Coulomb oscillations based on band-to-band tunneling in a degenerately doped silicon metal-oxide-semiconductor field-effect transistor

The Coulomb oscillations based on band-to-band tunneling through a valence band in silicon metal-oxide-semiconductor field-effect-transistors were discussed. It was found that the formation of tunnel barries and a quantum dot in a single-electron transistor structure originated from two p+ - p+ tunnel junctions and a p+ -doped channel with mesoscopic dimension, respectively. At liquid nitrogen temperature, the Coulomb-blockade oscillations with multiple peaks were also observed. Analysis shows that the single-electron charging effect based on band-to-band tunneling was confirmed using the electrical and thermal characterization of the quantum dots.open2

Fabrication of single-electron tunneling transistors with an electrically formed Coulomb island in a silicon-on-insulator nanowire

For the purpose of controllable characteristics, silicon single-electron tunneling transistors with an electrically formed Coulomb island are proposed and fabricated on the basis of the sidewall process technique. The fabricated devices are based on a silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) field effect transistor with them depletion gate. The key fabrication technique consists of two sidewall process techniques. One is the patterning of a uniform SOI nanowire, and the other is the formation of n-doped polysilicon sidewall depletion gates. While the width of a Coulomb island is determined by the width of a SOI nanowire, its length is defined by the separation between two sidewall depletion gates which are formed by a conventional lithographic process combined with the second-sidewall process. These sidewall techniques combine the conventional lithography and process technology, and guaran tee the compatibility with complementary MOS process technology. Moreover, critical dimension depends not on the lithographical limit but on the controllability of chemical vapor deposition and reactive-ion etching. Very uniform weakly p-doped SOI nanowire defined by the sidewall technique effectively suppresses unintentional tunnel junctions formed by the fluctuation of the geometry or dopant in SOI nanowire, and the Coulomb island size dependence of the device characteristics confirms the good controllability. A voltage gain larger than one and the controllability of Coulomb oscillation peak position are also successfully demonstrated, which are essential conditions for the integration of a single-electron tunneling transistor circuit. Further miniaturization and optimization of the proposed device will make room temperature designable single-electron tunneling transistors possible in the foreseeable future.open101

Evaluation of effectiveness of fault-tolerant techniques in a digital instrumentation and control system with a fault injection experiment

Recently, instrumentation and control (I&C) systems in nuclear power plants have undergone digitalization. Owing to the unique characteristics of digital I&C systems, the reliability analysis of digital systems has become an important element of probabilistic safety assessment (PSA). In a reliability analysis of digital systems, fault-tolerant techniques and their effectiveness must be considered. A fault injection experiment was performed on a safety-critical digital I&C system developed for nuclear power plants to evaluate the effectiveness of fault-tolerant techniques implemented in the target system. A software-implemented fault injection in which faults were injected into the memory area was used based on the assumption that all faults in the target system will be reflected in the faults in the memory. To reduce the number of required fault injection experiments, the memory assigned to the target software was analyzed. In addition, to observe the effect of the fault detection coverage of fault-tolerant techniques, a PSA model was developed. The analysis of the experimental result also can be used to identify weak points of fault-tolerant techniques for capability improvement of fault-tolerant techniques

Pharmacokinetics of Amitriptyline Demethylation;A Crossover Study with Single Doses of Amitriptyline and Nortriptyline

A single dose crossover pharmacokinetic study of amitriptyline and nortriptyline was done to find out the extent of first-pass metabolism to nortriptyline after amitripyline administration, and the contribution of nortriptyline during amitriptyline therapy. Six healthy male volunteers took part in this study and were given single doses (50 mg) of amitriptyline and nortriptyline at more than three-week intervals. Plasma concentrations of the drugs were measured up to 48 hours. Total area under the plasma concentration-time curve (AUe) of amitriptyline (744.6±258.4 ng/ml·hl was smaller than that of nortriptyline (l497.3±589.8 ng/ml'h), and the mean terminal half-life of amitriptyline (21.8±3.9 hr) was shorter than that of nortriptyline (36.8±5.9 h). The total area under the plasma concentration-time curve of nortriptyline produced by amitriptyline administration was 498.1 ±274.5 ng/ml·h, and the fraction produced by the first-pass of amitriptyline was 33.7 ± 10.5%. From this data, it can be estimated that the average nortriptyline concentration could be about 40% of the total tricyclic antidepressants present in the plasma of patients taking multiple amitriptyline therapy at steady state. About 34% of nortriptyline is produced by first- pass effect during gastrointestinal absorption of amitriptyline to systemic circulation resulting from N-demethylation of amitriptyline in the liver. Then, the rest of the nortriptyline is formed continuously at a rate proportional to the rate of amitriptyline elimination

Band-selective gap opening by a C4-symmetric order in a proximity-coupled heterostructure Sr2VO3FeAs

Complex electronic phases in strongly correlated electron systems are manifested by broken symmetries in the low-energy electronic states. Some mysterious phases, however, exhibit intriguing energy gap opening without an apparent signature of symmetry breaking (e.g., high-TC cuprates and heavy fermion superconductors). Here, we report an unconventional gap opening in a heterostructured, iron-based superconductor Sr2VO3FeAs across a phase transition at T0 ∼150 K. Using angle-resolved photoemission spectroscopy, we identify that a fully isotropic gap opens selectively on one of the Fermi surfaces with finite warping along the interlayer direction. This band selectivity is incompatible with conventional gap opening mechanisms associated with symmetry breaking. These findings, together with the unusual field-dependent magnetoresistance, suggest that the Kondo-type proximity coupling of itinerant Fe electrons to localized V spin plays a role in stabilizing the exotic phase, which may serve as a distinct precursor state for unconventional superconductivity

Short- and Long-Term Results of Triple Valve Surgery: A Single Center Experience

Triple valve surgery is usually complex and carries a reported operative mortality of 13% and 10-yr survival of 61%. We examined surgical results based on our hospital's experience. A total of 160 consecutive patients underwent triple valve surgery from 1990 to 2006. The most common aortic and mitral valve disease was rheumatic disease (82%). The most common tricuspid valve disease was functional regurgitation (80%). Seventy-four percent of the patients were in New York Heart Association (NYHA) class III and IV. Univariate and multivariable analyses were performed to identify predictors of early and late survival. Operative mortality was 6.9% (n=11). Univariate factors associated with mortality included old age, preoperative renal failure, postoperative renal failure, pulmonary complications, and stroke. Of them, postoperative renal failure and stroke were associated with mortality on multivariable analysis. Otherwise, neither tricuspid valve replacement nor reoperation were statistically associated with late mortality. Survival at 5 and 10 yr was 87% and 84%, respectively. Ninety-two percent of the patients were in NYHA class I and II at their most recent follow-up. Ten-year freedom from prosthetic valve endocarditis was 97%; from anticoagulation-related hemorrhage, 82%; from thromboembolism, 89%; and from reoperation, 84%. Postoperative renal failure and stroke were significantly related with operative mortality. Triple valve surgery, regardless of reoperation and tricuspid valve replacement, results in acceptable long-term survival