Can Europium Atoms form Luminescent Centres in Diamond: A combined Theoretical-Experimental Study

The incorporation of Eu into the diamond lattice is investigated in a combined theoretical-experimental study. The large size of the Eu ion induces a strain on the host lattice, which is minimal for the Eu-vacancy complex. The oxidation state of Eu is calculated to be 3+ for all defect models considered. In contrast, the total charge of the defect-complexes is shown to be negative -1.5 to -2.3 electron. Hybrid-functional electronic-band-structures show the luminescence of the Eu defect to be strongly dependent on the local defect geometry. The 4-coordinated Eu substitutional dopant is the most promising candidate to present the typical Eu3+ luminescence, while the 6-coordinated Eu-vacancy complex is expected not to present any luminescent behaviour. Preliminary experimental results on the treatment of diamond films with Eu-containing precursor indicate the possible incorporation of Eu into diamond films treated by drop-casting. Changes in the PL spectrum, with the main luminescent peak shifting from approximately 614 nm to 611 nm after the growth plasma exposure, and the appearance of a shoulder peak at 625 nm indicate the potential incorporation. Drop-casting treatment with an electronegative polymer material was shown not to be necessary to observe the Eu signature following the plasma exposure, and increased the background luminescence.Comment: 12 pages, 7 figures, 5 table

Direct observation of electron emission from grain boundaries in CVD diamond by PeakForce-controlled tunnelling atomic force microscopy

AbstractA detailed investigation of electron emission from a set of chemical vapour deposited (CVD) diamond films is reported using high-resolution PeakForce-controlled tunnelling atomic force microscopy (PF-TUNA). Electron field emission originates preferentially from the grain boundaries in low-conductivity polycrystalline diamond samples, and not from the top of features or sharp edges. Samples with smaller grains and more grain boundaries, such as nanocrystalline diamond, produce a higher emission current over a more uniform area than diamond samples with larger grain size. Light doping with N, B or P increases the grain conductivity, with the result that the emitting grain-boundary sites become broader as the emission begins to creep up the grain sidewalls. For heavy B doping, where the grains are now more conducting than the grain boundaries, emission comes from both the grain boundaries and the grains almost equally. Lightly P-doped diamond samples show emission from step-edges on the (111) surfaces. Emission intensity was time dependent, with the measured current dropping to ∼10% of its initial value ∼30h after removal from the CVD chamber. This decrease is ascribed to the build-up of adsorbates on the surface along with an increase in the surface conductivity due to surface transfer doping

Laser-Patternable Graphene Field Emitters for Plasma Displays

This paper presents a plasma display device (PDD) based on laser-induced graphene nanoribbons (LIGNs), which were directly fabricated on polyimide sheets. Superior field electron emission (FEE) characteristics, viz. a low turn-on field of 0.44 V/μm and a large field enhancement factor of 4578, were achieved for the LIGNs. Utilizing LIGNs as a cathode in a PDD showed excellent plasma illumination characteristics with a prolonged plasma lifetime stability. Moreover, the LIGN cathodes were directly laser-patternable. Such superior plasma illumination performance of LIGN-based PDDs has the potential to make a significant impact on display technology

Deposition of diamond films on single crystalline silicon carbide substrates

Silicon carbide (SiC) is a wide band gap material that is slowly but steadily asserting itself as a reliable alternative to silicon (Si) for high temperature electronics applications, in particular for the electrical vehicles industry. The passivation of SiC devices with diamond films is expected to decrease leakage currents and avoid premature breakdown of the devices, leading to more efficient devices. However, for an efficient passivation the interface between both materials needs to be virtually void free and high quality diamond films are required from the first stages of growth. In order to evaluate the impact of the deposition and seeding parameters in the properties of the deposits, diamond films were deposited on SiC substrates by hot filament chemical vapor deposition (HFCVD). Before the seeding step the substrates were exposed to diamond growth conditions (pre-treatment PT) and seeding was performed with a solution of detonation nanodiamond (DND) particles and with 6–12 and 40–60 μm grit. Diamond films were then grown at different temperatures and with different methane concentrations and the deposits were observed in a scanning electron microscope (SEM); their quality was assessed with Raman spectroscopy.publishe

Improved Field Electron Emission Properties of Phosphorus and Nitrogen Co-Doped Nanocrystalline Diamond Films

Nanocrystalline diamond (NCD) field emitters have attracted significant interest for vacuum microelectronics applications. This work presents an approach to enhance the field electron emission (FEE) properties of NCD films by co-doping phosphorus (P) and nitrogen (N) using microwave plasma-enhanced chemical vapor deposition. While the methane (CH4) and P concentrations are kept constant, the N(2)concentration is varied from 0.2% to 2% and supplemented by H-2. The composition of the gas mixture is tracked in situ by optical emission spectroscopy. Scanning electron microscopy, atomic force microscopy (AFM), transmission electron microscopy, and Raman spectroscopy are used to provide evidence of the changes in crystal morphology, surface roughness, microstructure, and crystalline quality of the different NCD samples. The FEE results display that the 2% N(2)concentration sample had the best FEE properties, viz. the lowest turn-on field value of 14.3 V/mu m and the highest current value of 2.7 mu A at an applied field of 73.0 V/mu m. Conductive AFM studies reveal that the 2% N(2)concentration NCD sample showed more emission sites, both from the diamond grains and the grain boundaries surrounding them. While phosphorus doping increased the electrical conductivity of the diamond grains, the incorporation of N(2)during growth facilitated the formation of nano-graphitic grain boundary phases that provide conducting pathways for the electrons, thereby improving the FEE properties for the 2% N(2)concentrated NCD films

Polycrystalline Diamond Coating on Orthopedic Implants: Realization and Role of Surface Topology and Chemistry in Adsorption of Proteins and Cell Proliferation

Polycrystalline diamond has the potential to improve the osseointegration of orthopedic implants compared to conventional materials such as titanium. However, despite the excellent biocompatibility and superior mechanical properties, the major challenge of using diamond for implants, such as those used for hip arthroplasty, is the limitation of microwave plasma chemical vapor deposition (CVD) techniques to synthesize diamond on complex-shaped objects. Here, for the first time, we demonstrate diamond growth on titanium acetabular shells using the surface wave plasma CVD method. Polycrystalline diamond coatings were synthesized at low temperatures (∼400 °C) on three types of acetabular shells with different surface structures and porosities. We achieved the growth of diamond on highly porous surfaces designed to mimic the structure of the trabecular bone and improve osseointegration. Biocompatibility was investigated on nanocrystalline diamond (NCD) and ultrananocrystalline diamond (UNCD) coatings terminated either with hydrogen or oxygen. To understand the role of diamond surface topology and chemistry in the attachment and proliferation of mammalian cells, we investigated the adsorption of extracellular matrix proteins and monitored the metabolic activity of fibroblasts, osteoblasts, and bone-marrow-derived mesenchymal stem cells (MSCs). The interaction of bovine serum albumin and type I collagen with the diamond surfaces was investigated by confocal fluorescence lifetime imaging microscopy (FLIM). We found that the proliferation of osteogenic cells was better on hydrogen-terminated UNCD than on the oxygen-terminated counterpart. These findings correlated with the behavior of collagen on diamond substrates observed by FLIM. Hydrogen-terminated UNCD provided better adhesion and proliferation of osteogenic cells, compared to titanium, while the growth of fibroblasts was poorest on hydrogen-terminated NCD and MSCs behaved similarly on all tested surfaces. These results open new opportunities for application of diamond coatings on orthopedic implants to further improve bone fixation and osseointegration.publishedVersio