Fabrication and Applications of Metal Nanowire Arrays Electrodeposited in Ordered Porous Templates

WOS: 000363645300006

Combined Optical-Electrical Optimization of Cd1−xZnxTe/Silicon Tandem Solar Cells

Although the fundamental limits have been established for the single junction solar cells, tandem configurations are one of the promising approaches to surpass these limits. One of the candidates for the top cell absorber is CdTe, as the CdTe photovoltaic technology has significant advantages: stability, high performance, and relatively inexpensive. In addition, it is possible to tune the CdTe bandgap by introducing, for example, Zn into the composition, forming Cd1−xZnxTe alloys, which can fulfill the Shockley–Queisser limit design criteria for tandem devices. The interdigitated back contact (IBC) silicon solar cells presented record high efficiencies recently, making them an attractive candidate for the rear cell. In this work, we present a combined optical and electrical optimization of Cd1−xZnxTe/IBC Si tandem configurations. Optical and electrical loss mechanisms are addressed, and individual layers are optimized. Alternative electron transport layers and transparent conductive electrodes are discussed for maximizing the top cell and tandem efficiency

Properties of Arsenic–Doped ZnTe Thin Films as a Back Contact for CdTe Solar Cells

As-doped polycrystalline ZnTe layers grown by metalorganic chemical vapor deposition (MOCVD) have been investigated as a back contact for CdTe solar cells. While undoped ZnTe films were essentially insulating, the doped layers showed significant rise in conductivity with increasing As concentration. High p-type carrier densities up 4.5 × 1018 cm−3 was measured by the Hall-effect in heavily doped ZnTe:As films, displaying electrical properties comparable to epitaxial ZnTe single crystalline thin films in the literature. Device incorporation with as-deposited ZnTe:As yielded lower photovoltaic (PV) performance compared to reference devices, due to losses in the open-circuit potential (VOC) and fill factor (FF) related to reducing p-type doping density (NA) in the absorber layer. Some minor recovery observed in absorber doping following a Cl-free post–ZnTe:As deposition anneal in hydrogen at 420 °C contributed to a slight improvement in VOC and NA, highlighting the significance of back contact activation. A mild CdCl2 activation process on the ZnTe:As back contact layer via a sacrificial CdS cap layer has been assessed to suppress Zn losses, which occur in the case of standard CdCl2 anneal treatments (CHT) via formation of volatile ZnCl2. The CdS sacrificial cap was effective in minimising the Zn loss. Compared to untreated and non-capped, mild CHT processed ZnTe:As back contacted devices, mild CHT with a CdS barrier showed the highest recovery in absorber doping and an ~10 mV gain in VOC, with the best cell efficiency approaching the baseline devices

Nanowire and core-shell-structures on flexible Mo Foil for CdTe solar cell applications

CdTe films, nanowires, film-nanowire combinations and CdS-CdTe core-shell structures have been fabricated in a preliminary survey of growth methods that will generate structures for PV applications. Selectivity between film, nanowire and film plus nanowire growth was achieved by varying the pressure of N2 gas present during Au-catalysed VLS growth of CdTe, on either Mo or Si substrates. Metamorphic growth of CdTe nanowires on sputtered CdTe films, deposited on glass substrates, was demonstrated. Coating of CdTe nanowires with CBD CdS gave conformal coverage whereas coating with MOCVD (Cd,Zn)S yielded highly crystallographic dendritic growth on the wires

Development of arsenic doped Cd(Se,Te) absorbers by MOCVD for thin film solar cells

Recent developments in CdTe solar cell technology have included the incorporation of ternary alloy Cd(Se,Te) in the devices. CdTe absorber band gap grading due to Se alloying contributes to current density enhancement and can result in device performance improvement. Here we report Cd(Se,Te) polycrystalline thin films grown by a chamberless inline atmospheric pressure metal organic chemical vapour deposition technique, with subsequent incorporation in CdTe solar cells. The compositional dependence of the crystal structure and optical properties of Cd(Se,Te) are examined. Selenium graded Cd(Se,Te)/CdTe absorber structure in devices are demonstrated using either a single CdSe layer or CdSe/Cd(Se,Te) bilayer (with or without As doping in the Cd(Se,Te) layer). Cross-sectional TEM/EDS, photoluminescence spectra and secondary ion mass spectroscopy analysis confirmed the formation of a graded Se profile toward the back contact with a diffusion length of ~1.5 μm and revealed back-diffusion of Group V (As) dopants from the CdTe layer into Cd(Se,Te) grains. Due to the strong Se/Te interdiffusion, CdSe in the Se bilayer configuration was unable to form an n-type emitter layer in processed devices. In situ As doping of the Cd(Se,Te) layer benefited the device junction quality with current density reaching 28.3 mA/cm2. The results provide useful insights for the optimisation of Cd(Se,Te)/CdTe solar cells

Cadmium Telluride Solar Cells on Ultrathin Glass for Space Applications

This paper details the preliminary findings of a study to achieve a durable thin film CdTe photovoltaic device structure onto ultra-thin space qualified cover glass. An aluminium doped zinc oxide (AZO) transparent conducting oxide (TCO) was deposited directly onto cover glass using metal organic chemical vapour deposition (MOCVD). The AZO demonstrated a low sheet resistance of 10 Ω/□ and high optical transparency of 85% as well as an excellent adherence and environmental stability. Preliminary deposition of the photovoltaic layers onto the AZO on cover glass, by MOCVD, showed the possibility of such a structure yielding a device conversion efficiency of 7.2 %. High series resistance (10 Ω.cm2) and low Voc (586 mV) were identified as the limiting factors when compared to the authors platform process on indium tin oxide (ITO) coated aluminosilicate. The coverage of the Cd1-xZnxS window layer along with the front contacting of the device was shown to be the major cause of the low efficiency. Further deposition of the AZO/CdTe employing an oxygen plasma cleaning step to the cover glass and evaporated gold front contacts significantly improved the device performance. A best conversion efficiency of 10.2 % with series resistance improved to 4.4 Ω.cm2 and open circuit voltage (Voc) up to 667 mV and good adhesion has demonstrated for the first time direct deposition of CdTe solar cells onto 100 μm thick space qualified cover glass

Development of a Wireless Sensor Node for Building Information Management Systems

An increasing number of internet of things (IoT) devices are being deployed long term and therefore need to be self-powered in order to reduce maintenance costs. This paper reports on the design and implementation of a low power wireless sensor node for use in a building information management system powered by an organic solar module. Detailed analysis of the power requirements of the various sensors and the methods used to reduce the power consumption are given. The suitability of organic photovoltaic modules for indoor energy harvesting is examined. Early results from the deployment of these modules are shown

Thin CdTe layers deposited by a chamberless inline process using MOCVD, simulation and experiment

The deposition of thin Cadmium Telluride (CdTe) layers was performed by a chamberless metalorganic chemical vapour deposition process, and trends in growth rates were compared with computational fluid dynamics numerical modelling. Dimethylcadmium and diisopropyltelluride were used as the reactants, released from a recently developed coating head orientated above the glass substrate (of area 15 × 15 cm2). Depositions were performed in static mode and dynamic mode (i.e., over a moving substrate). The deposited CdTe film weights were compared against the calculated theoretical value of the molar supply of the precursors, in order to estimate material utilisation. The numerical simulation gave insight into the effect that the exhaust’s restricted flow orifice configuration had on the deposition uniformity observed in the static experiments. It was shown that > 59% of material utilisation could be achieved under favourable deposition conditions. The activation energy determined from the Arrhenius plot of growth rate was ~ 60 kJ/mol and was in good agreement with previously reported CdTe growth using metalorganic chemical vapour deposition (MOCVD). Process requirements for using a chamberless environment for the inline deposition of compound semiconductor layers were presented

CdCl2 treatment related diffusion phenomena in Cd1xZnxS/CdTe solar cells

Utilisation of wide bandgap Cd1_xZnxS alloys as an alternative to the CdS window layer is an attractive route to enhance the performance of CdTe thin film solar cells. For successful implementation, however, it is vital to control the composition and properties of Cd1_xZnxS through device fabrication processes involving the relatively high-temperature CdTe deposition and CdCl2 activation steps. In this study, cross-sectional scanning transmission electron microscopy and depth profiling methods were employed to investigate chemical and structural changes in CdTe/Cd1_xZnxS/CdS superstrate device structures deposited on an ITO/boro-aluminosilicate substrate. Comparison of three devices in different states of completion—fully processed (CdCl2 activated), annealed only (without CdCl2 activation), and a control (without CdCl2 activation or anneal)—revealed cation diffusion phenomena within the window layer, their effects closely coupled to the CdCl2 treatment. As a result, the initial Cd1_xZnxS/CdS bilayer structure was observed to unify into a single Cd1_xZnxS layer with an increased Cd/Zn atomic ratio; these changes defining the properties and performance of the Cd1_xZnxS/CdTe device