8,901 research outputs found

    Man-systems evaluation of moving base vehicle simulation motion cues

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    A motion cue investigation program is reported that deals with human factor aspects of high fidelity vehicle simulation. General data on non-visual motion thresholds and specific threshold values are established for use as washout parameters in vehicle simulation. A general purpose similator is used to test the contradictory cue hypothesis that acceleration sensitivity is reduced during a vehicle control task involving visual feedback. The simulator provides varying acceleration levels. The method of forced choice is based on the theory of signal detect ability

    Asymptotic solution of a model for bilayer organic diodes and solar cells

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    The current voltage characteristics of an organic semiconductor diode made by placing together two materials with dissimilar electron affinities and ionisation potentials is analysed using asymptotic methods. An intricate boundary layer structure is examined. We find that there are three regimes for the total current passing through the diode. For reverse bias and moderate forward bias the dependency of the voltage on the current is similar to the behaviour of conventional inorganic semiconductor diodes predicted by the Shockley equation and are governed by recombination at the interface of the materials. There is then a narrow range of currents where the behaviour undergoes a transition. Finally for large forward bias the behaviour is different with the current being linear in voltage and is primarily controlled by drift of charges in the organic layers. The size of the interfacial recombination rate is critical in determining the small range of current where there is rapid transition between the two main regimes. The extension of the theory to organic solar cells is discussed and the analogous current voltage curves derived in the regime of interest

    Scaling and Universality in Continuous Length Combinatorial Optimization

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    We consider combinatorial optimization problems defined over random ensembles, and study how solution cost increases when the optimal solution undergoes a small perturbation delta. For the minimum spanning tree, the increase in cost scales as delta^2; for the mean-field and Euclidean minimum matching and traveling salesman problems in dimension d>=2, the increase scales as delta^3; this is observed in Monte Carlo simulations in d=2,3,4 and in theoretical analysis of a mean-field model. We speculate that the scaling exponent could serve to classify combinatorial optimization problems into a small number of distinct categories, similar to universality classes in statistical physics.Comment: 5 pages; 3 figure

    The Glassy Potts Model

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    We introduce a Potts model with quenched, frustrated disorder, that enjoys of a gauge symmetry that forbids spontaneous magnetization, and allows the glassy phase to extend from TcT_c down to T=0. We study numerical the 4 dimensional model with q=4q=4 states. We show the existence of a glassy phase, and we characterize it by studying the probability distributions of an order parameter, the binder cumulant and the divergence of the overlap susceptibility. We show that the dynamical behavior of the system is characterized by aging.Comment: 4 pages including 4 (color) ps figures (all on page 4

    Advances in large-diameter liquid encapsulated Czochralski GaAs

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    The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates

    High purity low dislocation GaAs single crystals

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    Recent advances in GaAs bulk crystal growth using the LEC (liquid encapsulated Czochralski) technique are described. The dependence of the background impurity concentration and the dislocation density distribution on the materials synthesis and growth conditions were investigated. Background impurity concentrations as low as 4 x 10 to the 15th power were observed in undoped LEC GaAs. The dislocation density in selected regions of individual ingots was very low, below the 3000 cm .3000/sq cm threshold. The average dislocation density over a large annular ring on the wafers fell below the 10000/sq cm level for 3 inch diameter ingots. The diameter control during the program advanced to a diameter variation along a 3 inch ingot less than 2 mm

    Universal low-temperature tricritical point in metallic ferromagnets and ferrimagnets

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    An earlier theory of the quantum phase transition in metallic ferromagnets is revisited and generalized in three ways. It is shown that the mechanism that leads to a fluctuation-induced first-order transition in metallic ferromagnets with a low Curie temperature is valid, (1) irrespective of whether the magnetic moments are supplied by the conduction electrons or by electrons in another band, (2) for ferromagnets in the XY and Ising universality classes as well as for Heisenberg ferromagnets, and (3) for ferrimagnets as well as for ferromagnets. This vastly expands the class of materials for which a first-order transition at low temperatures is expected, and it explains why strongly anisotropic ferromagnets, such as UGe2, display a first-order transition as well as Heisenberg magnets.Comment: 11pp, 2 fig

    Earth orbital teleoperator mobility system evaluation program

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    The proximity translation and final docking of the space teleoperator evaluation vehicle (STEV) with large mass and small mass satellites was studied. Operations that may be performed by the STEV during the shuttle experiments are approximated

    Numerical study of a short-range p-spin glass model in three dimensions

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    In this work we study numerically a short range p-spin glass model in three dimensions. The behaviour of the model appears to be remarkably different from mean field predictions. In fact it shares some features typical of models with full replica-symmetry breaking (FRSB). Nevertheless, we believe that the transition that we study is intrinsically different from the FRSB and basically due to non-perturbative contributions. We study both the statics and the dynamics of the system which seem to confirm our conjectures.Comment: 20 pages, 15 figure
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