Erratum to: 36th International Symposium on Intensive Care and Emergency Medicine

[This corrects the article DOI: 10.1186/s13054-016-1208-6.]

Role of Grain Size and Recrystallization Texture in the Corrosion Behavior of Pure Iron in Acidic Medium

This work investigates the role of grain size and recrystallization texture in the corrosion behavior of pure iron in 0.1 M sulfuric acid solution. Annealing heat treatment was applied to obtain samples with different average grain sizes (26, 53 and 87 µm). Optical microscopy, X-ray diffraction and electron backscatter diffraction techniques were used to characterize the microstructure. The EBSD data analysis showed ferrite phase with no inclusions and very low geometrically necessary dislocation density, indicating strain-free grains constituting all samples. The crystallographic texture analysis of the samples revealed that the 26 µm grain size sample had a high volume fraction of {111} oriented grains parallel to the sample surface, while other samples exhibited nearly random crystallographic texture. The electrochemical results from potentiodynamic polarization and electrochemical impedance spectroscopy showed a decrease in corrosion resistance from 87 µm to 53 µm grain size sample and then an increase for the 26 µm grain size sample. This increase was attributed to the dominant effect of recrystallization texture on the corrosion behavior of the sample. The cathodic hydrogen evolution reaction kinetics was found to play a decisive role in the corrosion behavior of iron.Team Yaiza Gonzalez GarciaTeam Maria Santofimia NavarroTeam Jilt Sietsm

Characterization, Modeling and Test of Synthetic Anti-Ferromagnet Flip Defect in STT-MRAMs

Understanding the manufacturing defects in magnetic tunnel junctions (MTJs), which are the data-storing elements in STT-MRAMs, and their resultant faulty behaviors are crucial for developing high-quality test solutions. This paper introduces a new type of MTJ defect: synthetic anti-ferromagnet flip (SAFF) defect, wherein the magnetization in both the hard layer and reference layer of MTJ devices undergoes an unintended flip to the opposite direction. Both magnetic and electrical measurement data of SAFF defect in fabricated MTJ devices is presented; it shows that such a defect reverses the polarity of stray field at the free layer of MTJ, while it has no electrical impact on the single isolated device. The paper also demonstrates that using the conventional fault modeling and test approach fails to appropriately model and test such a defect. Therefore device-Aware fault modeling and test approach is used. It first physically models the defect and incorporate it into a Verilog-A MTJ compact model, which is afterwards calibrated with silicon data. The model is thereafter used for fault analysis and modeling within an STT-MRAM array; simulation results show that a SAFF defect may lead to an intermittent Passive Neighborhood Pattern Sensitive Fault (PNPSF1i) when all neighboring cells are in logic '1' state. Finally, test solutions for such fault are discussed.Computer EngineeringQuantum & Computer Engineerin

Characterization, Modeling, and Test of Intermediate State Defects in STT-MRAMs

The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus, understanding the defects in MTJs and their faulty behaviors are paramount for developing high-quality test solutions. This article applies the advanced device-aware test to intermediate (IM) state defects in MTJ devices based on silicon measurements and circuit simulations. An IM state manifests itself as an abnormal third resistive state, which differs from the two bi-stable states of MTJ. We performed silicon measurements on MTJ devices with diameter ranging from 60nm to 120nm; the results show that the occurrence probability of IM state strongly depends on the switching direction, device size, and bias voltage. We demonstrate that the conventional resistor-based fault modeling and test approach fails to appropriately model and test such a defect. Therefore, device-aware test is applied. We first physically model the defect and incorporate it into a Verilog-A MTJ compact model and calibrate it with silicon data. Thereafter, this model is used for a systematic fault analysis based on circuit simulations to obtain accurate and realistic faults in a pre-defined fault space. Our simulation results show that an IM state defect leads to intermittent write transition faults. Finally, we propose and implement a device-aware test solution to detect the IM state defect.Computer EngineeringQuantum & Computer Engineerin

Characterization and Fault Modeling of Intermediate State Defects in STT-MRAM

Understanding the defects in magnetic tunnel junctions (MTJs) and their faulty behaviors are paramount for developing high-quality tests for STT-MRAM. This paper characterizes and models intermediate (IM) state defects in MTJs; IM state manifests itself as an abnormal third resistive state, apart from the two bi-stable states of MTJ. We performed silicon measurements on MTJ devices with diameter ranging from 60 nm to 120 nm; the results reveal that the occurrence probability of IM state strongly depends on the switching direction, device size, and applied bias voltage. To test such defect, appropriate fault models are needed. Therefore, we use the advanced device-aware modeling approach, where we first physically model the defect and incorporate it into a Verilog-A MTJ compact model and calibrate it with silicon data. Thereafter, we use a systematic fault analysis to accurately validate a theoretically predefined fault space and derive realistic fault models. Our simulation results show that the IM state defect causes intermittent write transition faults. This paper also demonstrates that the conventional resistor-based fault modeling and test approach fails in appropriately modeling IM defects, and hence incapable of detecting such defects.Computer EngineeringQuantum & Computer Engineerin

MFA-MTJ Model: Magnetic-Field-Aware Compact Model of pMTJ for Robust STT-MRAM Design

The popularity of perpendicular magnetic tunnel junction (pMTJ)-based spin-transfer torque magnetic random access memories (STT-MRAMs) is growing very fast. The performance of such memories is very sensitive to magnetic fields, including both internal and external ones. This article presents a magnetic-field-aware compact model of pMTJ, named the MFA-magnetic tunnel junction (MTJ) model, for magnetic/electrical co-simulation of MTJ/CMOS circuits. Magnetic measurement data of MTJ devices, with diameters ranging from 35 to 175 nm, are used to calibrate an in-house magnetic coupling model. This model is subsequently integrated into our developed compact pMTJ model, which is implemented in Verilog-A. The superiority of the proposed MFA-MTJ model for device/circuit co-design of STT-MRAM is demonstrated by simulating a single pMTJ as well as STT-MRAM full circuits. The design space is explored under PVT variations and various configurations of magnetic fields.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Computer EngineeringQuantum & Computer Engineerin

Device-Aware Test for Back-Hopping Defects in STT-MRAMs

The development of Spin-transfer torque magnetic RAM (STT-MRAM) mass production requires high-quality dedicated test solutions, for which understanding and modeling of manufacturing defects of the magnetic tunnel junction (MTJ) is crucial. This paper introduces and characterizes a new defect called Back-Hopping (BH); it also provides its fault models and test solutions. The BH defect causes MTJ state to oscillate during write operations, leading to write failures. The characterization of the defect is carried out based on manufactured MTJ devices. Due to the observed non-linear characteristics, the BH defect cannot be modelled with a linear resistance. Hence, device-aware defect modeling is applied by considering the intrinsic physical mechanisms; the model is then calibrated based on measurement data. Thereafter, the fault modeling and analysis is performed based on circuit-level simulations; new fault primitives/models are derived. These accurately describe the way the STT-MRAM behaves in the presence of BH defect. Finally, dedicated march test and a Design-for-Test solutions are proposed.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.Computer EngineeringQuantum & Computer Engineerin

Defect and Fault Modeling Framework for STT-MRAM Testing

STT-MRAM mass production is around the corner as major foundries worldwide invest heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet cost-efficient test solutions are of great importance. This article presents a systematic device-aware defect and fault modeling framework for STT-MRAM to derive accurate fault models which reflect the physical defects appropriately, and thereafter optimal and high-quality test solutions. An overview and classification of manufacturing defects in STT-MRAMs are provided with an emphasis on those related to the fabrication of magnetic tunnel junction (MTJ) devices, i.e., the data-storing elements. Defects in MTJ devices need to be modeled by adjusting the affected technology parameters and subsequent electrical parameters to fully capture the defect impact on both the device's electrical and magnetic properties, whereas defects in interconnects can be modeled as linear resistors. In addition, a complete single-cell fault space and nomenclature are defined, and a systematic fault analysis methodology is proposed. To demonstrate the use of the proposed framework, resistive defects in interconnect and pinhole defects in MTJ devices are analyzed for a single 1T-1MTJ memory cell. Test solutions for detecting these defects are also discussed.Computer EngineeringQuantum & Computer Engineerin

Search for anomaly-mediated supersymmetry breaking with the ATLAS detector based on a disappearing-track signature in pp collisions at sqrt(s) = 7TeV$

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Esposito;F. Etienne;A. I. Etienvre;E. Etzion;D. Evangelakou;H. Evans;L. Fabbri;C. Fabre;R. M. Fakhrutdinov;S. Falciano;Y. Fang;M. Fanti;A. Farbin;A. Farilla;J. Farley;T. Farooque;S. M. Farrington;P. Farthouat;P. Fassnacht;D. Fassouliotis;B. Fatholahzadeh;A. Favareto;L. Fayard;S. Fazio;R. Febbraro;P. Federic;O. L. Fedin;W. Fedorko;M. Fehling-Kaschek;L. Feligioni;D. Fellmann;C. Feng;E. J. Feng;A. B. Fenyuk;J. Ferencei;J. Ferland;W. Fernando;S. Ferrag;J. Ferrando;V. Ferrara;A. Ferrari;P. Ferrari;R. Ferrari;A. Ferrer;M. L. Ferrer;D. Ferrere;C. Ferretti;A. Ferretto Parodi;M. Fiascaris;F. Fiedler;A. Filipčič;A. Filippas;F. Filthaut;M. Fincke-Keeler;M. C. N. Fiolhais;L. Fiorini;A. Firan;G. Fischer;P. Fischer;M. J. Fisher;M. Flechl;I. Fleck;J. Fleckner;P. Fleischmann;S. Fleischmann;T. Flick;L. R. Flores Castillo;M. J. Flowerdew;M. Fokitis;T. Fonseca Martin;J. Fopma;D. A. Forbush;A. Formica;A. Forti;D. Fortin;J. M. Foster;D. Fournier;A. Foussat;A. J. Fowler;K. Fowler;H. Fox;P. Francavilla;S. Franchino;D. Francis;T. Frank;M. Franklin;S. Franz;M. Fraternali;S. Fratina;S. T. French;F. Friedrich;R. Froeschl;D. Froidevaux;J. A. Frost;C. Fukunaga;E. Fullana Torregrosa;J. Fuster;C. Gabaldon;O. Gabizon;T. Gadfort;S. Gadomski;G. Gagliardi;P. Gagnon;C. Galea;E. J. Gallas;V. Gallo;B. J. Gallop;P. Gallus;K. K. Gan;Y. S. Gao;V. A. Gapienko;A. Gaponenko;F. Garberson;M. Garcia-Sciveres;C. García;J. E. García Navarro;R. W. Gardner;N. Garelli;H. Garitaonandia;V. Garonne;J. Garvey;C. Gatti;G. Gaudio;O. Gaumer;B. Gaur;L. Gauthier;I. L. Gavrilenko;C. Gay;G. Gaycken;J-C. Gayde;E. N. Gazis;P. Ge;C. N. P. Gee;D. A. A. Geerts;Ch. Geich-Gimbel;K. Gellerstedt;C. Gemme;A. Gemmell;M. H. Genest;S. Gentile;M. George;S. George;P. Gerlach;A. Gershon;C. Geweniger;H. Ghazlane;N. Ghodbane;B. Giacobbe;S. Giagu;V. Giakoumopoulou;V. Giangiobbe;F. Gianotti;B. Gibbard;A. Gibson;S. M. Gibson;L. M. Gilbert;V. Gilewsky;D. Gillberg;A. R. Gillman;D. M. Gingrich;J. Ginzburg;N. Giokaris;M. P. Giordani;R. Giordano;F. M. Giorgi;P. Giovannini;P. F. Giraud;D. Giugni;M. Giunta;P. Giusti;B. K. Gjelsten;L. K. Gladilin;C. Glasman;J. Glatzer;A. Glazov;K. W. Glitza;G. L. Glonti;J. Godfrey;J. Godlewski;M. Goebel;T. Göpfert;C. Goeringer;C. Gössling;T. Göttfert;S. Goldfarb;T. Golling;S. N. Golovnia;A. Gomes;L. S. Gomez Fajardo;R. Gonçalo;J. Goncalves Pinto Firmino Da Costa;L. Gonella;A. Gonidec;S. Gonzalez;S. González de la Hoz;G. Gonzalez Parra;M. L. Gonzalez Silva;S. Gonzalez-Sevilla;J. J. Goodson;L. Goossens;P. A. Gorbounov;H. A. Gordon;I. Gorelov;G. Gorfine;B. Gorini;E. Gorini;A. Gorišek;E. Gornicki;S. A. Gorokhov;V. N. Goryachev;B. Gosdzik;M. Gosselink;M. I. Gostkin;I. Gough Eschrich;M. Gouighri;D. Goujdami;M. P. Goulette;A. G. Goussiou;C. Goy;S. Gozpinar;I. Grabowska-Bold;P. Grafström;K-J. Grahn;F. Grancagnolo;S. Grancagnolo;V. Grassi;V. Gratchev;N. Grau;H. M. Gray;J. A. Gray;E. Graziani;O. G. Grebenyuk;T. Greenshaw;Z. D. Greenwood;K. Gregersen;I. M. Gregor;P. Grenier;J. Griffiths;N. Grigalashvili;A. A. Grillo;S. Grinstein;Y. V. Grishkevich;J.-F. Grivaz;M. Groh;E. Gross;J. Grosse-Knetter;J. Groth-Jensen;K. Grybel;V. J. Guarino;D. Guest;C. Guicheney;A. Guida;S. Guindon;H. Guler;J. Gunther;B. Guo;J. Guo;A. Gupta;Y. Gusakov;V. N. Gushchin;A. Gutierrez;P. Gutierrez;N. Guttman;O. Gutzwiller;C. Guyot;C. Gwenlan;C. B. Gwilliam;A. Haas;S. Haas;C. Haber;H. K. Hadavand;D. R. Hadley;P. Haefner;F. Hahn;S. Haider;Z. Hajduk;H. Hakobyan;D. Hall;J. Haller;K. Hamacher;P. Hamal;M. Hamer;A. Hamilton;S. Hamilton;H. Han;L. Han;K. Hanagaki;K. Hanawa;M. Hance;C. Handel;P. Hanke;J. R. Hansen;J. B. Hansen;J. D. Hansen;P. H. Hansen;P. Hansson;K. Hara;G. A. Hare;T. Harenberg;S. Harkusha;D. Harper;R. D. Harrington;O. M. Harris;K. Harrison;J. Hartert;F. Hartjes;T. Haruyama;A. Harvey;S. Hasegawa;Y. Hasegawa;S. Hassani;M. Hatch;D. Hauff;S. Haug;M. Hauschild;R. Hauser;M. Havranek;B. M. Hawes;C. M. Hawkes;R. J. Hawkings;D. Hawkins;T. Hayakawa;T. Hayashi;D. Hayden;H. S. Hayward;S. J. Haywood;E. Hazen;M. He;S. J. Head;V. Hedberg;L. Heelan;S. Heim;B. Heinemann;S. Heisterkamp;L. Helary;C. Heller;M. Heller;S. Hellman;D. Hellmich;C. Helsens;R. C. W. Henderson;M. Henke;A. Henrichs;A. M. Henriques Correia;S. Henrot-Versille;F. Henry-Couannier;C. Hensel;T. Henß;C. M. Hernandez;Y. Hernández Jiménez;R. Herrberg;A. D. Hershenhorn;G. Herten;R. Hertenberger;L. Hervas;N. P. Hessey;E. Higón-Rodriguez;D. Hill;J. C. Hill;N. Hill;K. H. Hiller;S. Hillert;S. J. Hillier;I. Hinchliffe;E. Hines;M. Hirose;F. Hirsch;D. Hirschbuehl;J. Hobbs;N. Hod;M. C. Hodgkinson;P. Hodgson;A. Hoecker;M. R. Hoeferkamp;J. Hoffman;D. Hoffmann;M. Hohlfeld;M. Holder;S. O. Holmgren;T. Holy;J. L. Holzbauer;Y. Homma;T. M. Hong;L. Hooft van Huysduynen;T. Horazdovsky;C. Horn;S. Horner;J-Y. Hostachy;S. Hou;M. A. Houlden;A. Hoummada;J. Howarth;D. F. Howell;I. Hristova;J. Hrivnac;I. Hruska;T. Hryn’ova;P. J. Hsu;S.-C. Hsu;G. S. Huang;Z. Hubacek;F. Hubaut;F. Huegging;T. B. Huffman;E. W. Hughes;G. Hughes;R. E. Hughes-Jones;M. Huhtinen;P. Hurst;M. Hurwitz;U. Husemann;N. Huseynov;J. Huston;J. Huth;G. Iacobucci;G. Iakovidis;M. Ibbotson;I. Ibragimov;R. Ichimiya;L. Iconomidou-Fayard;J. Idarraga;P. Iengo;O. Igonkina;Y. Ikegami;M. Ikeno;Y. Ilchenko;D. Iliadis;N. Ilic;D. Imbault;M. Imori;T. Ince;J. Inigo-Golfin;P. Ioannou;M. Iodice;A. Irles Quiles;C. Isaksson;A. Ishikawa;M. Ishino;R. Ishmukhametov;C. Issever;S. Istin;A. V. Ivashin;W. Iwanski;H. Iwasaki;J. M. Izen;V. Izzo;B. Jackson;J. N. Jackson;P. Jackson;M. R. Jaekel;V. Jain;K. Jakobs;S. Jakobsen;J. Jakubek;D. K. Jana;E. Jankowski;E. Jansen;H. Jansen;A. Jantsch;M. Janus;G. Jarlskog;L. Jeanty;K. Jelen;I. Jen-La Plante;P. Jenni;A. Jeremie;P. Jež;S. Jézéquel;M. K. Jha;H. Ji;W. Ji;J. Jia;Y. Jiang;M. Jimenez Belenguer;G. Jin;S. Jin;O. Jinnouchi;M. D. Joergensen;D. Joffe;L. G. Johansen;M. Johansen;K. E. Johansson;P. Johansson;S. Johnert;K. A. Johns;K. Jon-And;G. Jones;R. W. L. Jones;T. W. Jones;T. J. Jones;O. Jonsson;C. Joram;P. M. Jorge;J. Joseph;T. Jovin;X. Ju;C. A. Jung;V. Juranek;P. Jussel;A. Juste Rozas;V. V. Kabachenko;S. Kabana;M. Kaci;A. Kaczmarska;P. Kadlecik;M. Kado;H. Kagan;M. Kagan;S. Kaiser;E. Kajomovitz;S. Kalinin;L. V. Kalinovskaya;S. Kama;N. Kanaya;M. Kaneda;T. Kanno;V. A. Kantserov;J. Kanzaki;B. Kaplan;A. Kapliy;J. Kaplon;D. Kar;M. Karagounis;M. Karagoz;M. Karnevskiy;K. Karr;V. Kartvelishvili;A. N. Karyukhin;L. Kashif;G. Kasieczka;R. D. Kass;A. Kastanas;M. Kataoka;Y. Kataoka;E. Katsoufis;J. Katzy;V. Kaushik;K. Kawagoe;T. Kawamoto;G. Kawamura;M. S. Kayl;V. A. Kazanin;M. Y. Kazarinov;J. R. Keates;R. Keeler;R. Kehoe;M. Keil;G. D. Kekelidze;J. Kennedy;C. J. Kenney;M. Kenyon;O. Kepka;N. Kerschen;B. P. Kerševan;S. Kersten;K. Kessoku;J. Keung;F. Khalil-zada;H. Khandanyan;A. Khanov;D. Kharchenko;A. Khodinov;A. G. Kholodenko;A. Khomich;T. J. Khoo;G. Khoriauli;A. Khoroshilov;N. Khovanskiy;V. Khovanskiy;E. Khramov;J. Khubua;H. Kim;M. S. Kim;P. C. Kim;S. H. Kim;N. Kimura;O. Kind;B. T. King;M. King;R. S. B. King;J. Kirk;L. E. Kirsch;A. E. Kiryunin;T. Kishimoto;D. Kisielewska;T. Kittelmann;A. M. Kiver;E. Kladiva;J. Klaiber-Lodewigs;M. Klein;U. Klein;K. Kleinknecht;M. Klemetti;A. Klier;A. Klimentov;R. Klingenberg;E. B. Klinkby;T. Klioutchnikova;P. F. Klok;S. Klous;E.-E. Kluge;T. Kluge;P. Kluit;S. Kluth;N. S. Knecht;E. Kneringer;J. Knobloch;E. B. F. G. Knoops;A. Knue;B. R. Ko;T. Kobayashi;M. Kobel;M. Kocian;P. Kodys;K. Köneke;A. C. König;S. Koenig;L. Köpke;F. Koetsveld;P. Koevesarki;T. Koffas;E. Koffeman;F. Kohn;Z. Kohout;T. Kohriki;T. Koi;T. Kokott;G. M. Kolachev;H. Kolanoski;V. Kolesnikov;I. Koletsou;J. Koll;D. Kollar;M. Kollefrath;S. D. Kolya;A. A. Komar;Y. Komori;T. Kondo;T. Kono;A. I. Kononov;R. Konoplich;N. Konstantinidis;A. Kootz;S. Koperny;S. V. Kopikov;K. Korcyl;K. Kordas;V. Koreshev;A. Korn;A. Korol;I. Korolkov;E. V. Korolkova;V. A. Korotkov;O. Kortner;S. Kortner;V. V. Kostyukhin;M. J. Kotamäki;S. Kotov;V. M. Kotov;A. Kotwal;C. Kourkoumelis;V. Kouskoura;A. Koutsman;R. Kowalewski;T. Z. Kowalski;W. Kozanecki;A. S. Kozhin;V. Kral;V. A. Kramarenko;G. Kramberger;M. W. Krasny;A. Krasznahorkay;J. Kraus;J. K. Kraus;A. Kreisel;F. Krejci;J. Kretzschmar;N. Krieger;P. Krieger;K. Kroeninger;H. Kroha;J. Kroll;J. Kroseberg;J. Krstic;U. Kruchonak;H. Krüger;T. Kruker;N. Krumnack;Z. V. Krumshteyn;A. Kruth;T. Kubota;S. Kuehn;A. Kugel;T. Kuhl;D. Kuhn;V. Kukhtin;Y. Kulchitsky;S. Kuleshov;C. Kummer;M. Kuna;N. Kundu;J. Kunkle;A. Kupco;H. Kurashige;M. Kurata;Y. A. Kurochkin;V. Kus;M. Kuze;J. Kvita;R. Kwee;A. Rosa;L. Rotonda;L. Labarga;J. Labbe;S. Lablak;C. Lacasta;F. Lacava;H. Lacker;D. Lacour;V. R. Lacuesta;E. Ladygin;R. Lafaye;B. Laforge;T. Lagouri;S. Lai;E. Laisne;M. Lamanna;C. L. Lampen;W. Lampl;E. Lancon;U. Landgraf;M. P. J. Landon;H. Landsman;J. L. Lane;C. Lange;A. J. Lankford;F. Lanni;K. Lantzsch;S. Laplace;C. Lapoire;J. F. Laporte;T. Lari;A. V. Larionov;A. Larner;C. Lasseur;M. Lassnig;P. Laurelli;W. Lavrijsen;P. Laycock;A. B. Lazarev;O. Dortz;E. Guirriec;C. Maner;E. Menedeu;C. Lebel;T. LeCompte;F. Ledroit-Guillon;H. Lee;J. S. H. Lee;S. C. Lee;L. Lee;M. Lefebvre;M. Legendre;A. Leger;B. C. LeGeyt;F. Legger;C. Leggett;M. Lehmacher;G. Lehmann Miotto;X. Lei;M. A. L. Leite;R. Leitner;D. Lellouch;M. Leltchouk;B. Lemmer;V. Lendermann;K. J. C. Leney;T. Lenz;G. Lenzen;B. Lenzi;K. Leonhardt;S. Leontsinis;C. Leroy;J-R. Lessard;J. Lesser;C. G. Lester;A. Leung Fook Cheong;J. Levêque;D. Levin;L. J. Levinson;M. S. Levitski;A. Lewis;G. H. Lewis;A. M. Leyko;M. Leyton;B. Li;H. Li;S. Li;X. Li;Z. Liang;H. Liao;B. Liberti;P. Lichard;M. Lichtnecker;K. Lie;W. Liebig;R. Lifshitz;C. Limbach;A. Limosani;M. Limper;S. C. Lin;F. Linde;J. T. Linnemann;E. Lipeles;L. Lipinsky;A. Lipniacka;T. M. Liss;D. Lissauer;A. Lister;A. M. Litke;C. Liu;D. Liu;H. Liu;J. B. Liu;M. Liu;S. Liu;Y. Liu;M. Livan;S. S. A. Livermore;A. Lleres;J. Llorente Merino;S. L. Lloyd;E. Lobodzinska;P. Loch;W. S. Lockman;T. Loddenkoetter;F. K. Loebinger;A. Loginov;C. W. Loh;T. Lohse;K. Lohwasser;M. Lokajicek;J. Loken;V. P. Lombardo;R. E. Long;L. Lopes;D. Lopez Mateos;J. Lorenz;M. Losada;P. Loscutoff;F. Lo Sterzo;M. J. Losty;X. Lou;A. Lounis;K. F. Loureiro;J. Love;P. A. Love;A. J. Lowe;F. Lu;H. J. Lubatti;C. Luci;A. Lucotte;A. Ludwig;D. Ludwig;I. Ludwig;J. Ludwig;F. Luehring;G. Luijckx;D. Lumb;L. Luminari;E. Lund;B. Lund-Jensen;B. Lundberg;J. Lundberg;J. Lundquist;M. Lungwitz;G. Lutz;D. Lynn;J. Lys;E. Lytken;H. Ma;L. L. Ma;J. A. Macana Goia;G. Maccarrone;A. Macchiolo;B. Maček;J. Machado Miguens;R. Mackeprang;R. J. Madaras;W. F. Mader;R. Maenner;T. Maeno;P. Mättig;S. Mättig;L. Magnoni;E. Magradze;Y. Mahalalel;K. Mahboubi;G. Mahout;C. Maiani;C. Maidantchik;A. Maio;S. Majewski;Y. Makida;N. Makovec;P. Mal;Pa. Malecki;P. Malecki;V. P. Maleev;F. Malek;U. Mallik;D. Malon;C. Malone;S. Maltezos;V. Malyshev;S. Malyukov;R. Mameghani;J. Mamuzic;A. Manabe;L. Mandelli;I. Mandić;R. Mandrysch;J. Maneira;P. S. Mangeard;I. D. Manjavidze;A. Mann;P. M. Manning;A. Manousakis-Katsikakis;B. Mansoulie;A. Manz;A. Mapelli;L. Mapelli;L. March;J. F. Marchand;F. Marchese;G. Marchiori;M. Marcisovsky;A. Marin;C. P. Marino;F. Marroquim;R. Marshall;Z. Marshall;F. K. Martens;S. Marti-Garcia;A. J. Martin;B. Martin;B. Martin;F. F. Martin;J. P. Martin;Ph. Martin;T. A. Martin;V. J. Martin;B. Ma