programs

Analysis of slurry flow in chemical-mechanical polishing

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2005.Includes bibliographical references (leaves 110-112).Chemical-Mechanical Polishing (CMP) is one of the enabling processes used in the manufacture of semiconductor chips. In the relentless progress to make computer chips faster, smaller, and cheaper, the CMP process plays a prominent role. One of its limitations, however, is non-uniform polishing rate at the die and wafer scales. In this thesis, an innovative CMP machine configuration is proposed to minimize wafer-scale non-uniformity. The new face-up machine lowers wafer-scale non-uniformity by minimizing over-polishing of any particular area. The thesis discusses the kinematics and design considerations of this machine. Additionally, this thesis develops an analytical model for slurry flow in CMP in two steps. First, a simple but useful method of estimating the effective gap between the wafer and the pad during polishing is developed. The method uses pressurized fluid flow and an analytical model to estimate the effective gap between the wafer and the pad. Second, this effective gap is used in the Couette model that describes the slurry behavior in CMP. The Couette model shows that rotational speeds of the wafer and pad, the effective gap, and the sizes of the wafer and pad dictate the slurry flow rate and flow pattern in both conventional CMP and the new face-up CMP. The Couette model can be used to estimate the slurry flow rate whenever the process parameters are changed.by Krzysztof D. Kopanski.S.M

The connection between Ma`ani Nahwi in Arabic and Modistae in Latin: an approach to the history of linguistic studies

The research emphasizes on the connection between the Arabic concept of ma`ani nahwi and modistae in Latin. In order to identify this connection, the researcher has to elaborate on the role of Aristotle’s categories in influencing the concept of modistae in the Middle Ages first. The paper will then reevaluate the influence of Muslim philosophers such as al-Farabi (c.870-c.950 AD), Avicenna (980-1037 AD) and Averoes (c.1126-c.1198 AD) in Latin and clarify the role of Jurjani (d.1078 AD) in introducing his concept of nazm towards ma`ani nahwi. The result of the research will also enhance the understanding of the relationship between syntax and semantic which has not been effectively clarified within the framework of traditional Arabic grammatical theory

Ultrahigh-temperature microwave annealing of Al⁺- and P⁺-implanted 4H-SiC

In this work, an ultrafast solid-state microwaveannealing has been performed, in the temperature range of 1700–2120°C on Al⁺- and P⁺-implanted 4H-SiC. The solid-state microwave system used in this study is capable of raising the SiC sample temperatures to extremely high values, at heating rates of ∼600°C∕s. The samples were annealed for 5–60s in a pure nitrogen ambient. Atomic force microscopy performed on the annealed samples indicated a smooth surface with a rms roughness of 1.4nm for 5×5μm² scans even for microwaveannealing at 2050°C for 30s. Auger sputter profiling revealed a <7nm thick surface layer composed primarily of silicon, oxygen, and nitrogen for the samples annealed in N₂, at annealing temperatures up to 2100°C. X-ray photoelectron spectroscopy revealed that this surface layer is mainly composed of silicon oxide and silicon nitride. Secondary ion mass spectrometry depth profiling confirmed almost no dopant in diffusion after microwaveannealing at 2100°C for 15s. However, a sublimation of ∼100nm of the surface SiC layer was observed for 15sannealing at 2100°C. Rutherford backscattering spectra revealed a lattice damage-free SiC material after microwaveannealing at 2050°C for 15s, with scattering yields near the virgin SiC material. Van der Pauw–Hall measurements have revealed sheet resistance values as low as 2.4kΩ∕□ for Al⁺-implanted material annealed at 2100°C for 15s and 14Ω∕□ for the P+-implanted material annealed at 1950°C for 30s. The highest electron and hole mobilities measured in this work were 100 and 6.8cm2/Vs, respectively, for the P⁺- and Al⁺-implanted materials.The GMU work is supported by Army Research Of- fice Dr. Prater under Grant No. W911NF-04-1-0428 and a subcontract from LT Technologies under NSF SBIR Grant No. 0539321