An experimental and analytical investigation of proprotor whirl flutter

The results of an experimental parametric investigation of whirl flutter are presented for a model consisting of a windmilling propeller-rotor, or proprotor, having blades with offset flapping hinges mounted on a rigid pylon with flexibility in pitch and yaw. The investigation was motivated by the need to establish a large data base from which to assess the predictability of whirl flutter for a proprotor since some question has been raised as to whether flutter in the forward whirl mode could be predicted with confidence. To provide the necessary data base, the parametric study included variation in the pylon pitch and yaw stiffnesses, flapping hinge offset, and blade kinematic pitch-flap coupling over a large range of advance ratios. Cases of forward whirl flutter and of backward whirl flutter are documented. Measured whirl flutter characteristics were shown to be in good agreement with predictions from two different linear stability analyses which employed simple, two dimensional, quasi-steady aerodynamics for the blade loading. On the basis of these results, it appears that proprotor whirl flutter, both forward and backward, can be predicted

Nonuniqueness and derivative discontinuities in density-functional theories for current-carrying and superconducting systems

Current-carrying and superconducting systems can be treated within density-functional theory if suitable additional density variables (the current density and the superconducting order parameter, respectively) are included in the density-functional formalism. Here we show that the corresponding conjugate potentials (vector and pair potentials, respectively) are {\it not} uniquely determined by the densities. The Hohenberg-Kohn theorem of these generalized density-functional theories is thus weaker than the original one. We give explicit examples and explore some consequences.Comment: revised version (typos corrected, some discussion added) to appear in Phys. Rev.

Total energy global optimizations using non orthogonal localized orbitals

An energy functional for orbital based $O(N)$ calculations is proposed, which depends on a number of non orthogonal, localized orbitals larger than the number of occupied states in the system, and on a parameter, the electronic chemical potential, determining the number of electrons. We show that the minimization of the functional with respect to overlapping localized orbitals can be performed so as to attain directly the ground state energy, without being trapped at local minima. The present approach overcomes the multiple minima problem present within the original formulation of orbital based $O(N)$ methods; it therefore makes it possible to perform $O(N)$ calculations for an arbitrary system, without including any information about the system bonding properties in the construction of the input wavefunctions. Furthermore, while retaining the same computational cost as the original approach, our formulation allows one to improve the variational estimate of the ground state energy, and the energy conservation during a molecular dynamics run. Several numerical examples for surfaces, bulk systems and clusters are presented and discussed.Comment: 24 pages, RevTex file, 5 figures available upon reques

Theory of valley-orbit coupling in a Si/SiGe quantum dot

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and (most importantly for valley coupling) the small local tilt of the quantum well interface away from the crystallographic axes. In absence of a tilt, valley splitting occurs only between pairs of states with the same orbital quantum numbers. However, tilting is ubiquitous in conventional silicon heterostructures, leading to valley-orbit coupling. In this context, "valley splitting" is no longer a well defined concept, and the quantity of merit for qubit applications becomes the ground state gap. For typical dots used as qubits, a rich energy spectrum emerges, as a function of magnetic field, tilt angle, and orbital quantum number. Numerical and analytical solutions are obtained for the ground state gap and for the mixing fraction between the ground and excited states. This mixing can lead to valley scattering, decoherence, and leakage for Si spin qubits.Comment: 18 pages, including 4 figure

Numerical Analysis of Three-dimensional Acoustic Cloaks and Carpets

We start by a review of the chronology of mathematical results on the Dirichlet-to-Neumann map which paved the way towards the physics of transformational acoustics. We then rederive the expression for the (anisotropic) density and bulk modulus appearing in the pressure wave equation written in the transformed coordinates. A spherical acoustic cloak consisting of an alternation of homogeneous isotropic concentric layers is further proposed based on the effective medium theory. This cloak is characterised by a low reflection and good efficiency over a large bandwidth for both near and far fields, which approximates the ideal cloak with a inhomogeneous and anisotropic distribution of material parameters. The latter suffers from singular material parameters on its inner surface. This singularity depends upon the sharpness of corners, if the cloak has an irregular boundary, e.g. a polyhedron cloak becomes more and more singular when the number of vertices increases if it is star shaped. We thus analyse the acoustic response of a non-singular spherical cloak designed by blowing up a small ball instead of a point, as proposed in [Kohn, Shen, Vogelius, Weinstein, Inverse Problems 24, 015016, 2008]. The multilayered approximation of this cloak requires less extreme densities (especially for the lowest bound). Finally, we investigate another type of non-singular cloaks, known as invisibility carpets [Li and Pendry, Phys. Rev. Lett. 101, 203901, 2008], which mimic the reflection by a flat ground.Comment: Latex, 21 pages, 7 Figures, last version submitted to Wave Motion. OCIS Codes: (000.3860) Mathematical methods in physics; (260.2110) Electromagnetic theory; (160.3918) Metamaterials; (160.1190) Anisotropic optical materials; (350.7420) Waves; (230.1040) Acousto-optical devices; (160.1050) Acousto-optical materials; (290.5839) Scattering,invisibility; (230.3205) Invisibility cloak

Time Dependent Floquet Theory and Absence of an Adiabatic Limit

Quantum systems subject to time periodic fields of finite amplitude, lambda, have conventionally been handled either by low order perturbation theory, for lambda not too large, or by exact diagonalization within a finite basis of N states. An adiabatic limit, as lambda is switched on arbitrarily slowly, has been assumed. But the validity of these procedures seems questionable in view of the fact that, as N goes to infinity, the quasienergy spectrum becomes dense, and numerical calculations show an increasing number of weakly avoided crossings (related in perturbation theory to high order resonances). This paper deals with the highly non-trivial behavior of the solutions in this limit. The Floquet states, and the associated quasienergies, become highly irregular functions of the amplitude, lambda. The mathematical radii of convergence of perturbation theory in lambda approach zero. There is no adiabatic limit of the wave functions when lambda is turned on arbitrarily slowly. However, the quasienergy becomes independent of time in this limit. We introduce a modification of the adiabatic theorem. We explain why, in spite of the pervasive pathologies of the Floquet states in the limit N goes to infinity, the conventional approaches are appropriate in almost all physically interesting situations.Comment: 13 pages, Latex, plus 2 Postscript figure

Ab initio Study of Misfit Dislocations at the SiC/Si(001) Interface

The high lattice mismatched SiC/Si(001) interface was investigated by means of combined classical and ab initio molecular dynamics. Among the several configurations analyzed, a dislocation network pinned at the interface was found to be the most efficient mechanism for strain relief. A detailed description of the dislocation core is given, and the related electronic properties are discussed for the most stable geometry: we found interface states localized in the gap that may be a source of failure of electronic devices

Physical mechanisms of interface-mediated intervalley coupling in Si

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.Comment: 4 pages, revised versio

Electron Localization in the Insulating State

The insulating state of matter is characterized by the excitation spectrum, but also by qualitative features of the electronic ground state. The insulating ground wavefunction in fact: (i) sustains macroscopic polarization, and (ii) is localized. We give a sharp definition of the latter concept, and we show how the two basic features stem from essentially the same formalism. Our approach to localization is exemplified by means of a two--band Hubbard model in one dimension. In the noninteracting limit the wavefunction localization is measured by the spread of the Wannier orbitals.Comment: 5 pages including 3 figures, submitted to PR

Ab initio studies of electronic structure of defects in PbTe

Understanding the detailed electronic structure of deep defect states in narrow band-gap semiconductors has been a challenging problem. Recently, self-consistent ab initio calculations within density functional theory (DFT) using supercell models have been successful in tackling this problem. In this paper, we carry out such calculations in PbTe, a well-known narrow band-gap semiconductor, for a large class of defects: cationic and anionic substitutional impurities of different valence, and cationic and anionic vacancies. For the cationic defects, we study a series of compounds RPb2n-1Te2n, where R is vacancy or monovalent, divalent, or trivalent atom; for the anionic defects, we study compounds MPb2nTe2n-1, where M is vacancy, S, Se or I. We find that the density of states (DOS) near the top of the valence band and the bottom of the conduction band get significantly modified for most of these defects. This suggests that the transport properties of PbTe in the presence of impurities can not be interpreted by simple carrier doping concepts, confirming such ideas developed from qualitative and semi-quantitative arguments